C 2851 TRANSISTOR Search Results

C 2851 transistor

Abstract: 2SC4428 2851 transistor npn
Contextual Info: Ordering number: EN 2851 _ 2 S C 4 4 2 8 No.2851 N P N Triple Diffused Plan ar Silicon Transistor Sw itching R egulator Applications F eatu res . High breakdown voltage, high reliability •Fast switching speed tf: O.lps typ •W ide A SO •Adoption of M B IT process

Contextual Info: Z * EX4R XR-2851 PRELIMINARY INFORMATION Ground Fault Interrupter FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR -2851 G ro u n d F a u lt In te rru p te r is designed to be used in c irc u its p ro vid in g g rou n d fa u lt p ro te c tio n fo r A C

Contextual Info: 2851-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2851-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2851-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

EN2851

Abstract: 2SC4428 D1898
Contextual Info: Ordering number:EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.

Contextual Info: Ordering number:ENN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

2851 transistor npn

Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Contextual Info: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to

2851 transistor npn

Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
Contextual Info: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

transistor k 2843

Abstract: K 2843 2SC2832 transistor k 2837 transistor 2839
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

transistor k 2843

Abstract: transistor z5t 2SC2832
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor

BGY90B

Abstract: VS1M VSI drive mw 137 A-04 a2849
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> DEVELOPMENT DAi Ai • ” b 1353^31 Q 0 1 3 H Û Û * JJ-iJ L .U U .J I BGY90B This data sheat contains advanc« in form ation and specifications are subject to change w ith o u t notice. V of U.H.F. POWER MODULE The B G Y 9 0 B is a two stage u.h.f. power module designed for use in mobile transmitting equipment

MRFA2604

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transm itter The MRFA2604 is a solid state class AB am plifier specifically designed for TV transposers and transmitters. This am plifier incorporates microstrip technology

Contextual Info: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz

HSMS2851

Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
Contextual Info: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz

pg 3 ab

Abstract: CM2851ACIM25 CM2851SIM25
Contextual Info: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA

Contextual Info: CM2851 150mA CMOS LDO WITH EN & PG GENERAL DESCRIPTION FEATURES The CM2851 family is positive, linear regulators featured low ! Very Low Dropout Voltage quiescent current 30µA typ. with low dropout voltage, ! Low Current Consumption: Typ. 30µA, Max. 35µA

D1314

Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
Contextual Info: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics

2H2222A

Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
Contextual Info: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s

29T1

Abstract: H066300T
Contextual Info: HD66300T Horizontal Driver for TFT-Type LCD Color TV HITACHI Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals R, G and B.

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7