BYY DIODE Search Results

BYY 56

Abstract: BYY67 MQ-5 BYY57 JSG300
Contextual Info: Einpreßdioden Press-fit diodes Diodes press-fit Typ Type Vrrm Vrsm = If r m s m Ifsm V • BYY 5 7 « ■ BYŸ 57/58-E 75 150 300 ■ BYY 57/58 ■ BYY.5W08Æ 4QQ ‘ SfO 700 If a v m ^ c V TO Tt Rthjc Wj max 10 ms, 10 ms, >v| = 1v, tvj max t'.'i max t'.'i max

BYY58-100

Contextual Info: BYY 57 / BYY 58 Silicon rectifier diodes FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies • Rectifier bridges PIN CONNECTIONS

Contextual Info: BYY 53/BYY 54 Silicon rectifier diodes o“;-1«-;:; FEATURES • Forward current 25 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package F1-3-2-ÏÏ APPLICATIONS • Rectifying in car generators

BYY58

Contextual Info: Press-fit diodes Type V rrm V rsm If r m s m - 75 • BYY 57/58 ■ BYY 57/58-E 400 Type ,/i2dt W in / t c R th jc V TO rT 1», = tv, - 180 °el 1«! may sin, max Outline V rrm 10 ms, 10 ms, tv, , tvi ,„a , A A A2s A/°C V m fi ° c /w °c 150 300 55

Contextual Info: Silicon rectifier diodes BYY57/BYY 58 FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies

Contextual Info: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY

Contextual Info: Einpreßdioden Press-fit diodes Diodes press-fit Typ V rrm Type V rs m = V r r m If r m s m A 75 #50 300 5 5 . ’ BYŸ 57/58-E BYY 57/58 400 ' f a id 700 ,f&,' ! 11 55 If r m s m V rrm Maßbild RthJC 10 ms, tv, = 1v, = 180 °el tvj max t'.'i max fwi max

BYY 56

Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
Contextual Info: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75

BYS 045

Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Contextual Info: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max

diodes byw

Abstract: 29150 BYV 35 C
Contextual Info: Epitaxial rectifier diodes Type V rrm = 2 5 “C t* V VF Ifs m Ifa v m A 10 m s, •f W max t v| A V Ir = Ifavm = 2 5 °C VR tuj tv j max trr Outline = V rrm = t vj max mA ns °C BYR 29-800 800 8 60 < 1 ,7 5 < 0 ,2 <75 150 132 BYT 79-500 500 14 150 < 1 ,4

BYW 200

Abstract: BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45
Contextual Info: Type Vrrm I favm tA = 25°C V A 34032T7 D0D135E Sbû b lE » eupec Epitaxial rectifier diodes Ifsm vF Ir 10 ms, tv j max ¡F = • f a v m = 25 °C VR = Vrrm tvj — tVj max A V mA BYR 29-800 800 8 60 BYT 79-500 500 14 BYV 29-400 400 trr tvj max ns °c IUPEC

Contextual Info: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max

BYY 56

Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Contextual Info: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C

BYY 56

Abstract: BYV 35 byv 65 BYV 200
Contextual Info: ~V-03-0\ Epitaxial rectifier diodes Type V rrm Ifavm V 10 A 800 • 3M03217 DPDD151 i s t VF I fs m = 2 5 °C tA BYR 29-800 11E D eupec ms, ¡f Ir = I favm = 25 °C Outline = V rrm = t Vj max VR t v, A V mA ns < 1 ,7 5 < 0 ,2 < 60 UPEC Ivj max trr tv| max

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

D668N

Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
Contextual Info: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO

MM3Z20VT1

Contextual Info: SOD-323 Sma ll ssigna igna l zzene ene r d diode iode s 0.016 0.40 0.057(1.45) 200 mW Po Power wer diss ipat ion 0.010(0.25) 0.045(1.15) 0.070(1.80) Idea l fo forr ssurfac urfac e m moun oun tted app applicat licat ion 0.063(1.60) Zene r b break reak dow n vvolta

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

Contextual Info: SGC0560S Surface Mount Schottky Rectifier Reverse Voltage 60V Forward Current 5A Features • • • • • • • • • Schottky barrier diodes Low forward voltage drop Low leakage current Moisture sensitivity: level 1, per J-STD-020 J STD 020 Solder dip 260 °C, 10 s

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

ELECTRONIC BALLAST D1S

Abstract: R15D3 marking code FA sot25
Contextual Info: AL8807 HIGH EFFICIENCY LOW EMI 30V 1A BUCK LED DRIVER Description Pin Assignments Top View NEW PRODUCT The AL8807 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in

Contextual Info: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'