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    C12E Price and Stock

    Vishay Semiconductors BZT52C12-E3-08

    DIODE ZENER 12V 410MW SOD123
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    DigiKey BZT52C12-E3-08 Cut Tape 28,935 1
    • 1 $0.15
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    BZT52C12-E3-08 Digi-Reel 28,935 1
    • 1 $0.15
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    • 1000 $0.047
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    BZT52C12-E3-08 Reel 27,990 3,000
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    New Advantage Corporation BZT52C12-E3-08 24,000 1
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    • 10000 $0.03
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    Vishay Semiconductors AZ23C12-E3-08

    DIODE ZENER ARRAY 12V SOT-23-3
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    DigiKey AZ23C12-E3-08 Digi-Reel 17,296 1
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    AZ23C12-E3-08 Cut Tape 17,296 1
    • 1 $0.17
    • 10 $0.117
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    • 1000 $0.054
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    AZ23C12-E3-08 Reel 15,000 3,000
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    Vishay Semiconductors DZ23C12-E3-08

    DIODE ZENER ARRAY 12V SOT-23-3
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    DigiKey DZ23C12-E3-08 Cut Tape 5,648 1
    • 1 $0.17
    • 10 $0.117
    • 100 $0.17
    • 1000 $0.051
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    DZ23C12-E3-08 Digi-Reel 5,648 1
    • 1 $0.17
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    • 1000 $0.051
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    DZ23C12-E3-08 Reel 3,000 3,000
    • 1 -
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    Vishay Semiconductors VS-3C12ET07T-M3

    DIODE SIL CARB 650V 12A TO220AC
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    DigiKey VS-3C12ET07T-M3 Tube 3,048 1
    • 1 $5.19
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    New Advantage Corporation VS-3C12ET07T-M3 750 1
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    Alpine Electronics (Asia) Ltd EC12E24404A6

    INSULATED SHAFT ENCODERS
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    DigiKey EC12E24404A6 Tray 2,254 1
    • 1 $2.36
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    • 100 $1.55838
    • 1000 $1.23103
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    Avnet Americas EC12E24404A6 Tray 16 Weeks 2,400
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    Avnet Abacus EC12E24404A6 29 Weeks 4,800
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    CoreStaff Co Ltd EC12E24404A6 1,540
    • 1 $1.43
    • 10 $1.121
    • 100 $0.588
    • 1000 $0.541
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    Find more C12E price and stock on Findchips.com

    C12E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C12E Matthey Silver Mica Capacitors 1976 Scan PDF
    C12E303_OPB_ARB IBM Arbiter Core, High performance core for highly integrated Core, ASIC systems Original PDF
    C12E318_OPB_PLB_BR IBM Bridge Core, High performance core for highly integrated Core, ASIC systems Original PDF
    C12E319_PLB_OPB_BR IBM Bridge Core, High performance core for highly integrated Core, ASIC systems Original PDF
    C12E320_PLB_32B_8M IBM Arbiter Core, High performance core for highly integrated Core, ASIC systems Original PDF
    C12E321_PLB_64B_8M IBM Arbiter Core, High performance core for highly integrated Core, ASIC systems Original PDF

    C12E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IBM Processor Local Bus PLB 64-Bit Architecture

    Abstract: No abstract text available
    Text: 64-bit PLB to OPB Bridge Core C12E319_PLB_OPB_BR High performance core for highly integrated Core+ASIC systems Highlights The processor local bus PLB to onchip peripheral bus (OPB) bridge is a soft core which enables transfers of data between the PLB and OPB under the


    Original     		64-bit C12E319 SA14-2581-00 IBM Processor Local Bus PLB 64-Bit Architecture PDF

    BdP 285

    Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
    Text: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa


    OCR Scan     		C12es C12ss BFI67, T0220 BF245 BF240-1, BF440-I 05-QJÂ T0126 BFR30R-3IR BdP 285 bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495 PDF

    SA12E

    Abstract: No abstract text available
    Text: 32-bit OPB Arbiter Core C12E303_OPB_ARB High performance core for highly integrated Core+ASIC systems Highlights The on-chip peripheral bus OPB arbiter is an internal core designed for on-chip peripheral bus arbitration. The OPB arbiter is a byte-wide slave


    Original     		32-bit C12E303 SA14-2578-00 SA12E PDF

    a44e

    Abstract: C101E A12E A15E C77E A33E A22E C202E C204E C22E
    Text: I 'E' Finish Resin E ncapsulated I T em perature R ange — 55°C to + 100°C Type Capacitance pF Capacitor Tolerance ±% Il X b X d (max) mm a mm 50 VO LT W O R K IN G C5E C6E C12E A 12E C14E A 15E A 25E C101E C201E C202E C203E C204E A 33E C33E C35E 271


    OCR Scan     		C101E C201E C202E C203E C204E a44e A12E A15E C77E A33E A22E C22E PDF

    CMOS-6SF

    Abstract: No abstract text available
    Text: 64-bit OPB to PLB Bridge Core C12E318_OPB_PLB_BR High performance core for highly integrated Core+ASIC systems Highlights The OPB to PLB bridge is a CMOS-6SF technology soft core which enables transfers of data between the on-chip peripheral bus OPB and the processor


    Original     		64-bit C12E318 CMOS-6SF PDF

    A44E

    Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
    Text: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000


    OCR Scan     		C101E C201E C202E C203E C204E C55H/F C77H/ C55FA C77FA A44E C14F A12E C22F A33E cs5f A15E C12E C14E PDF

    CMOS-6SF

    Abstract: No abstract text available
    Text: 64-bit PLB Arbiter Core C12E321_PLB_64B_8M High performance core for highly integrated Core+ASIC systems Highlights This is the high performance 64-bit version processor local bus arbiter with two cycle arbitration feature. The processor local bus PLB arbiter is


    Original     		64-bit C12E321 64-bit 32-bit SA14-2575-00 CMOS-6SF PDF

    Untitled

    Abstract: No abstract text available
    Text: 32-bit PLB Arbiter Core C12E320_PLB_32B_8M High performance core for highly integrated Core+ASIC systems Highlights This is the 32-bit version processor local bus arbiter with two cycle arbitration. It is a soft core consisting of a bus arbitration control unit, a watchdog


    Original     		32-bit C12E320 SA14-2574-00 PDF

    transistor smd d9d

    Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
    Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to


    Original     		DC2064A LTC3300-1/LTC6803-2 DC2064A LTC6803-2 LTC3300-1 DC2064A. LTC6803â DC590B transistor smd d9d smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A PDF

    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


    OCR Scan     		06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes PDF

    Katalog tesla tranzistor

    Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
    Text: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA


    OCR Scan     		KFY18, KFY34, KFY46 KSY63 KSY82 Katalog tesla tranzistor KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517 PDF

    P55i

    Abstract: HY29F040A P12-I
    Text: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands


    Original     		HY29F040A P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E, R-90E 120ns P55i P12-I PDF

    BF 830 transistor

    Abstract: transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422
    Text: *B F 422 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L Compì, of BF 423 * Preferred device Dispositif recommandé Video amplification A m plificateur Video vcEO Maximum power dissipation Plastic case Dissipation de puissance maximale


    OCR Scan     		CB-76 BF 830 transistor transistor 602 transistor bf 422 NPN CARACTERISTIQUES transistor bf 422 NPN transistor BF 423 emetteur video IW transistor transistor 139 BF transistor npn bf 422 BF 422 PDF

    BFW30

    Abstract: BFW 30
    Text: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers


    OCR Scan     		BFW30 BFW30 BFW 30 PDF

    BFY90

    Abstract: 50w transistor 205MHz transistor 127
    Text: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for


    Original     		BFY90 BFY90 200MHz 202MHz 205MHz 208MHz 300ms 50w transistor 205MHz transistor 127 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED MICRO D E ~ j D 2 5 7 S 25 DEVICES QDnSlI 'f= * & -0 9 - / s ' □ Am4025/5025 • Am4026/5026 • Am4027/5027 2 0 4 8 -Bit Dynamic Shift Registers Advanced Micro Devices Complex MOS Integrated Circuits D istinctive Characteristics • • 6 M H z data rate guaranteed


    OCR Scan     		Am4025/5025 Am4026/5026 Am4027/5027 1024-bit L-STD-883 10-Pin 16-Pin PDF

    schematic diagram crt tv samsung

    Abstract: PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc
    Text: This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams P30 7-1 7 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.


    Original     		CSP32/64 M9/M10 NC7ST32M5_ HSDL-3602 27MHZ XTAL-32KHz XTAL-24 30PPM schematic diagram crt tv samsung PC821 P-12V-S samsung q45 c52ex schematic Samsung TV led PT137 Samsung R590 Samsung R418 samsung kbc PDF

    bzp 650 c10

    Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
    Text: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .


    OCR Scan     		NTCI11 TC212 NTC220 NTC22I NTC220 NTC50I bzp 650 c10 bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24 PDF

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


    OCR Scan     		PDF

    8C710

    Abstract: 7111-C
    Text: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9


    Original     		1234516789ABC82DEFC81E 84AECD ABCDE9759F7 11111111111111111111111111111111111149AB1 436BD9F EC1B717B7 7107CE 14E91EC1E B17F8 E99701 8C710 7111-C PDF

    Untitled

    Abstract: No abstract text available
    Text: HY29F040 Series 512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 90 ns access time • Low Power Consumption - 20 mA typical active read current


    Original     		HY29F040 32-Pin P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E, PDF

    BFY90

    Abstract: transistor Bipolar BFY90 0025a 1ghz npn power BFY90 Data
    Text: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for


    Original     		BFY90 BFY90 200mW BFY90CSM BFY90DCSM BFY90QF transistor Bipolar BFY90 0025a 1ghz npn power BFY90 Data PDF

    Untitled

    Abstract: No abstract text available
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead LTC6802, LTC6803, LTC6804 TA03a LTC3300-1 48-Lead LTC6803 PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 PDF