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    BUZ90_ Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BUZ900

    N Channel Mosfet, 160V, 8A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:14V; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ900
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ900 Bulk 1
    • 1 $10.39
    • 10 $9.37
    • 100 $7.43
    • 1000 $6.02
    • 10000 $6.02
    		Buy Now

    TT Electronics Power and Hybrid / Semelab Limited BUZ906

    P Channel Mosfet, -200V, -8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ906
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ906 Bulk 1
    • 1 $8.88
    • 10 $8.01
    • 100 $6.35
    • 1000 $5.14
    • 10000 $5.14
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    TT Electronics Power and Hybrid / Semelab Limited BUZ905

    P Channel Mosfet, -160V, 8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ905
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    Newark BUZ905 Bulk 1
    • 1 -
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    Quest Components BUZ905 9
    • 1 $12
    • 10 $9
    • 100 $9
    • 1000 $9
    • 10000 $9
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    TT Electronics Power and Hybrid / Semelab Limited BUZ906P

    P Channel Mosfet, -200V, 8A, To-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ906P
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    Newark BUZ906P Bulk 1
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    TT Electronics Power and Hybrid / Semelab Limited BUZ901D

    N Channel Mosfet, 200V, 16A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ901D
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    Newark BUZ901D Bulk 1
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    Find more BUZ90_ price and stock on Findchips.com

    BUZ90_ Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ90 Unknown N-channel SIPMOS power transistor Original PDF
    BUZ90 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ90 Siemens Original PDF
    BUZ90 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ90 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ90 Infineon Technologies SIPMOS Power Transistor Scan PDF
    BUZ90 Motorola Switchmode Datasheet Scan PDF
    BUZ90 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUZ90 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ90 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ90 Unknown FET Data Book Scan PDF
    BUZ90 Siemens Power Transistors Scan PDF
    BUZ900 Magnatec N-channel power MOSFET for audio applications, 160V Original PDF
    BUZ900 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ900 Semelab MOS Power Transistor Scan PDF
    BUZ900D Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ900D Magnatec Silicon N-Channel Power Mosfet Scan PDF
    BUZ900D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ900DP Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ900DP Magnatec N-channel Power Mosfet Original PDF

    BUZ90_ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz90

    Abstract: BU790 transistor buz90 ti211 T0220AB buz90n buz-90
    Text: PowerMOS transistor_ BUZ90_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 0D14S51 T ■ i May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ90 0014S51 T0220AB; T-39-11 buz90 BU790 transistor buz90 ti211 T0220AB buz90n buz-90

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ90_ bb53131 0Q14S51 BUZ90 bb53T31 T-39-11 T-39-11-