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    BV SOT Search Results

    BV SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
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    BV SOT Price and Stock

    Nexperia BC857BV,115

    Bipolar Transistors - BJT SOT666 45V .1A PNP BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC857BV,115 Reel 12,000
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    Nexperia BC847BV,115

    Bipolar Transistors - BJT SOT666 45V .1A NPN/NPN DB BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC847BV,115 Reel 12,000
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    Nexperia BC847BV,315

    Bipolar Transistors - BJT SOT666 45V .1A NPN/NPN DB BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC847BV,315 Reel 16,000
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    Nexperia BCM857BV,115

    Bipolar Transistors - BJT SOT666 45V .1A PNP/PNP MATCHD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BCM857BV,115 Reel 8,000
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    Nexperia BCM857BV,315

    Bipolar Transistors - BJT SOT666 45V .1A PNP/PNP MATCHD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BCM857BV,315 Reel 8,000
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    Find more BV SOT price and stock on Findchips.com

    BV SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXTP25140BFH

    Abstract: ZXTP25140BFHTA
    Text: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to


    Original     		ZXTP25140BFH -180V; -140V -260mV ZXTP25140BFHTA ZXTP25140BFH ZXTP25140BFHTA PDF

    ZXTN2

    Abstract: No abstract text available
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 ZXTN2 PDF

    ZXTN25060BFH

    Abstract: ZXTP25060BFH ZXTP25060BFHTA
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25060BFH -100V, -85mV ZXTN25060BFH ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA PDF

    marking 056

    Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
    Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25100BFH -140V, -100V -130mV ZXTN25100BFH marking 056 ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN PDF

    TS16949

    Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19020DFF 20V, SOT23F, PNP medium pow er transistor Summary BV CEO > -20V BV ECO > -4V IC cont = 5.5A V CE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to


    Original     		ZXTP19020DFF OT23F, ZXTN19020DFF D-81541 PDF

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598 PDF

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


    OCR Scan     		OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*


    OCR Scan     		LP0801 O-236AB* LP0801K1 0801N -150m -100m -200m 300jxs PDF

    Untitled

    Abstract: No abstract text available
    Text: T ra n s is to rs <S u rfa ce Mounted T y p e s > •SMT SC-59/Japanese SOT-23 •NPN Transistors Function Type ■ Ic (mA) Max. Polarity DG07717 BV ceo (V) BV ebo (V) 331 ■RHM @IC & VcE hpE Min. nonm Max. (mA) f T (MHz) Min. (V) Cob (pF) Max. LNGPA MMST5086


    OCR Scan     		SC-59/Japanese OT-23) DG07717 MMST5086 MMST-A20 MMST2222 MMST2222A MMST4401 UHFO-A56 MMST-A63 PDF

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor PDF

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


    OCR Scan     		T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360 PDF

    diode T132

    Abstract: resistor 22k ECG2355 resistor 10k ECG2352 ECG2343 ECG2344 ECG2347 resistor 4.7k ECG2365
    Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BV c e O Max. Collector Current lc Amps Base to Emitter Volts b v EBO Max. Device Diss. PD


    OCR Scan     		ECG2340 O-126N T45-1 ECG2341 ECG2342) ECG2342 ECG2341 ECG2343 SP-92 T13-2 diode T132 resistor 22k ECG2355 resistor 10k ECG2352 ECG2344 ECG2347 resistor 4.7k ECG2365 PDF

    resistor 22k

    Abstract: ecg2340 ECG2362 ECG2345 diode t48 ECG2349 ECG2341 ECG2342 ECG2343 ECG2344
    Text: T ran sistors cont'cl ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BVc e O Base to Emitter Volts BV e b O Max. Collector Current lc Amps Max. Device


    OCR Scan     		ECG2340 O-126N T45-1 ECG2341 ECG2342) ECG2342 ECG2341) ECG2343 ECG2359) SP-92 resistor 22k ECG2362 ECG2345 diode t48 ECG2349 ECG2344 PDF

    BC847U

    Abstract: BC857U
    Text: BC857U Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U Ordering Information Type NO. Marking Package Code BC857U BV SOT-323


    Original     		BC857U BC847U OT-323 KST-3023-000 -100mA, -10mA BC847U BC857U PDF

    MMB25V6ALT1

    Abstract: MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6
    Text: ‘ MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document bv MMBZ5V6ALT1/D DATA MMBZ5V6ALTI MMBZ6V2ALTI MMBZ15VALTI 5.6, 6.215 &20 Volt SOT-23 Dual Monolithic Common Anode Zeners * MMBz20vALT4~*, Motorola Transient Voltage Suppressors for ESD Protection


    Original     		MMBZ15VALTI OT-23 MMBz20vALT4~ 140WI OW21W15 24W609 2PHX31323E1 MMB25V6ALT1 MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6 PDF

    BC847UF

    Abstract: BC857UF
    Text: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F


    Original     		BC857UF BC847UF OT-323F KST-3042-001 -100mA, -10mA BC847UF BC857UF PDF

    zvn4424

    Abstract: No abstract text available
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 4 - OCTOBER 1995 ZVIM4424G - FEATURES * * * 240 Volt BV ds Extremely low RDS on =4-3Q Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches


    OCR Scan     		OT223 ZVIM4424G ZVN4424 ZVP4424G GEtr10V 300ns. ZVN4424G PDF

    zvn4206

    Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.


    Original     		OT223 ZVN4206G zvn4206 zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784 PDF

    VN0610L

    Abstract: TL032
    Text: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range


    OCR Scan     		VN0610L VN10KE/ VN10KM/ VN10KT OT-23 O-237 OT-23 150cC VN10KE TL032 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP01N40G-HF-3 N-channel Enhancement-mode Power MOSFET Fast Switching Characteristics D Low Gate Charge Simple Drive Requirement G 100% Avalanche-tested RoHS-compliant, halogen-free SOT-89 package BV DSS 400V RDS ON 16Ω ID


    Original     		AP01N40G-HF-3 OT-89 200mA AP01N40G-HF-3 AP01N40G OT-89 1000pcs J-STD-020C, PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2530GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Low Gate Charge Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description BV DSS


    Original     		AP2530GY-HF-3 OT-26 AP2530GY-HF-3 OT-26 12REF 37REF 90REF 20REF PDF

    VN10KM

    Abstract: vn10ke
    Text: _ I CGIOOIC \J N-Channel Enhancement-Mode /WOS Transistors, Zener Gate Protected C O RPO RATIO N VN0610L / VN10KE/ VN10KM/ VN10KT FEATURES ORDERING INFORMATION • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <SQ 60V Bv Package


    OCR Scan     		VN0610L VN10KE/ VN10KM/ VN10KT OT-23 VN10KE VN10KM XVN10KM O-237 PDF

    VN10KM

    Abstract: VN10K 55C 15v ZENER DIODE C06 60V VN10KE vn10kt VN0610L XVN10KM VN010KE
    Text: I » U lU W It N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • • • • Part Available in Surface Mount SOT-23 Zener protected Low rDS on <5£i 60V Bv VN0610L


    OCR Scan     		VN0610L VN10KE/ VN10KM/ VN10KT OT-23 VN10KE VN10KM O-237 VN10KT VN10K 55C 15v ZENER DIODE C06 60V XVN10KM VN010KE PDF