C109 TRANSISTOR Search Results

q406 transistor

Abstract: MAX3232 smd TRANSISTOR Q406 HC49 MEGATEC 0805B105K250CT D-Sub 44-pin female Connector 8X2 LCD DISPLAY transistor C509 MAX3232 pin schematic q406
Contextual Info: DEMO9S08LC60 Schematic and Bill of Material DC01134 GND C110 22pF BKGD 22pF C109 BDM J104 2 4 6 4 1 3 www.softecmicro.com GND 3V3 PTB1 ENA J103B PTB0 ENA RESET# R101 10M NOT POPULATED 1 3 5 Y101 32,768KHz CRYSTAL 2 J103A XTAL EXTAL 40 41 42 43 44 45 46 47

Transistor BC107

Abstract: TRANSISTOR C107 BC10 npn transistor transistor c109 Transistor BC109 TRANSISTOR bc107 current gain c107 transistor applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 NPN
Contextual Info: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

TRANSISTOR C107

Abstract: BC10 npn transistor
Contextual Info: GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C • Hermetic TO-18 Metal package. • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

0338c

Contextual Info: Jfàilitron Devices. Inc M E D IU M TO HIGH V O L T A G E , HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: 50,000 A Aluminum Collector: Gold Polished silicon ox "Chrome Nickel Silver" also available

1200PF

Abstract: Solitron
Contextual Info: 8368602 SOI TTRDM nVvTPFS TMH 950 SOLITRON DEVICES INC -Jfatitron_ Devices. Inc. 02900_ TS de D ~T~~~ 3 I-2-t | ô3t.at,na □□ q h ^ g q h |~ ^ EHyKgTT ©ÄTTÄIL©d MEDIUM TO HIGH VOLTAGE, HIGH CU RR EN T CHIP NUMBER PIMP EPITAXIAL PLAIMAR POWER TRANSISTOR

Contextual Info: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having

TRANSISTOR D206

Abstract: KA5S-SERIES IC301 Zener C212 IC LM7805 OF BLOCK diagram D203 diode rg4c mosfet 4108 FS6S1265RE FS6S1565RB
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction FS6S series is a Fairchild Power Switch FPS that is specially designed for off-line SMPS of CRT monitor with minimal external components. This device is a current mode

TRANSISTOR D206

Abstract: IC301 EER-4445 Zener C212 IC-101 IC101 EER4445 C106 Series BD101 zener c109
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

IC301

Abstract: TRANSISTOR D206 D2046 Zener C212 IC101 Transistor No C110 FS6S1565RB FS6S1265RB d206 diode EER4445
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

TRANSISTOR D206

Abstract: IC301 EER4445 Zener C212 c203 opto coupler 4 pin EER-4445 D2046 opto d206 diode rg4c FS6S1265RE
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

Contextual Info: [^ ©yeTT ©attäl « IDevices. Inc. M ED IUM TO HIGH V O LT A G E, HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

FRD070IF40-A

Abstract: FRD070IF40-A-T C-118
Contextual Info: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for

TL172

Abstract: TL170
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

TL139

Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications

Hitachi DSA00279

Contextual Info: HA13605A Three-Phase Brushless Motor Driver ADE-207-201A Z 2nd. Edition February, 1998 Description The HA13605A is a three-phase brushless motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following functions and

Contextual Info: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to