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    ZXTN2 Price and Stock

    Diodes Incorporated ZXTN2031FTA

    TRANS NPN 50V 5A SOT-23-3
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    DigiKey ZXTN2031FTA Cut Tape 15,445 1
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    Mouser Electronics ZXTN2031FTA 28,502
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    RS ZXTN2031FTA Bulk 10
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    TME ZXTN2031FTA 1,924 1
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    Diodes Incorporated ZXTN25020CFHTA

    TRANS NPN 20V 4.5A SOT-23-3
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    ZXTN25020CFHTA Digi-Reel 11,496 1
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    ZXTN25020CFHTA Reel 9,000 3,000
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    Diodes Incorporated ZXTN2007ZTA

    TRANS NPN 30V 6A SOT-89-3
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    DigiKey ZXTN2007ZTA Cut Tape 8,406 1
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    ZXTN2007ZTA Digi-Reel 8,406 1
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    ZXTN2007ZTA Reel 8,000 1,000
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    Diodes Incorporated ZXTN2007GTA

    TRANS NPN 30V 7A SOT-223-3
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    DigiKey ZXTN2007GTA Digi-Reel 4,731 1
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    Quest Components ZXTN2007GTA 131
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    ZXTN2007GTA 26
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    Diodes Incorporated ZXTN25040DZTA

    TRANS NPN 40V 5A SOT-89-3
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    DigiKey ZXTN25040DZTA Cut Tape 3,822 1
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    ZXTN25040DZTA Digi-Reel 3,822 1
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    ZXTN2 Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXTN2005G Diodes Incorporated 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005G Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005GTA Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005GTC Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005Z Diodes Incorporated 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2005Z Zetex Semiconductors 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2005ZQTA Diodes Incorporated PWR LOW SAT TRANSISTOR SOT89 Original PDF
    ZXTN2005ZTA Zetex Semiconductors 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007G Diodes Incorporated 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007G Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007GTA Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007GTC Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007Z Diodes Incorporated 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007Z Zetex Semiconductors 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007ZTA Zetex Semiconductors 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2010A Diodes Incorporated 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010A Zetex Semiconductors 60v Npn Low Saturation Medium Power Transistor In E-line Original PDF
    ZXTN2010ASTOA Zetex Semiconductors 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010ASTZ Zetex Semiconductors 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010G Diodes Incorporated 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ...

    ZXTN2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXTN2007G

    Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
    Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2007G OT223 OT223 ZXTN2007G ZXTN2007GTA ZXTN2007GTC zxtn PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ PDF

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor PDF

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA PDF

    MARKING 851

    Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A


    Original     		ZXTN2010Z ZXTP2012Z AEC-Q101 J-STD-020 ZXTN2010Z DS33661 MARKING 851 SOT89 MARKING CODE 5A SOT89 transistor marking 851 PDF

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89 PDF

    ZXTP2025

    Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		ZXTP2025F ZXTN2031F ZXTP2025 zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23 PDF

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA PDF

    ZXTN2011G

    Abstract: ZXTN2011GTA ZXTN2011GTC
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC PDF

    TS16949

    Abstract: ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		ZXTN25040DFL 350mW ZXTP25040DFL D-81541 TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL PDF

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA PDF

    TS16949

    Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP23015CFH -36mV ZXTN23015CFH D-81541 TS16949 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA PDF

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7 PDF

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZXTN2005G ZX5T869G OT223 OT223 ZX5T869GTA PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2040F 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 1A


    Original     		ZXTN2040F 500mV ZXTP2041F AEC-Q101 J-STD-020 MIL-STD-202, DS33668 PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZXTN2005GTA ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZXTN2005GTA ZX5T869G OT223 OT223 PDF

    ZETEX medium power complementary transistors

    Abstract: 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZETEX medium power complementary transistors 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA PDF

    ZXTN25040DFH

    Abstract: ZXTP25040DFH ZXTP25040DFHTA Marking 024
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA Marking 024 PDF

    relay 12v 100A

    Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to


    Original     		ZXTP23015CFH -36mV ZXTN23015CFH relay 12v 100A transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA PDF

    marking 322

    Abstract: br 2222 npn
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


    Original     		ZXTN2031F ZXTP2025F marking 322 br 2222 npn PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 PDF