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    NXP Semiconductors BUK9L06-55B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 234 W; Maximum Drain Current (ID): 75 A; No. of Terminals: 3;
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    buk9l06-55b

    Abstract: MBL370 buk9l06
    Text: BUK9L06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data M3D794 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low


    Original     		BUK9L06-55B M3D794 BUK9L06-55B OT78C O-220AB) MBL370 buk9l06 PDF