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    BUZ11A DATA Search Results

    BUZ11A DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

    BUZ11A DATA Datasheets Context Search

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    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 BUZ11A

    buz11a circuit

    Abstract: BUZ11A
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 buz11a circuit BUZ11A

    buz11a circuit

    Abstract: BUZ11A st buz11a ISD 1400 d BUZ11A data
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11A O-220 175oC 50ghts buz11a circuit BUZ11A st buz11a ISD 1400 d BUZ11A data

    BUZ11A

    Abstract: buz11a circuit datecode G1
    Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11A O-220 175oC BUZ11A buz11a circuit datecode G1

    BUZ11

    Abstract: stmicroelectronics datecode BUZ11a buz11a circuit datecode G1
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A -TO-220 STripFET POWER MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11A -TO-220 175oC O-220 BUZ11 stmicroelectronics datecode BUZ11a buz11a circuit datecode G1

    lm 7085

    Abstract: lm 7085 circuit diagram AP-316 AR 5414 intel 28F256 intel 28F256 flash epl* Thermal printer 2147H SRAM 80C186 programming 5C032
    Text: AP-316 APPLICATION NOTE Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION January 1996 Order Number 292046-004 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in


    Original     		PDF AP-316 LA19d LA18d LA17d LA16d lm 7085 lm 7085 circuit diagram AP-316 AR 5414 intel 28F256 intel 28F256 flash epl* Thermal printer 2147H SRAM 80C186 programming 5C032

    bu2527af

    Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
    Text: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní


    Original     		PDF roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    c5353

    Abstract: Z11A
    Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY


    OCR Scan     		PDF BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A

    BUZ11A

    Abstract: No abstract text available
    Text: fZ 7 SCS-THOMSON BUZ11A [ * 03 & E g ï i » [ * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS(on BUZ11A 50 V 0.06 ß Id 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF BUZ11A BUZ11A

    BUZ11A

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ11A BUZ11A

    BUZ11A

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N * 7 /, « œ i L I ï ï [ M ] 0 S§ B U Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS(on BUZ11A 50 V 0.06 fi 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan     		PDF BUZ11A 00A///S BUZ11A

    BUZ11A

    Abstract: BUZ11
    Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF BUZ11A -220A 10peration BUZ11A BUZ11

    BUZ11 motorola

    Abstract: BUZ11 buz11a
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as


    OCR Scan     		PDF BUZ11 BUZ11A BUZ11 motorola buz11a

    K 3911

    Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
    Text: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,


    OCR Scan     		PDF BUZ11A 001431S T-39-11 T0220AB; 7Z21186 K 3911 transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ _ N AflER PHILIPS/DISCRETE DhE D B U Z 11A _ t.tsa'm D o m m s • T-39-11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF T-39-11 BUZ11A bbS3131

    Intel AP-401

    Abstract: AP-316 29204* intel lm2391
    Text: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE


    OCR Scan     		PDF AP-316 LA19d, LA18d, LA17d, LA19d LA18d LA17d LA16d Intel AP-401 AP-316 29204* intel lm2391

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


    OCR Scan     		PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF