Untitled
Abstract: No abstract text available
Text: ADAM TECH DC POWER JACKS ADAM TECHNOLOGIES INC. PC BOARD AND PANEL MOUNT ADC SERIES INTRODUCTION: Adam Tech A D C Series D C Power Jacks are P C board and panel mount power connectors that are generally used in conjunction with A C adapters in the conversion of A C wall voltage to lower D C volt
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MSCDB-1807
Abstract: H-1000 MSCDB-1311
Text: ISC D B SERIES CUTTING-EDGE TECHNOLOGIES OF EMI/EMC SOLUTIONS S M D P o w e r In d u c to rs FEATURES High energy storage and very low resistance. Sm allest size and high perform ance APPLICATIONS Notebook computer. Battery power equipment. D C /D C converter.
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MSCDB-0603
MSCDB-13
MSCDB-1807
60Max
45Max
92Max
MSCDB-1303
50Max
20Max
H-1000
MSCDB-1311
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VT82C586B
Abstract: VT82C585VPX
Text: , VT82C586B VIA Technologies Inc. VT82C586B PIPC P C I I n t e g r a t e d P e r ip h e r a l C o n t r o l l e r P C 9 7 C o m p l ia n t P C I- t o -IS A B r id g e w it h A C P I, D is t r ib u t e d D M A , P l u g a n d P l a y , M a s t e r M o d e P C I ID E C o n t r o l l e r w i t h U l t r a D M A -3 3 ,
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VT82C586B
VT82C586B
UltraDMA-33
60MAX
208-Pin
VT82C585VPX
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76605/1
Abstract: NMCS2412D CD TECHNOLOGIES NMA0506S 1020s 76605 76605/2 cwp25r NMV2412ST CWPC20R-01
Text: January 2004 Product Obsolescence Information From The Power Electronics Division of C&D Technologies Effective: December 4th, 2003 C&D Technologies Announces Obsoleted Product Models Please be advised, that as of December 4th, 2003, the below listed C&D Technologies Models will
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1006S
1020S
102D15F
WPC10R24D15FR
WPC10R24D15P
WPC10R24D15PR
WPC10R24S03FR
WPC10R24S03P
WPC10R24S03PR
WPC10R24S05F
76605/1
NMCS2412D
CD TECHNOLOGIES
NMA0506S
1020s
76605
76605/2
cwp25r
NMV2412ST
CWPC20R-01
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PN4258
Abstract: 2N5771 MMBT5771
Text: 2N5771 I MMBT5771 & Discrete P O W E R & S ig n a l Technologies _ National S e m i c o n d u c to r” MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e r y h ig h s p e e d s a tu ra te sw itc h in g at c o lle c t o r c u r r e n ts to 1 0 0 m A . S o u r c e d fro m P r o c e s s 6 5 . S e e
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2N5771
MMBT5771
PN4258
S01130
0GMG717
2N5771
MMBT5771
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Untitled
Abstract: No abstract text available
Text: B T & d TECHNOLOGIES SSE ] • 1165063 000042b b3T « B T D T "C -m -C D *1 T LST0X50 BT&D E C H N O L O G I E S CONNECTORIZED ELEDS Features: Applications: • Industry standard Connectors - FC, ST and SC • Optical Data Communication Transmitters • 1300nm wavelength
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000042b
LST0X50
1300nm
110nm
LST0450
LST0550
Th5-4306
DS030
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40 pin Segmented LCD
Abstract: id28
Text: The In form ation d isclo se d h e re in was o rigin a te d toy an d Is t h e p r o p e r t y o f D e n sltro n Technologies, D e n s lt r a n T e chn olo gie s r e c e r v e c a l l pa.± nt/ p ro p rie t a ry , o le c lgn ,u » , sale, m anuf t L c f c u r l n g and
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DG-1091
DG-1091-XP-y
DWS52
DG-1091
40 pin Segmented LCD
id28
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6 pin TRANSISTOR SMD CODE 5H
Abstract: mmic MARKING CODE 5h BGB707L7ESD MMIC marking code R transistor smd marking Ag
Text: T a r ge t D a t a S h e e t , R e v. 1 . 2 , M ar c h 2 00 9 BGB707L7ESD S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2009-03-06 Published by Infineon Technologies AG,
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BGB707L7ESD
informa035
BGB707L7ESD
6 pin TRANSISTOR SMD CODE 5H
mmic MARKING CODE 5h
MMIC marking code R
transistor smd marking Ag
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TN2219A
Abstract: PN2222A
Text: TN2219A _ D iscrete P O W E R & S ig n a l Technologies National f i S e m i c o n d u c t o r “ TN2219A NPN General Purpose Amplifier T h is d e v ic e is for u s e as a m ed iu m p o w e r am p lifie r a n d sw itch requiring c o lle c to r c u rre n ts u p to 5 0 0 m A . S o u rc e d fro m P ro c e s s 1 9 . S e e
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TN2219A
PN2222A
b5D113D
TN2219A
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Untitled
Abstract: No abstract text available
Text: D a t a S he et , V 0. 9 2 , D e c . 2 0 0 3 H Y B 1 8 T 1 G 4 00 A C H Y B 1 8 T 1 G 8 00 A C H Y B 1 8 T 1 G 1 60 A C 1 G b i t D D R 2 S D R AM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG,
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HYB18T1G400/800/160AC
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DIODE 5H
Abstract: mmbd1201 fw sot-23 5H MARKING BD4148 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE Diode Marking 1p SOT-23
Text: MMBD4148 I SE I CC I CA i Discrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r M M B D 4148 / SE / CC / CA FI r CONNECTION DIAGRAMS 5H TU ET M M B D 4148 M M B D 4148C C 5H Dò M M B D 4148C A M M B D 4148S E -V t + * t +* 1 D6 D4
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MMBD4148
OT-23
MMBD4148CA
MMBD4148CC
MMBD4148SE
414SSE
414SCC
4141C
MMBD1201-1205
DIODE 5H
mmbd1201
fw sot-23
5H MARKING
BD4148
Diode Marking 1p SOT-23
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Untitled
Abstract: No abstract text available
Text: Infineon technologies V23826-H18-C13/C313 a c /a c t t l 5V/3.3V V23826-H18-C53/C353 d c/d c (5V/3.3V) V23826-H18-C63/C363 a c /a c p e c l (5V/3.3V) V23826-H18-C73/C373 AC/DC (5V/3.3V) Single Mode 1300 nm 622 MBd ATM 1x9 Transceiver • Process plug included
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V23826-H18-C13/C313
V23826-H18-C53/C353
V23826-H18-C63/C363
V23826-H18-C73/C373
OC-12/STM-4
D-13623,
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transistor 2xw
Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
Text: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,
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BGB707L7ESD
transistor 2xw
transistor table
RF Bipolar Transistor
smd rf transistor marking
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BGF110
Abstract: GWLN1132 ESD CROSS sd card interface wafer level package
Text: D a t a S he et , V 2. 2, J u l y 2 00 7 B G F 11 0 S D C a r d I n te r f a c e E S D P r o t e c ti o n S m a l l S i g n a l D i s c r et e s Edition 2007-07-04 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.
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GWLN1132
WLP-24-2
BGF110
CWLG1065
BGF110
GWLN1132
ESD CROSS
sd card interface
wafer level package
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SIMID02
Abstract: SIMID01 L234N P05m diode AN007 BAR63 BAR63-03W BAR80 DECT transmitter siemens pindiode switch
Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 0 7 D E C T 1 . 9 G H z T r a n s m i t - R ec e i v e P I N - D i o d e Switch R F & P r o t e c ti o n D e v i c e s Edition 2006-10-10 Published by Infineon Technologies AG
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22-NOV-94
BAR80
BAR63-03W
SIMID02
SIMID01
L234N
P05m diode
AN007
BAR63
BAR63-03W
DECT transmitter siemens
pindiode switch
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cmh2
Abstract: RHV33 RHV32
Text: m m THICK FILM HIGH VOLTAGE/HIGH RELIABILITY MIL-APPROVED METAL GLAZE RESISTORS D ia m o n d s p ira lle d th ic k film e le m e n t H n a t c o n d u c tin g c e ra m ic s u b s tr a te CMH E p o x y c o a te d b o d y SERIES H ig h c o n d u c tiv ity p la te d o n
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MIL-R-49462
RHV30
RHV31
RHV32
RHV33
RHV34
RHV35
100ppm/
cmh2
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L2000
Abstract: A2307D catv laser predistortion circuit
Text: Data Sheet April 1998 group Lucent Technologies Bell Labs Innovations A2300-Type Laser 2000 Analog DFB Laser Module Features H ig h -p e rfo rm a n c e , m u ltiq u a n tu m -w e ll M Q W , d is trib u te d -fe e d b a c k (D F B ), s e m ic o n d u c to r laser.
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A2300-Type
DS98-198LWP
DS97-118,
-124LWP)
L2000
A2307D
catv laser predistortion circuit
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PN3640
Abstract: No abstract text available
Text: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e
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PN3640
MMBT3640
PN3640
OT-23
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6 pin TRANSISTOR SMD CODE 5H
Abstract: SMD TRANSISTOR MARKING 5H
Text: T a r ge t D a t a S h e e t , R e v. 1 . 3 , M ay 2 00 9 BGB707L7ESD S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2009-05-04 Published by Infineon Technologies AG,
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BGB707L7ESD
information035
BGB707L7ESD
6 pin TRANSISTOR SMD CODE 5H
SMD TRANSISTOR MARKING 5H
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Untitled
Abstract: No abstract text available
Text: D a t a s h e e t , V 3 . 0 , O c t o b e r 2 00 8 B G F 10 8L 7 C h a n n el L C D F i l t er A r r a y w i t h E S D P r ot e c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-10-23 Published by Infineon Technologies AG 81726 München, Germany
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WLP-18-2-N-PO
WLP-18-2
BGF108L
WLP-18-2-N-TP
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Untitled
Abstract: No abstract text available
Text: eme PRECISION HIGH-VOLTAGE THICK FILM RESISTORS D ia m o n d s p ira lle d Ih tc k film e lo m w it H e a t c o n d u c tin g c e r a m ic s u b s lra te CGH E p o x y c o a te d b o d y SERIES H ig h c o n d u c tiv ity p la te d o n n ic k e l te rm in a tio n
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W51VI»
100K--------------------C
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GF106
Abstract: wafer level package sim card chips sim card esd protection
Text: D a t a S he et , V 2 . 2 , F e b r u a r y 2 00 8 B G F 10 6 S I M C a r d I n t e r f a c e F i l t e r a n d E S D P r ot e c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-02-19 Published by Infineon Technologies AG 81726 München, Germany
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BGF106
BGF106
GF106
wafer level package
sim card chips
sim card esd protection
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N0737
Abstract: CT2200 IEC61000-4-22 BGF108L
Text: D a t a s h e e t , V 3 . 0 , O c t o b e r 2 00 8 B G F 10 8L 7 C h a n n el L C D F i l t er A r r a y w i t h E S D P r ot e c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-10-23 Published by Infineon Technologies AG 81726 München, Germany
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WLP-18-2-N-PO
WLP-18-2
BGF108L
WLP-18-2-N-TP
N0737
CT2200
IEC61000-4-22
BGF108L
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MMPQ3467
Abstract: SOIC-16 TN3467A
Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .
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TN3467A
MMPQ3467
O-226
SOIC-16
S0113D
D04DbMfl
MMPQ3467
SOIC-16
TN3467A
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