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    onsemi MC14043BDG

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    Nichicon Corporation PHC1404330KJ

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    onsemi MC14043BD

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    onsemi MC14043BCPG

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    onsemi MC14043BDR2

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    C14043 Datasheets Context Search

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    RX64

    Abstract: MDP36 lr33300 BDLR4500 BDMR4011 LR4500 R4000 sca24 MDP21 MDP18
    Text: MiniRISC LR4500 Superscalar Microprocessor Technical Manual ® Order Number C14043 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


    Original     		LR4500 C14043 DB14-000066-00, LR4500 Eu3580 RX64 MDP36 lr33300 BDLR4500 BDMR4011 R4000 sca24 MDP21 MDP18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		Si1029X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		Si1035X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1072X 2002/95/EC SC-89 Si1072X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


    Original     		Si1050X 2002/95/EC SC-89 Si1050X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		Si1034X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1073X 2002/95/EC SC-89 Si1073X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21


    Original     		Si1040X 2002/95/EC SC89-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1026X Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.)


    Original     		Si1026X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1023X Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si1023X 2002/95/EC OT-563 SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1023CX Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.756 at VGS = - 4.5 V - 0.35 1.038 at VGS = - 2.5 V - 0.35 1.44 at VGS = - 1.8 V - 0.1 2.4 at VGS = - 1.5 V - 0.05 • Halogen-free According to IEC 61249-2-21


    Original     		Si1023CX 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


    Original     		Si1037X SC-89 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1054X Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY a VDS (V) RDS(on) () ID (A) 0.095 at VGS = 4.5 V 1.32 12 0.104 at VGS = 2.5 V 1.26 0.114 at VGS = 1.8 V 0.88 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1054X 2002/95/EC SC-89 Si1054X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) 0.100 at VGS = -4.5 V -1.44 0.112 at VGS = -3.7 V -1.36 0.140 at VGS = -2.5 V -1.22 Qg (TYP.) • Typical ESD performance 2500 V


    Original     		Si1079X SC-89 Si1079X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1071X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.167 at VGS = - 10 V 0.96 - 30 0.188 at VGS = - 4.5 V 0.90 0.244 at VGS = - 2.5 V 0.79 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1071X 2002/95/EC SC-89 Si1071X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MC140448

    Abstract: MC140438 MC140 14044b MC14044B 14043b MC14 MC14043B MC14XXXBCL MC14XXXBCP
    Text: g C14043B MOTOROLA MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES The M C14043B and M C 14044B quad R -S latche*. w ith MOS P-channel and N-channel enhancement m single monolithic structure. Each latch has an indepc and set and reset inputs. The Q outputs are gatecl


    OCR Scan     		MC14043B MC14044B MC14044B MC140438 MC140431: MC14043B MC140 MC140448 MC140448 MC140438 14044b 14043b MC14 MC14XXXBCL MC14XXXBCP PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    TC4013BP equivalent

    Abstract: D4066BC SCL4160BE SCL4081BE SCL4017BE CF4017BE scl4584be cd4013be equivalent CD4069BE CD4049CN
    Text: Cross-Reference Guide T h is guide provides a quick reference to a wide variety of industry C M O S logic integrated circuits that can be replaced by R C A types. The R C A types listed as replacements are electrically and m echanically equivalent to the corre sp on d ing industry types and can be used as direct replacements in m ost


    OCR Scan     		CD4000CN CD4000M CD4014BE CD4015BE CD4016BE CD4017BE CD4018BE CD4019BE CD4020BE CD4021BE TC4013BP equivalent D4066BC SCL4160BE SCL4081BE SCL4017BE CF4017BE scl4584be cd4013be equivalent CD4069BE CD4049CN PDF

    MC140438

    Abstract: MC140446 14043b C1404 MC14044B MC14043 MC14043B MC14XXXBCL MC14XXXBCP MC14XXXBD
    Text: MC 14043 B M O T O R O L A MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES The C14043B and MC14G44B quad R-S latches are constructed with MOS P-channel and N-channei enhancement mode devices in a single monolithic structure. Each latch has an independent Q output


    OCR Scan     		MC140438 MC14Q44B MC140438 MC14044S C14043B* MC14044B MC14043B MC140446 MC14043B MC140446 14043b C1404 MC14043 MC14XXXBCL MC14XXXBCP MC14XXXBD PDF

    IMC14043B

    Abstract: No abstract text available
    Text: MOTOROLA SC - C L O G I O "ifl L 3 t,7 5 SH QOTTSMO 0 L; 6367252 MOTOROLA SC LOGIC 980 79540 O T - ¥ é - 0 ? - / S C14043B M O T O R O QUAD "NOR" R-S LATCH L A MC14044B QUAD "NAND" R-S LATCH CMOS MSI QUAD R-S LATCHES The C14043B and MC14044B quad R-S latches are constructed


    OCR Scan     		MC14043B MC14044B MC14043B MC14044B IMC14043B PDF

    MC140438

    Abstract: 14044B
    Text: C14043B MOTOROLA MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES Th e M C 1 4 0 4 3 B and M C 1 4 0 4 4 B quad R-S latches are constructed w ith M O S P-channel and N-channel enhancem ent mode devices in a single m onolithic structure. Each latch has an independent Q o utput


    OCR Scan     		MC14043B MC14044B 14043B MC140438 14044B PDF