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    BUK456 800 Search Results

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    BUK456 800 Price and Stock

    Philips Semiconductors BUK456-800B

    TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.5A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUK456-800B 8
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    		Buy Now

    Philips E C G Inc BUK456800A

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK456800A 74
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    BUK456 800 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK456-800 Philips Semiconductors PowerMOS transistor Original PDF
    BUK 456-800A Philips Semiconductors PowerMOS transistor Original PDF
    BUK456-800A Philips Semiconductors PowerMOS transistor Original PDF
    BUK456-800A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK456-800A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK456-800A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK456-800A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK456-800A Philips Components Datasheet Library 1989 Scan PDF
    BUK456-800A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK456-800A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK456-800B Philips Semiconductors PowerMOS transistor Original PDF
    BUK456-800B Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK456-800B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK456-800B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK456-800B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK456-800B Philips Components Datasheet Library 1989 Scan PDF
    BUK456-800B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK456-800B Philips Semiconductors PowerMOS transistor Scan PDF

    BUK456 800 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution PDF

    bu2527af

    Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
    Text: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní


    Original     		roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B PDF

    BUK456-800A

    Abstract: BUK456 BUK456-800B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		O220AB BUK456-800A/B BUK456 -800A -800B BUK456-800A BUK456 BUK456-800B PDF

    BUK456

    Abstract: BUK456-800A BUK456-800B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		O220AB BUK456-800A/B BUK456 -800A -800B BUK456 BUK456-800A BUK456-800B PDF

    BUK456

    Abstract: BUK456-800B Buk456800b BUK456-800A T0220AB buk456 800
    Text: Philips Components BUK456-800A BUK456-800B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-800A BUK456-800B BUK456 -800A -800B T0220AB; M89-1165/RC BUK456-800B Buk456800b BUK456-800A T0220AB buk456 800 PDF

    BUK456-50A

    Abstract: BUK456 N25Y 15 1E41 BUK456-50B T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • k b S 3 c131 002ÜSE0 5 ■ BUK456-50A BUK456-50B PowerMOS transistor T - 3 T - 13 GENERAL DESCRIPTION N-channel enhancement mode field-etfect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK456-50A BUK456-50B BUK456 N25Y 15 1E41 T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK456-50A BUK456-50B BUK456 PDF

    TI 60H

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. BUK456-60H


    OCR Scan     		BUK456-60H T0220AB TI 60H PDF

    Untitled

    Abstract: No abstract text available
    Text: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		0030b7D -TO220AB BUK456-60A/B BUK456 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-800A/B BUK456 -800A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies {SMPS , motor control, welding,


    OCR Scan     		BUK456-800A/B BUK456 -800A -800B T0220AB Limi60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-60A/B BUK456 T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		QQ30bRQ O220AB BUK456-800A/B BUK456 -800A -800B K456-800A bbS3T31 0030b84 PDF

    IPM tm 35

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-60A/B BUK456 T0220AB IPM tm 35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-60A/B BUK456 T0220AB PDF

    transistor k 385

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-800A/B BUK456 -800A -800B T0220AB transistor k 385 PDF

    LD25C

    Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
    Text: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bbS3131 30bRQ BUK456-800A/B T0220AB BUK456 -800A -800B LD25C BUK456-800A BUK456-800B PDF

    100-P

    Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
    Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		K456-60A/B BUK456 T0220AB BUK456-60A/B 100-P BUK456-60A BUK456-60B T0220AB dm 369 rv PDF

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
    Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		711062b D0b41Db BUK456-60A/B T0220AB BUK456 7110fi2b DDb411D BUK456-80A/B BUK456-60A BUK456-60B BUK456-80A PDF

    BUK456-800A/B

    Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK456-800A/B BUK456 -800A -800B T0220AB T0220AB; T0220 BUK456-800A/B BUK456-800A BUK456-800B T0220AB PDF

    BUK456

    Abstract: BUK456-800A BUK456-800B
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110fl2b BUK456-800A/B -T0220AB BUK456 -800A -800B 711062b DQb4130 BUK456-800A BUK456-800B PDF

    s00b

    Abstract: PQZ1
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		711002b BUK456-800A/B BUK456 -800A -80QB -T0220AB 711062b 00b4130 s00b PQZ1 PDF

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB
    Text: PHILIPS INTERNATIONAL bSE T> B 7 1 1 D 5 2 b D D b m O t i 267 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK456-60A/B T0220AB BUK456 BUK456-SQA/B BUK456-60A BUK456-60B PDF

    BUK456-50A

    Abstract: drain BUK456 BUK456-50B T0220AB
    Text: E5 E N AMER PHILIPS/DISCRETE ^£3=131 D 0Q20S20 S B U K 456-50A B U K 456-50B P o w erM O S tra n s isto r G E N E R A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		002GSE0 BUK456-50A BUK456-50B BUK456 BUK456-50A drain BUK456-50B T0220AB PDF