C19 TRANSISTOR Search Results

102k 50v capacitor

Abstract: dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3
Contextual Info: Qty RefDes Part Number Value Description 5 C10, C23, C25, C29, C30 GRM39X7R103K025A 0.01uF Capacitor, Ceramic, 0.01uF, 25V, X7R, 10% muRata 2 C9, C32 GRM39X7R223K025A 1 2 1 2 1 2 2 1 C46 C27, C35 C12, C15, C24, C43 C13 C19 C14, C36 C16 C42, C44 C39, C45 C18

470uF 50V capacitor

Abstract: nichicon aluminum capacitor 2n2222a SOT23 105k x7r 50 240-333 Nichicon Capacitor of capacitor 470uf 16v nichicon 470uF capacitor 10 uF x 25v JST SOT-23
Contextual Info: REV. A Count RefDes 3 C63 C19 C34 1 C14 1 C46 4 C12 C27 C41 C52 6 C25 C39 C1 C15 C30 C44 1 C51 4 C13 C28 C42 C10 1 C5 3 C29 C43 C54 3 C4 C18 C33 3 C3 C17 C32 1 C11 2 C26 C40 2 C45 C53 PMP405 Part Number Std Std Std Std Std Std Std Std Std Std Std Std Std Std

smd transistor 2a

Abstract: CAPACITOR 47UF 25V ELECTROLYTIC capacitor 100uF 63V smd diode d9 SMD ZENER DIODE j1 SMD electrolytic capacitor 100uF 63V diode zener c19 resistor 15k smd transistor 123 Diode zener smd d8
Contextual Info: STMicroelectronics: STEVAL-TSP001V1 Power Over Ethernet Board QTY 1 1 2 1 1 3 1 2 1 3 1 1 1 1 1 1 1 1 2 2 1 1 1 1 1 1 3 4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Reference C1 C10 C11, C12 C15 C18 C2, C3, C4 C7 C8, C19 C9 D1, D2, D4 D10 D3 D5 D6 D7 D8 D9 ISO1 J1, J2

GRM188R60J106ME47

Abstract: 37Z6 FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

FR408

Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

ma01 transistor

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

GRM188R71H104KA93

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

FR408

Abstract: 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 0, 10/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

2100 WCDMA repeater circuit

Abstract: FR408 z137
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

smd transistor 581

Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

C35 zener

Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

MRFE6VP61

Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC100B102JT50XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

Fair-Rite bead

Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

ATC200B103KT50XT

Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in