C1210C104J5RAC Search Results
C1210C104J5RAC Price and Stock
KEMET Corporation C1210C104J5RACTUCAP CER 0.1UF 50V X7R 1210 |
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C1210C104J5RACTU | Cut Tape | 12,154 | 1 |
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C1210C104J5RACTU | Reel | 17 Weeks | 4,000 |
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C1210C104J5RACTU | 3,682 |
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C1210C104J5RACTU | 550 | 191 |
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C1210C104J5RACTU | Cut Strips | 550 | 7 Weeks | 1 |
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C1210C104J5RACTU | Reel | 4,000 |
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C1210C104J5RACTU | 2,928 |
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KEMET Corporation C1210C104J5RAC7210CAP CER 0.1UF 50V X7R 1210 |
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C1210C104J5RAC7210 | Reel | 10,000 |
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C1210C104J5RAC7210 |
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KEMET Corporation C1210C104J5RAC7025CAP CER 0.1UF 50V X7R 1210 |
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C1210C104J5RAC7025 | Reel | 4,000 |
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C1210C104J5RAC7025 | 3,232 |
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C1210C104J5RAC7025 | 2,724 |
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C1210C104J5RAC7025 | Reel | 17 Weeks | 4,000 |
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KEMET Corporation C1210C104J5RACAUTOCAP CER 1210 |
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C1210C104J5RACAUTO | Reel | 4,000 |
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KEMET Corporation C1210C104J5RAC7800Multilayer Ceramic Capacitor, 0.1 uF, 50 V, ? 5%, X7R, 1210 [3225 Metric] - Tape and Reel (Alt: C1210C104J5RAC7800) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C1210C104J5RAC7800 | Reel | 17 Weeks | 4,000 |
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C1210C104J5RAC7800 | 10,263 |
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C1210C104J5RAC7800 | Reel | 8,000 |
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C1210C104J5RAC7800 | 17 Weeks | 4,000 |
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C1210C104J5RAC Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| C1210C104J5RAC |
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Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098" Container: Bulk; Features: Unmarked | Original | |||
| C1210C104J5RAC |
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CERAMIC CHIP CAPACITORS | Original | |||
| C1210C104J5RAC7025 |
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Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Marked | Original | |||
| C1210C104J5RAC7800 |
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Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Unmarked | Original | |||
| C1210C104J5RACTU |
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Ceramic Capacitors, Capacitors, CAP CER 0.1UF 50V 5% X7R 1210 | Original | |||
| C1210C104J5RACTU |
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CAP 0.1UF 50V 5% X7R SMD-1210 TR-7-PL SN-NIBAR | Original |
C1210C104J5RAC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 |
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MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier |
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MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H | |
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Contextual Info: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
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MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 | |
motorola 5118Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
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84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118 | |
100B2R7CP500X
Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
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MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 100B2R7CP500X MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HSR3 | |
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Contextual Info: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
Original |
MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |