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    BUZ 100 MOSFET Search Results

    BUZ 100 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BUZ 100 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz10

    Abstract: No abstract text available
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ10 O-220 175oC O-220 buz10

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
    Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET T YPE BUZ 11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 O-220 175oC BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220

    BUZ10

    Abstract: buz10 equivalent stmicroelectronics datecode
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ10 O-220 175oC BUZ10 buz10 equivalent stmicroelectronics datecode

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Dual N- AND P-Channel Power FET TO-220 PACKAGE

    Abstract: 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220
    Text: Power semiconductors Higher cell density, more rugged design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutationproof and more resistant to avalanche breakdowns. At the same time, their specific drain-source on


    Original     		PDF T0-220 OT-223 P-DSO-28 Dual N- AND P-Channel Power FET TO-220 PACKAGE 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220

    buz 90 af

    Abstract: TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72
    Text: Standard Power MOSFETs BUZ 72 A File N u m b e r 2262 N-Channel Enhancement-Mode Power Field-Effect Transistors 9 A, 100 V TDSIon = 0.25 D. N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ited a N anosecond s w itching speeds m Linear transfer characteristics


    OCR Scan     		PDF O-22CIAB buz 90 af TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72

    Untitled

    Abstract: No abstract text available
    Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,


    OCR Scan     		PDF BUZ900P BUZ901P

    BUZ MOSFET

    Abstract: No abstract text available
    Text: bDE D I 5133107 000D530 ST 1 • S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING


    OCR Scan     		PDF 000D530 BUZ905 BUZ906 BUZ900D BUZ905D BUZ901D BUZ906D BUZ MOSFET

    Untitled

    Abstract: No abstract text available
    Text: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES


    OCR Scan     		PDF Q000533 BUZ905D BUZ906D 300jiS BUZ900D BUZ901D

    Untitled

    Abstract: No abstract text available
    Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •


    OCR Scan     		PDF BUZ905P BUZ906P O-247

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES


    OCR Scan     		PDF BUZ900 BUZ901 BUZ900D BUZ905D BUZ901D BUZ906D

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics


    OCR Scan     		PDF O-220AB L320Vv

    49nF

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics


    OCR Scan     		PDF O-218AC 49nF

    BUZ 349 mosfets

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics


    OCR Scan     		PDF 92CS-33741 92gs-44236 BUZ 349 mosfets

    BUZ45A

    Abstract: BUZ45 transistor 6.z transistor 125W
    Text: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics


    OCR Scan     		PDF O-204AA BUZ45A BUZ45 transistor 6.z transistor 125W

    BUZ 325

    Abstract: BUZ45
    Text: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF O-204ig. BUZ 325 BUZ45

    55A400

    Abstract: BUZ60
    Text: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics


    OCR Scan     		PDF O-220RRENT 55A400 BUZ60

    transistor buz 311

    Abstract: BUZ41 BUZ 41 A diagram
    Text: Standard Power MOSFETs BUZ 41 A File N u m b e r 2256 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 4.5 A, 500 V rDS on = 1.5 O Features: • SOA is p ow er-dissipation lim ite d • N anosecond s w itching speeds m Linear transfer characteristics


    OCR Scan     		PDF O-220AB transistor buz 311 BUZ41 BUZ 41 A diagram

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    BUZ20

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics


    OCR Scan     		PDF MOSFETs-BUZ20 O-220AB 92GS-441 BUZ20

    BUZ45

    Abstract: No abstract text available
    Text: Standard Power MOSFETs File No. 2257 BUZ 45 N-Channel Enhancement-Mode Power Field-Effect Transistors 9.6 A, 500 V N -CH A N N EL E N H A N C EM EN T M ODE rosioni = 0 .6 O Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan     		PDF O-204AA BUZ45

    92CS-39526

    Abstract: No abstract text available
    Text: Standard Power MOSFETs B U Z 60B File N um b er 2261 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.5 A, 400 V Tostonl = 1.5 Q N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond sw itching speeds m Linear transfer characteristics


    OCR Scan     		PDF MOSFETs-BUZ60B O-220AB 92CS-39526

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn