BVGD Search Results

EFC060B

Contextual Info: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

2N5459

Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Contextual Info: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15

EFC240B

Contextual Info: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

K596 b 01

Abstract: K596
Contextual Info: K596 K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES Power dissipation PCM: 2. GATE 0.1 W Tamb=25℃ 3. DRAIN Gate Current I G: 10 mA Drain current 1 mA I D: Drain-Source voltage -20 V BVGDO: Operating and storage junction temperature range 123

EFC240B

Contextual Info: Excelics EFC240B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

EFC060B

Abstract: SG95
Contextual Info: EFC060B Low Distortion GaAs Power FET FEATURES 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

Contextual Info: DETTOSI ^¿hDhOO S9S Discrete PO W ER & Signal Technologies & National Semiconductor" N-Channel JFETs Switches / Choppers Device No. Case Style BVass *GSS BVGDO '□G O V @ I0 Min (jiA) Wf!) (nA) @ Max (V) VP (nA)@ VDS ^ G S Max (V) (V) <v)@ vDS Min Max (V) (nA)

EFC120B

Abstract: D48350
Contextual Info: EFC120B Low Distortion GaAs Power FET 550 FEATURES 50 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

2N5114

Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Contextual Info: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso

EFC120B

Contextual Info: Excelics EFC120B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

D113-0

Abstract: BF244A D1130
Contextual Info: This "I BVgss Igss Vp Vgs Case BVgdo •dgd ■d V @ VGS (V) Vus Style (V )0 I g (nAJBVco (nA) Uin Max (V) Min Max (V) Min (pA) Max oo “ I C|s» RetYps) ■oss (mA) @Vds (mmho) @ f (pF) ®VDS Min Max (V) Min Max (MHz) Typ (V) NF (dB)@ RG= 1k Cm Process Pkg.

Contextual Info: JFET Glossary of Symbols JFET Glossary of Symbols DC PARAMETERS BV DGO V or BVGDO BV SGO(V) or BVGSO BV GSS(V) or BV or V(BR)GSS IDGO(pA) or IGDO ID(mA) or ID(ON) ID(OFF)(pA) IDSS(mA) Drain-Gate Breakdown Voltage with Source Open Circuit The breakdown voltage of the drain-gate

Pt 2229

Abstract: EFC240D
Contextual Info: Excelics EFC240D PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

EFC480C

Contextual Info: Excelics EFC480C PRELIMINARY DATA SHEET Low Distortion GaAs Power FET  • • • • • • • +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK

2N3820 NATIONAL SEMICONDUCTOR

Contextual Info: D iscrete POW ER & Signal Technologies National Semiconductor P-Channel JFETs Switches / Choppers b v gss Device No. Case Style ’ess BVGDo nA @ VD0 (V)@ lG Max (V) Min (fiA) J174 J175 J176 TO-92 TO-92 TO-92 30 30 30 1 1 1 J177 TO-92 30 1 P1086 P1087 TO-92 30

EFC060B-100F

Abstract: 130gm
Contextual Info: Excelics EFC060B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +25.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM”

EPB018A5-70

Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Contextual Info: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180

EFC120B-100F

Contextual Info: Excelics EFC120B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +28.0dBm TYPICAL OUTPUT POWER HIGH BVgd FOR 10V BIAS 9.0dB TYPICAL POWER GAIN AT 8GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM”

Contextual Info: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical

Contextual Info: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

Contextual Info: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE

EIA1414-2P

Abstract: EIB1414-2P
Contextual Info: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)