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    STMicroelectronics BYW51FP-200

    DIODE ARRAY GP 200V 10A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BYW51FP-200 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.02502
    • 10000 $1.02502
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    BYW51F Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYW51F STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF
    BYW51F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYW51F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYW51F STMicroelectronics High Efficiency Fast Recovery Rectifier Diodes Scan PDF
    BYW51F100 SGS-Thomson 20A Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    BYW51F150 SGS-Thomson 20A Iout, 150V Vrrm Fast Recovery Rectifier Scan PDF
    BYW51F200 STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF
    BYW51F-200 STMicroelectronics High Efficiency Fast Recovery Rectifier Diode Original PDF
    BYW51F-200 STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF
    BYW51F-200A STMicroelectronics High Efficiency Fast Recovery Rectifier Diodes Scan PDF
    BYW51F-50 STMicroelectronics High Efficiency Fast Recovery Rectifier Diodes Scan PDF
    BYW51FP200 STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF
    BYW51FP-200 STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF
    BYW51FP-200 STMicroelectronics High Efficiency Fast Recovery Rectifier Diode Original PDF
    BYW51FP-200 STMicroelectronics HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Original PDF

    BYW51F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		PDF BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		PDF BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) BYW51G-200 O-220AB BYW51-200 BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V A1 K trr (max) A2 A2 K A1 25 ns TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		PDF BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		PDF BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, ISOWATT22cs. BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200

    byw51fp200

    Abstract: BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		PDF BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, byw51fp200 BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200

    E81734

    Abstract: BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB
    Text: POWER RECTIFIERS ULTRAFAST DIODES SMA SMB SMC D2PAK DPAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max Current 1 Amp 2 Amps 4 Amps 200 Volts 400 Volts 8 Amps 2 x 5 Amps 2 x 8 Amps 2 x 10 Amps 25 Amps 1 Amp 3 Amps 30 Amps Part Number VF (max) (*) @ rated current


    Original     		PDF STPR120A SMBYW01-200 SMBYW02-200 SMBYW04-200 BYW4200B BYW29G-200 STPR1020CB STPR1020CG STPR1620CG BYW51G-200 E81734 BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    BYV255V200

    Abstract: 1n5819 MINIMELF PACKAGE BYV255V-200 BAS70WFILM 1N5819 SOD-323 STPS40H100CW 1N5819 SOD-123 1n5817 SOD-123 stth30r03cg STPS1545CR
    Text: Rectifiers High Power Efficiency Quick Reference Guide 20V, 30V and 40V SIGNAL SCHOTTKY DIODES Voltage max V Current (mA) P/N VF max @ IF (V) (mA) 10 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 40 3000 350 100 100 100 100 100 200 200


    Original     		PDF BAT60JFILM BAT47 BAR42FILM BAR43AFILM BAR43CFILM BAR43FILM BAR43SFILM BAT42 BAT43 TMMBAT42FILM BYV255V200 1n5819 MINIMELF PACKAGE BYV255V-200 BAS70WFILM 1N5819 SOD-323 STPS40H100CW 1N5819 SOD-123 1n5817 SOD-123 stth30r03cg STPS1545CR

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200
    Text: BYW51/F/G/FP-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K FEATURES AND BENEFITS n n n n n A2 SUITED FOR SMPS


    Original     		PDF BYW51/F/G/FP-200 ISOWATT220AB O-220FP) DO-220FP BYW51FP-200 BYW51G-200 O-220AB, ISOWATT220AB, O-220FPhts BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    125OC

    Abstract: BYW51 BYW51-200 BYW51F-200
    Text: BYW51 F -200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB) : Insulating voltage = 2000 V DC


    Original     		PDF BYW51 ISOWATT220AB) O220AB, ISOWATT220AB O220AB ISOWATT220AB BYW51-200 BYW51F-200 125OC BYW51-200 BYW51F-200

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


    Original     		PDF SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    BYW51

    Abstract: BYW51-200 BYW51F-200
    Text: BYW51 F  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB) : Insulating voltage = 2000 V DC


    Original     		PDF BYW51 ISOWATT220AB) O220AB, ISOWATT220AB O220AB ISOWATT220AB BYW51-200 BYW51F-200 BYW51-200 BYW51F-200

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    BYW51-200

    Abstract: BYW51F-200 BYW51G-200
    Text: BYW51/F/G-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES


    Original     		PDF BYW51/F/G-200 ISOWATT220AB) BYW51G-200 O220AB, ISOWATT220AB BYW51-200 BYW51F-200 BYW51G-200

    BYW51F-200

    Abstract: T0220AB BYW51 BYW51-200
    Text: SGS-THOMSON BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB): Insulating voltage = 2000 V DC


    OCR Scan     		PDF BYW51 ISOWATT220AB) T0220AB, ISOWATT220AB T0220AB BYW51-200 ISOWATT220AB BYW51F-200 125oC 7T2TS37 BYW51F-200 T0220AB BYW51