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    BYY 56 Price and Stock

    Micron Technology Inc MTFDKBA256TGE-1BL1AABYY

    Solid State Drives - SSD 2550 256GByte M.2 22x80x2.3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTFDKBA256TGE-1BL1AABYY 108
    • 1 $56.39
    • 10 $47.92
    • 100 $42.5
    • 1000 $42.5
    • 10000 $42.5
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    Neutrik USA Inc NBNC75BYY11

    RF Connectors / Coaxial Connectors CBL END BNC REAR TWS CABLE O.D. 4 - 8MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NBNC75BYY11 73
    • 1 $4.03
    • 10 $4.02
    • 100 $3.41
    • 1000 $3.22
    • 10000 $3.15
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    Neutrik USA Inc NBNC75BYY9

    RF Connectors / Coaxial Connectors CBL END BNC REAR TWS CABLE O.D. 4 - 8MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NBNC75BYY9 13
    • 1 $4.03
    • 10 $4.03
    • 100 $3.42
    • 1000 $3.06
    • 10000 $3
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    Micron Technology Inc MTFDKBA960TFR-1BC15ABYY

    Solid State Drives - SSD 7450 1TByte M.2 22x80x3.8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTFDKBA960TFR-1BC15ABYY 1
    • 1 $258.59
    • 10 $254.64
    • 100 $249.05
    • 1000 $249.05
    • 10000 $249.05
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    Micron Technology Inc MTGAAAA256GD1-AA1CTBYY

    DRAM 256GB CXL CXL COMMERCIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTGAAAA256GD1-AA1CTBYY
    • 1 $4587.55
    • 10 $4587.55
    • 100 $4587.55
    • 1000 $4587.55
    • 10000 $4587.55
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    Find more BYY 56 price and stock on Findchips.com

    BYY 56 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYY56 Unknown Cross Reference Datasheet Scan PDF
    BYY56 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYY56 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BYY 56 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY


    Original     		SK75GD126T c9-00& PDF

    BYS 045

    Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
    Text: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max


    Original     		PDF

    LG 5804

    Abstract: No abstract text available
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 PDF

    A004R

    Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R RO4350 VMMK-1218-BLKG USL10 PDF

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'


    Original     		SK35DGDL126T PDF

    A004R

    Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R MM20 RO4350 VMMK-1218-BLKG 802.11abgn PDF

    LG 5804

    Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 PDF

    DR-B 2003

    Abstract: drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP
    Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor


    Original     		TPS736xx SBVS038T 400mA 30mVRMS 100kHz) DR-B 2003 drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP PDF

    TPS73618-EP

    Abstract: TPS73615-EP TPS73630-EP TPS73632-EP TPS73625-EP
    Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor


    Original     		TPS736xx SBVS038T 400mA 30mVRMS 100kHz) TPS73618-EP TPS73615-EP TPS73630-EP TPS73632-EP TPS73625-EP PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    IS42VM16100G

    Abstract: No abstract text available
    Text: IS42VM16100G Advanced Information 512K x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42VM16100G is a low power 16,777,216 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42VM16100G 16Bits IS42VM16100G -40oC 1Mx16 IS42VM16100G-6TLI 50-pin IS42VM16100G-75TLI PDF

    Making the Right Trade-offs for Sensor Networks

    Abstract: No abstract text available
    Text: Making the Right Trade-offs for Sensor Networks Hardy Schmidbauer, Semtech Corporation The proliferation of cost-effective wireless technology and widely available system solutions has led to the explosion of applications utilizing sensor networks and the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF2710T N-Channel PowerTrench MOSFET 250 V, 25 A, 42.5 mΩ Features Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDPF2710T O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: PARAL P LLELING TU425 T 5-SER RIES P POWE ER APPLICATION NOTE SUPPLIE ES FO OR LO OAD S SHAR RING Purpo ose: This app plication note provides in nformation concerning paarallel operaation of the SLPE TU425-‐SERIES series power suppliees. Parallel operation offeers the abilityy to have red


    Original     		TU425 TU425â PDF

    Fairchild Semiconductor DS-513

    Abstract: No abstract text available
    Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP2614 O-220 Fairchild Semiconductor DS-513 PDF

    IS42SM16400G

    Abstract: 42SM16400G IS42SM16400G-75BLI
    Text: IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM16400G 16Bits IS42SM16400G -40oC 4Mx16 IS42SM16400G-6BLI 54-ball IS42SM16400G-75BLI 42SM16400G IS42SM16400G-75BLI PDF

    D405N

    Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
    Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC


    OCR Scan     		G0D132T t-10r BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D3507N D405N AEG T 51 N 1200 AEG D 251 N 1200 d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200 PDF

    D668N

    Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
    Text: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO


    OCR Scan     		tA-45 BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D668N D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668 PDF

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


    OCR Scan     		N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790 PDF

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    pj 69 diode

    Abstract: F533R IRF530 IRF
    Text: 2 HARRIS IRF530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* ay 1992 Features • Package T0220AB 12A and 14A, 80V - 100V TO P VIEW • rDS °n = 0.16 fl and 0.23ft • Single Pulse Avalanche Energy Rated* DRAIN (F L A N G E )


    OCR Scan     		IRF530/531/532/533 IRF530R/531R/532R/533R T0220AB IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R pj 69 diode F533R IRF530 IRF PDF

    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


    OCR Scan     		06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes PDF