Untitled
Abstract: No abstract text available
Text: BUP54 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Dimensions in mm 3 9 .9 5 1 .5 7 3 m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) FEATURES 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) • LOW VCE(SAT) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .
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BUP54
BUP54"
BUP54
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BUP54
Abstract: LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP54
O-204AE)
BUP54
LE17
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7 pin ic switching
Abstract: BUP54
Text: BUP54 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Dimensions in mm 3 9 .9 5 1 .5 7 3 m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) FEATURES 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) • LOW VCE(SAT) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .
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BUP54
7 pin ic switching
BUP54
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BUP54
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP54
O-204AE)
BUP54
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: SEUELAB LT ]> V 37E • Û1331Ô7 SE1VSELAB DEC 3 1 1987 V-b / » M. // BUP54 /> & , NPN MULTI-EPITAXIAL TRANSISTOR Designed for high energy applications requiring robust fast switching devices MECHANICAL DATA Dimensionsin mm FEATURES • LOW VCEI„„ « -1 6
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BUP54
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bup4
Abstract: No abstract text available
Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power
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EmitMJ14000
BUP49
BUP52
BUV61
BUS51
BUR51
BUP54
BUT92A
BUP51
G935A
bup4
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BUL52A
Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN
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DD453
BUL50A
S0T93
10min
BUL50B
T0220
BUL51A
30min
DUL51B
BUL52A
SOT93
BUP43
BUP47
BUP49
BUP53
BUL50A
BUL50B
BUL51A
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l55a
Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46
Text: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.
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UL55B
UL54B
UL54A
G577A
G677A
GC77A
UL55A
l55a
G535A
g435
L54B
G536a
UL-55
G335A
GB72A
BUP46
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bup43
Abstract: No abstract text available
Text: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25
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BUL46A
BUL46B
BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
bup43
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NPN Transistor 50A 400V
Abstract: NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor
Text: SEMELAB BUP 53 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Designed for high energy applications requiring robust fast switching devices D im ensions in m m FEATURES • LOW VCE s>t • FAST SWITCHING • SINGLE CHIP CONSTRUCTION • HIGH SWITCHING CURRENTS
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25Typ.
NPN Transistor 50A 400V
NPN 400V 40A
BUP51
BUP52
bup transistor
l82a
BUP53
BUp54
LE17
400v 50A Transistor
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T0251
Abstract: T0-251
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A
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BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
BUL51A
BUL51B
T0251
T0-251
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bup4
Abstract: bup57 bup44
Text: Power Management Division Power Management Division bipolar power transistors Non standard types B ip o la r p o w e r tr a n s is to r s S e m e la b m a n u f a c tu r e s an e x te n s iv e range of W e p r o d u c e m a n y c u s t o m e r - s p e c i f i c p a rts ,
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BUP52
BUP54
T0247
BUP56
BUP59
bup4
bup57
bup44
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