38212 Search Results

RM0207S

Abstract: Firstronics Resistor Firstronics Firstronics RM0207S Firstron 0207S TA-I RM RM 3512 RM0204 RM0204S
Contextual Info: SPECIFICATION COAT-INSULATED FIXED METAL FILM RESISTORS "RM" series FIRSTRONICS COMPONENTS PTE LTD BLK 1020 TAI SENG AVE #04-3510/3512 TA! SENG INDUSTRIAL ESTATE SINGAPORE 534416 TEL: 65 2873825/3821208 FAX: (65)2840368/3822290 E-MAIL ADD:firstron@mbox5.sin9net.com.sg

MMT2369

Contextual Info: MOTOROLA SC -CDIODES/OPTOJ ^34 DlT|b3b75SS 003ÛE15 b 1 ~ 34 c 38212 6 3 6 7 2 5 5 MO TO R O L A SC DIODES/OPTO D "p’Z S -U MICRO-T (continued) MMT2369 — NPN SWITCHING TRANSISTOR • NPN silicon annular transistors for low-current, high-speed switching applications.

Contextual Info: K22 Sub-Family Reference Manual Supports: MK22FX512VLK12, MK22FN1M0VLK12 Document Number: K22P80M120SF5RM Rev. 2, May 2013 K22 Sub-Family Reference Manual, Rev. 2, May 2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document

Contextual Info: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

pt 4115 led driver

Abstract: WF24 Photodiode Array 32 element 0xB9
Contextual Info: K51 Sub-Family Reference Manual Supports: MK51DX256ZCLK10, MK51DX256ZCMB10 Document Number: K51P81M100SF2RM Rev. 5, 8 May 2011 K51 Sub-Family Reference Manual, Rev. 5, 8 May 2011 2 Freescale Semiconductor, Inc. Contents Section Number Title Page Chapter 1

Contextual Info: Stripping Lengths A. 16.5 B. 3.5 C. 7.5 A. 7.5 B. 4.3 C. 1.5 Stock No’s. 382-1333. 382-1462 382-1349. 382-1478 382-1355. Instructions V 10926 382-1377. 382-1399. A. B. C. 382-1361. 8.5 4.5 1.0 382-1282. 382-1513 382-1298. (Instructions V10935) 382-1276.

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

U32A2

Abstract: PIR D 203 S 4MBx32 B135n sb136 ti2048
Contextual Info: Enhanced Memory Systems Inc. DM4M32SJ6MultibankEDO 4Mbx32EnhancedDRAMSIMM Product Specification Features Architecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache ■ 30ns DRAM Array for Fast Random Access to Any Page

Contextual Info: K22 Sub-Family Reference Manual Supports: MK22FX512VLH12, MK22FN1M0VLH12 Document Number: K22P64M120SF5RM Rev. 2, May 2013 K22 Sub-Family Reference Manual, Rev. 2, May 2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document

Contextual Info: LTC3822-1 No RSENSETM, Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual N-Channel MOSFET Synchronous Drive No Current Sense Resistor Required Optimized for 3.3VIN and Li-Ion Applications

WNW MAC

Abstract: capacitive touch key sensor stm MCU PT 4962 MCF51JF128RM bet Chn 835 MCF51JF64 49733 fbt hr 8448
Contextual Info: MCF51JF128 Reference Manual Supports the MCF51JF32, MCF51JF64, and MCF51JF128 Document Number: MCF51JF128RM Rev. 3, 05/2011 Preliminary MCF51JF128 Reference Manual, Rev. 3, 05/2011 2 Preliminary Freescale Semiconductor, Inc. Contents Section Number Title Page

lrc 903

Abstract: EXT_CSD IEC 439-1
Contextual Info: K51 Sub-Family Reference Manual Supports: MK51DX256ZCLL10, MK51DN512ZCLL10 Document Number: K51P100M100SF2RM Rev. 5, 8 May 2011 K51 Sub-Family Reference Manual, Rev. 5, 8 May 2011 2 Freescale Semiconductor, Inc. Contents Section Number Title Page Chapter 1

Contextual Info: 1 1 1 1223456457 1234567894A2B894CDEF4244797 4D!87 8"4 *#4DFA*-&'$%*FA4 #$%&'# 4 4 -A9 ! -A9 ! 56 #" 895A # 733 733 -A9 -A9 5/4263 !! ! !"   % 9$"! & 9652 $ 38-2. + 5693. # 733456 ! 8-./0  5693 " 38-2 # + $ & % 123

Contextual Info: Appendix to MKP385 www.vishay.com Vishay BCcomponents Detailed Ratings ELECTRICAL DATA 1 URDC (V) CAP. ( F) 0.011 min. 160 82 max. 0.010 min. 250 62 max. 0.0043 min. 400 27 max. 0.0015 min. 630 15 max. 0.001 min. 850 10 max. 0.00047 min. 1000 6.8 max. 0.00047 min.

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

CY7C182

Abstract: EME-6300H
Contextual Info: Qualification Report January 1994, QTP #92511 & 94451, Version 2.0 CY7C182 8K x 9 Static R/W RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

scl 4023 ae pin diagram

Contextual Info: TOSHIBA TM P87C M38/P38/S38 CMOS 8 -Bit M icrocontroller TMP87CM38N/F*, TMP87CP38N/F*, TMP87CS38N/F* The 87CM38/P38/S38 is the high speed and high performance 8 -b it single chip m icrocom puter. This MCU contains CPU core, ROM, RAM, in p u t/o u tp u t ports, six m u lti-function tim e r / counter, serial bus interface, o n ­

TMP87CM38N

Abstract: 87cp38 SCL 4011 BC ic 4026 use in digital pulse counter BLF 272 digital ic cd 4066 DVP 28 sv 4011 BP TOSHIBA IC CD 4033 pin diagram OC23
Contextual Info: TO SHIBA TM P87C M38/P38/S38 CMOS 8 -BIT MICROCONTROLLER TMP87CM38N/F, TMP87CP38N/Ff TMP87CS38N/F The 87CM38/P38/S38 is the high speed and high performance 8 -bit single chip microcomputer. This MCU contains CPU core, ROM, RAM, input/output ports, six multi-function timer / counter, serial bus interface, on­

CSR 41315

Abstract: CSR 8510 ifr 3412 AMP 140 pin connector CSR 41315 9B
Contextual Info: MCF51QM128 Reference Manual Supports the MCF51QM32, MCF51QM64, and MCF51QM128 Document Number: MCF51QM128RM Rev. 1, 03/2011 Preliminary MCF51QM128 Reference Manual, Rev. 1, 03/2011 2 Preliminary Freescale Semiconductor, Inc. Contents Section Number Title Page

IFR 9540

Abstract: AL 4741-5 mcf51qf32 Marking BAM qfn ic 4565 differential code shift keying HF 907 OM
Contextual Info: MCF51QF128 Reference Manual Supports the MCF51QF32, MCF51QF64, and MCF51QF128 Document Number: MCF51QF128RM Rev. 0, 03/2011 Preliminary MCF51QF128 Reference Manual, Rev. 0, 03/2011 2 Preliminary Freescale Semiconductor, Inc. Contents Section Number Title Page

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page