C 2811 TRANSISTOR Search Results

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A )

2SC4452

Abstract: EN2811
Contextual Info: Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.

2SC4452

Abstract: ITR06977 ITR06978 ITR06979
Contextual Info: Ordering number:ENN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.

2SC4452-2

Abstract: 10PA 2SC44 2SC4452 T500
Contextual Info: Ordering number: EN 2811 2SC4452 No.2811 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacity • Very small-sized package permitting the 2SC4452-applied sets to be made small and slim

a/TO111

Contextual Info: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-111 1 f1 TO-59 VCE sat max VOLTS •c @ ' b 2N2877 50 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 2N2878 50 5.0 40-120 1.0/2.0 2.0 5.0/0.5 2N2879 70 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 ’ 2N3996* 80 5.0 40-120 1.0/2.0 0.25 1.0/0.1

HSCH-1001

Abstract: 5082-2815 1N5165 5082-2970 5082-2813 5082-2805 1N5167 5082-2370 5082-2814 HSCH-1001 5082-2800
Contextual Info: COMPONENTS SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T ^ PACKARD 5082-2301/02/03/05 5082-2800 1N5711 5082- 2810(1N5712) 5O 82-2811(1N5713)0 5082-2835 5082-2900 HSCH-1001(1N6263)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 10 2 5 -1 1 5 0 MHz pulse com mon base am plifier applications such as TCAS, TACAN and M o de-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 W alts Peak

PNP DARLINGTON ARRAYS

Abstract: uln series ULN pnp uln 2803 relay driver ic pnp darlington array ULN 2803 relay driver ic 14 PIN IC ULN 2003 ic. uln 2003 pnp darlington array ic uln 2032A
Contextual Info: SPRAGUE INTERFACE INTEGRATED CIRCUITS SERIES 2000 and 2800 DARLINGTON ARRAYS These arrays high-voltage, are h igh -cu rre nt com prised of seven D arlington or e ight transistor silicon NPN Darlington pairs on a co m m o n m o n o lith ic substrate. units feature

SOT223 Package

Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base

bc577

Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

bc577

Abstract: BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

2SC2802

Abstract: 2808 transistor n2818
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

trw62601

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power O scillator TVansistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz • High Output Power 1.2 W Typ @ 2.5 GHz

ULN2803N

Abstract: ULN2800 ULN2804N ULN2803D ULN2010 uln2004 application note ULN2020 ULN2000 ULN2801N ULN2803-D
Contextual Info: IN TEG RATED POWER &2 D Ë MflaSÛTÛ □□□□SSS 1 | ~ jK K V : 4825898 INTEGRATED POWER 'M Y E 82D 002 52 D Darlington Transistor Arrays D , . SEMICONDUCTORS LTD Features Description ' 7 or 8 darlington power drives In single package 50V or 95V breakdown voltage

MRF650

Contextual Info: MOTOROLA wm S E M IC O N D U C T O R TECHNICAL DATA M R F6 50 The RF Line 2 N P N S il i c o n R F P o w e r T r a n s is t o r 50 WATTS, 512 MHz RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r a pp licatio n s in ind u stria l and

Contextual Info: Section 28. WDT and SLEEP Mode HIGHLIGHTS 28 This section of the manual contains the following major topics: Introduction . 28-2 Control Register . 28-3

philips 433-2 npn

Abstract: handbook philips ic26 Philips Components, Soft Ferrites Data Handbook M philips hybrid amplifier OM modules display dc05 Philips IC20 4 linear handbook philips semiconductor data handbook 4000 series CMOS Logic ICs Magnetic Products, Soft Ferrites, Data Handbook M
Contextual Info: Philips Semiconductors Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete Semiconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly. Book Title

AN607

Abstract: PIC18CXXX
Contextual Info: Section 28. WDT and SLEEP Mode HIGHLIGHTS This section of the manual contains the following major topics: 28.1 28.2 28.3 28.4 28.5 28.6 28.7 28.8 Introduction . 28-2

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW

PS2814

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW

Contextual Info: G5800 Global Mixed-mode Technology Inc. GSM Power Management System Features „ „ „ „ „ „ „ „ „ „ „ „ „ General Description Handles all GSM Baseband Power Management 2.8V to 5.5V Input Range Charger Input up to 15V Seven LDOs Optimized for Specific GSM Subsystems