C 1114 TRANSISTOR Search Results

QRB1113

Abstract: LTA 703 S
Contextual Info: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an

KSR1114

Abstract: KSR2114 9vv marking
Contextual Info: KSR2114 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=47K£1) • C om plem ent to K S R 1114 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S B 1114 is designed fo r aud io freq uency pow er a m p lifie r and s w itch ing a p p lic a tio n , especially in H y b rid Integrated C ircuits, FEATURES

Contextual Info: U U HFA1114 H A R R IS S E M I C O N D U C T O R 850MHz Video Cable Driving Buffer Novem ber 1996 Features Description • Access to Summing Node Allows Circuit Customization T h e H FA 1114 is a closed loop Buffer featuring user program m able gain and ultra high speed performance.

ECG1114

Contextual Info: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

1117 S Transistor

Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

Contextual Info: SEMICONDUCTOR DICE PROCESS CHARTS TRANSISTOR DICE PROCESS CHART SW IT C H IN G T R A N S IST O R S: Sample evaluation of all batches on switching parameters HIGH FREQ U EN CY T R A N S IST O R S: Sample evaluation of all batches on fT and capacitance 11-13

sensor QRD1114

Abstract: QRD1114 reflective 1114 transistor C 1114 transistor
Contextual Info: REFLECTIVE OBJECT SENSOR IPT0ELEC1IIIIC5 QRD1113/1114 ii"' , ^ ' ' ü. .iUJ-'l-¿W.P. . PACKAGE DIMENSIONS T h e QRD1113/1114 reflective sensors consist of an PIN 1 INDICATOR infrared emitting diode and an NPN silicon — .083 2.11 II phototransistor m ounted side by side in a black plastic

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

Contextual Info: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is

T-43-25

Contextual Info: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail

UM3512-01C

Abstract: UM3512-01R UM3512 transistor organ f4 sl 512-note 32653 16 ohm 0.25w SPEAKER piano keyboard
Contextual Info: UM3512 Series Melody Organ 1C Features • ■ ■ ■ ■ ■ ■ ■ generate system clock ■ One key, one song with auto-stop Junction, or stop by pressing “ RESET ■ key ■ Play all the songs continuously with auto-stop function 1st,2nd . ,15th,stop , or stop by pressing

C2023 transistor

Abstract: c2023 transistor c 2316 transistor c2023 K C2023
Contextual Info: mm jm m R F P r o d u c ts M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 20 23-16 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • FREQUENCY £.0 2.3GHz «PO W ER OUT 16.0W » POWER GAIN

N3C SOT

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type

SD1887

Abstract: transistor 2Fn M147 TCC2023-16
Contextual Info: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W

tn0201t

Abstract: 38212 3-8212
Contextual Info: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications

transistor bI 240

Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Contextual Info: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

common collector PNP

Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effecf power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable