q406 transistor
Abstract: MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406
Text: DEMO9S08LC60 Schematic and Bill of Material DC01134 GND C110 22pF BKGD 22pF C109 BDM J104 2 4 6 4 1 3 www.softecmicro.com GND 3V3 PTB1 ENA J103B PTB0 ENA RESET# R101 10M NOT POPULATED 1 3 5 Y101 32,768KHz CRYSTAL 2 J103A XTAL EXTAL 40 41 42 43 44 45 46 47
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DEMO9S08LC60
DC01134
J103B
768KHz
J103A
SD00506
100nF
BP3/FP40
PTC/10K102FTP
RMC1/10K1004FTP
q406 transistor
MAX3232 smd
TRANSISTOR Q406
HC49 MEGATEC
0805B105K250CT
D-Sub 44-pin female Connector
8X2 LCD DISPLAY
transistor C509
MAX3232 pin schematic
q406
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Transistor BC107
Abstract: TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN
Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BC107/A/B/C
BC108/A/B/C
BC109/A/B/C
BC107
BC108
BC109
100mA
300mW
BC107
O-206AA)
Transistor BC107
TRANSISTOR C107
BC10 npn transistor
transistor c109
Transistor BC109
TRANSISTOR bc107 current gain
c107 transistor
applications of Transistor BC108
TRANSISTOR bc108
Transistor BC107 NPN
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TRANSISTOR C107
Abstract: BC10 npn transistor
Text: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BC107/A/B/C
BC108/A/B/C
BC109/A/B/C
BC107
BC108
BC109
100mA
300mW
PROPERTIE612
TRANSISTOR C107
BC10 npn transistor
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Untitled
Abstract: No abstract text available
Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having
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PIC32MX7Â
PIC32MX795F512L
PIC32Â
PIC32
PIC32MX7
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TRANSISTOR D206
Abstract: KA5S-SERIES IC301 Zener C212 IC LM7805 OF BLOCK diagram D203 diode rg4c mosfet 4108 FS6S1265RE FS6S1565RB
Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction FS6S series is a Fairchild Power Switch FPS that is specially designed for off-line SMPS of CRT monitor with minimal external components. This device is a current mode
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TRANSISTOR D206
Abstract: IC301 EER-4445 Zener C212 IC-101 IC101 EER4445 C106 Series BD101 zener c109
Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The
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IC301
Abstract: TRANSISTOR D206 D2046 Zener C212 IC101 Transistor No C110 FS6S1565RB FS6S1265RB d206 diode EER4445
Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The
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TRANSISTOR D206
Abstract: IC301 EER4445 Zener C212 c203 opto coupler 4 pin EER-4445 D2046 opto d206 diode rg4c FS6S1265RE
Text: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The
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TL272
Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty
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PTFB201402FC
PTFB201402FC
H-37248-4
17ubstances.
TL272
tl271
TL274
5228 voltage regulator
TL279
TL246
c221 TRANSISTOR
TL-250
tl2741
HD 1077 O
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capacitor marking c106
Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
capacitor marking c106
NFM18Ps105
TL217
NFM18PS105R0J3
TL222
Transistor tl217
TRANSISTOR SMD w2
c105 TRANSISTOR
c103 TRANSISTOR DATA
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz
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PTFB213004F
PTFB213004F
300-watt
H-37275-6/2
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VdS 2093 2009
Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz
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PTFB213004F
PTFB213004F
300-watt
H-37275-6/2
VdS 2093 2009
TL2014
transistor c114 chip
transistor c114 diagram
TL243
TL145
tl1571
TL1621
transistor c114
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FRD070IF40-A
Abstract: FRD070IF40-A-T C-118
Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for
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STM32F4
STM32F407ZG
STM32F4
STM32,
STM32F4
FRD070IF40-A
FRD070IF40-A-T
C-118
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TL172
Abstract: TL170
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB183404E
PTFB183404F
PTFB183404E
PTFB183404F
340-watt
H-37275-6/2
TL172
TL170
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
c102 TRANSISTOR
c103 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR c105
TRANSISTOR c104
c103 m TRANSISTOR
p 4712
NFM18PS105R0J3
c105 TRANSISTOR
tl113
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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Hitachi DSA00279
Abstract: No abstract text available
Text: HA13605A Three-Phase Brushless Motor Driver ADE-207-201A Z 2nd. Edition February, 1998 Description The HA13605A is a three-phase brushless motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following functions and
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HA13605A
ADE-207-201A
HA13605A
D-85622
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS
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STM32
STM32F407ZG
STM32,
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
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0338c
Abstract: No abstract text available
Text: Jfàilitron Devices. Inc M E D IU M TO HIGH V O L T A G E , HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: 50,000 A Aluminum Collector: Gold Polished silicon ox "Chrome Nickel Silver" also available
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203mm)
O-114
10MHz
10MHz
338C/W
1200pF
0338c
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1200PF
Abstract: Solitron
Text: 8368602 SOI TTRDM nVvTPFS TMH 950 SOLITRON DEVICES INC -Jfatitron_ Devices. Inc. 02900_ TS de D ~T~~~ 3 I-2-t | ô3t.at,na □□ q h ^ g q h |~ ^ EHyKgTT ©ÄTTÄIL©d MEDIUM TO HIGH VOLTAGE, HIGH CU RR EN T CHIP NUMBER PIMP EPITAXIAL PLAIMAR POWER TRANSISTOR
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O-114
10MHz
10MHz
1200pF
Solitron
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Untitled
Abstract: No abstract text available
Text: [^ ©yeTT ©attäl « IDevices. Inc. M ED IUM TO HIGH V O LT A G E, HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available
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938mm
938mm)
508mm)
700mm)
524mm)
203mm)
O-114
10MHz
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