TRANSISTOR ba 751
Abstract: TRANSISTOR 751
Text: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple
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D50M33fl
1000mA
0S0433Ã
0003bb0
TRANSISTOR ba 751
TRANSISTOR 751
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1N914
Abstract: No abstract text available
Text: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN
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1N914
500mA
Vn-20
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2851 transistor npn
Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to
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0S0433Ã
CI003L
-H053
2851 transistor npn
A1409-1
Transistor A14
2N2907
A-04
a1-4095
PNP 2N2907
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Untitled
Abstract: No abstract text available
Text: f Data Sheet 27627.125 ATS6; 2LSA ZERO-SPEED, SELF-CALIBRATING, N O N -O RIEN TEV, HALL-EFFECT GEA R -TO O TH SENSOR The ATS632LSA gear-tooth sensor is an optimized Hall-effect IC/ magnet combination that provides extremely accurate tabth edge detection when used with large-pitch targets. The ¿^Kttuubassembly
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ATS632LSA
Mhf017
0S0433A
8737b
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