Untitled
Abstract: No abstract text available
Text: TDI board level camera C10000-201 Time Delay Integration Camera FEATURES 2048 H spatial resolution with 128(V) TDI stages Line rates up to 50 kHz High speed imaging combined with high sensitivity & low noise Great spectral response for UV-NIR with back thinned CCD
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C10000-201
C10000-201
B1201
SCAS0015E15
MAR/2015
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Untitled
Abstract: No abstract text available
Text: TDIボード型カメラ OEM C10000-A01 対応 特 長 装置組み込みに適したボード型カメラ 高解像度・高感度（水平画素数xTDI段数 TAP数 ） ・2048(H)×128(V) (4 TAP) 50 kHzの高速ライン読み出し 背面照射型センサによる高量子効率
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C10000-A01
C10000-A01ã
SCAS0101J02
MAR/2015
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Untitled
Abstract: No abstract text available
Text: TDIボード型カメラ C10000-201 Time Delay Integration Camera 特 長 高解像度・高感度（水平画素数xTDI段数） ・2048 H ×128(V) 背面照射型センサによる高量子効率 紫外~近赤外の幅広い波長域をカバー 50 kHzの高速ライン読み出し
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C10000-201
C10000-201ã
SCAS0015J10
MAR/2015
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11/CANRX/USBDP-datasheet.htmlhttp:/www.datasheetarchive.com/C10000
Abstract: No abstract text available
Text: TDIカメラ C10000-701 Time Delay Integration Camera 特 長 高解像度・高感度（水平画素数xTDI段数 TAP数 ） ・4096(H)×128(V) (16 TAP) 100 kHzの高速ライン読み出し 背面照射型センサによる高量子効率 紫外~近赤外の幅広い波長域をカバー
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C10000-701
C10000-701ã
SCAS0053J09
MAR/2015
11/CANRX/USBDP-datasheet.htmlhttp:/www.datasheetarchive.com/C10000
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Untitled
Abstract: No abstract text available
Text: TDI Camera C10000-401 Time Delay Integration Camera High resolution / high sensitivity Horizontal spatial resolution with 128(V TDI stages) - 2048(H) x 128 (V) , 4 TAP The C10000-401 TDI camera is useful for a wide range of imaging applications requiring high speed operation with high
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C10000-401
C10000-401
SE-164
SCAS0033E09
SEP/2010
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Untitled
Abstract: No abstract text available
Text: TDI camera C10000-801 Time Delay Integration Camera FEATURES High resolution / high sensitivity Horizontal spatial resolution with 128(V TDI stages) - 2048(H) x 128 (V) , 4 TAP The C10000-801 TDI camera is useful for a wide range of imaging applications requiring high speed operation with high
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C10000-801
C10000-801
B1201
SCAS0085E03
MAR/2015
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Untitled
Abstract: No abstract text available
Text: TDIカメラ C10000-801 Time Delay Integration Camera 特 長 高解像度・高感度（水平画素数xTDI段数 TAP数 ） ・2048(H)×128(V) (4 TAP) 50 kHzの高速ライン読み出し 背面照射型センサによる高量子効率 紫外~近赤外の幅広い波長域をカバー
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C10000-801
C10000-801ã
SCAS0085J05
MAR/2015
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Untitled
Abstract: No abstract text available
Text: Board-Level TDI Camera C10000-201 Time Delay Integration Camera HAMAMATSU TDI-CCD Sensor The C10000-201 TDI camera is useful for a wide range of imaging applications requiring high speed operation with high sensitivity simultaneously. TDI is a special image acquisition
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C10000-201
C10000-201
SE-164
SCAS0015E13
FEB/2011
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11/CANRX/USBDP-datasheet.htmlhttp:/www.datasheetarchive.com/C10000
Abstract: No abstract text available
Text: TDI Camera C10000-701 Time Delay Integration Camera High resolution / high sensitivity Horizontal spatial resolution with 128(V TDI stages) - 4096(H) x 128 (V) , 16 TAP Line rate up to 100 kHz High speed imaging combined with high sensitivity and low noise
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C10000-701
C10000-701B)
C10000-701
SE-164
SCAS0053E07
SEP/2010
11/CANRX/USBDP-datasheet.htmlhttp:/www.datasheetarchive.com/C10000
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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transistor 1BW 57
Abstract: BI 344 TRANSISTOR SSD 650 series
Text: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving
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S10200-02,
S10201-04,
S10202-08,
S10202-16
SE-171
KMPD1098E03
transistor 1BW 57
BI 344 TRANSISTOR
SSD 650 series
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Untitled
Abstract: No abstract text available
Text: PE5-Series Specifications 5.00L x 3.20W x 1.20H mm PDI Model PE5-Series provides precision timing in a hermetically sealed package. These high performance clock oscillators offer very low integrated phase jitter and superior phase noise. PDI provides quick-turn sampling for your
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50000Xâ
40000X-99999X
C10000-C20000
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HC49U/N-R1.8432MHZT
Abstract: No abstract text available
Text: HA-Series Specifications 11.05L x 4.65W x 13.46H mm PDI HA-Series is a hermetically sealed quartz crystal in a HC-49U through-hole package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized
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HC-49U
25000Xâ
03000X
99999X
000MHz
C10000
C20000
2002/95/EC
MIL-STD-202
HC49U/N-R1.8432MHZT
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Untitled
Abstract: No abstract text available
Text: OC7-Series Specifications 7.00L x 5.00W x 1.80H mm PDI Model OC7-Series provides precision timing in a hermetically sealed package, and is available in both standard and custom frequencies and configurations. PDI provides quick-turn sampling for your proto-typing
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25000Xâ
00030X-99999X
C10000-C20000
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Untitled
Abstract: No abstract text available
Text: C3-Series Specifications 3.20L x 2.50W x 0.80H mm PDI C3-Series is a hermetically sealed quartz crystal in a seam-welded ceramic SMT package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized parameters.
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25000Xâ
12000X
99999X
000MHz
999MHz
C10000
C15000
00MHz
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Untitled
Abstract: No abstract text available
Text: L3-Series Specifications 11.40L x 4.70W x 4.00H mm PDI L3-Series is a hermetically sealed quartz crystal in resistance-welded SMD and through hole packages. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized
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25000Xâ
03600X
99999X
6000MHz
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Untitled
Abstract: No abstract text available
Text: U1-Series Specifications 7.90L x 3.18W x 8.00H mm PDI U1-Series provides a broad rang of frequencies in a small profile, robust, high reliability UM1 resistance-weld enclosure. The U1 is available in a variety of frequency stabilities and tolerances, operating temperature ranges, and load capacitances and
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25000Xâ
08000X
99999X
000MHz
999MHz
C10000
C20000
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: L2-Series Specifications 11.40L x 4.70W x 3.45H mm PDI L2-Series is a hermetically sealed quartz crystal in resistance-welded SMD and through hole packages. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized
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25000Xâ
03600X
99999X
6000MHz
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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Untitled
Abstract: No abstract text available
Text: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the
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individual53
B1201,
KMPD9004E03
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R7600-M64
Abstract: S10362-11-100C circuit diagram of a laser lighter
Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights
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S10783
S10784
P2211
DE128228814
R7600-M64
S10362-11-100C
circuit diagram of a laser lighter
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HYS72T128000GR
Abstract: HYS72T128020GR HYS72T64000GR MO-237 PC2-3200R "sd card" 2GB
Text: D at a S h ee t, V 0 .8 2 , O c t. 2 00 3 H YS72 T 640 00 GR 5 12 M B y t e H YS72 T 128 00 0GR ( 1 G B y t e ) H YS72 T 128 02 0GR ( 1 G B y t e ) H YS72 T 256 02 2GR ( 2 G B y t e ) DDR 2 Reg istered D IMM Modu les M em or y P r od uc t s N e v e r s t o p
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HYS72T64000GR,
HYS72T128020GR
HYS72T128000GR,
HYS72T256022GR
240-pin
PC2-3200R
/-4300R
/-5300R
1024Mb
HYS72T128000GR
HYS72T128020GR
HYS72T64000GR
MO-237
"sd card" 2GB
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practical application
Abstract: IGC10000 IGC10408 IGC10756 IGC11500
Text: sßünmiiiL 2. DIGITAL CMOS Gate Arrays General Description The IG C10000 series fam ily of gate arrays provide a practical approach to the developm ent of custom logic circuits. These sem i-custom circuits have greatly reduced developm ent costs com pared with the “ full
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IGC10000
IGC10408
IGC10756
IGC11500
IGC10408
C10756
practical application
IGC11500
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A81DC
Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF
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ANE408/D
DSP56000/1
ANE408
ANE008)
DSP56000/1
300-3400hz
A81DC
a21dc
a51dc
SG 2368
FE8800
ED8000
E78000
FA6400
0110FFFF
e7040
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