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    BU806 EQUIVALENT Search Results

    BU806 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BU806 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326

    TDA1180P

    Abstract: bu406d BU407D TDA1180 equivalent bu806 tv vertical sync
    Text: TDA1180P TV HORIZONTAL PROCESSOR • ■ ■ ■ ■ ■ ■ ■ ■ NOISE GATED HORIZONTAL SYNC SEPARATOR NOISE GATED VERTICAL SYNC SEPARATOR HORIZONTAL OSCILLATOR WITH FREQUENCY RANGE LIMITER PHASE COMPARATOR BETWEEN SYNC PULSES AND OSCILLATOR PULSES PLL


    Original     		PDF TDA1180P DIP16 TDA1180P 16-lead DIP16 PM-DIP16 bu406d BU407D TDA1180 equivalent bu806 tv vertical sync

    TDA1180P

    Abstract: direct tv r10 bu406d BU407D bu806 equivalent bw tv equivalent bu806
    Text: TDA1180P TV HORIZONTAL PROCESSOR • ■ ■ ■ ■ ■ ■ ■ ■ NOISE GATED HORIZONTAL SYNC SEPARATOR NOISE GATED VERTICAL SYNC SEPARATOR HORIZONTAL OSCILLATOR WITH FREQUENCY RANGE LIMITER PHASE COMPARATOR BETWEEN SYNC PULSES AND OSCILLATOR PULSES PLL


    Original     		PDF TDA1180P DIP16 TDA1180P 16-lead DIP16 PM-DIP16 direct tv r10 bu406d BU407D bu806 equivalent bw tv equivalent bu806

    TDA1180P

    Abstract: bu806 equivalent BU807 colour tv circuit diagram equivalent bu806 bu406d BU407D BU806 BU806 SGS
    Text: TDA1180P TV HORIZONTAL PROCESSOR • ■ ■ ■ ■ ■ ■ ■ ■ NOISE GATED HORIZONTAL SYNC SEPARATOR NOISE GATED VERTICAL SYNC SEPARATOR HORIZONTAL OSCILLATOR WITH FREQUENCY RANGE LIMITER PHASE COMPARATOR BETWEEN SYNC PULSES AND OSCILLATOR PULSES PLL


    Original     		PDF TDA1180P DIP16 TDA1180P 16-lead DIP16 PM-DIP16 bu806 equivalent BU807 colour tv circuit diagram equivalent bu806 bu406d BU407D BU806 BU806 SGS

    2N3055 plastic

    Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art


    Original     		PDF BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


    Original     		PDF TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


    Original     		PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		PDF MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


    Original     		PDF MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698

    pin configuration NPN transistor BD679

    Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


    Original     		PDF BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943

    2N5686 motorola

    Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.


    Original     		PDF 2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    bu806 equivalent

    Abstract: horizontal deflection tda1180 BU806 BU806FI bu807 equivalent
    Text: r z 7 SCS-THOM SON A 7 f G«ra iLiOT i[] es BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter


    OCR Scan     		PDF BU806/FI BU807/FI BU806/807 BU806FI/807FI O-220 ISOWATT220 BU807/FI 500ms bu806 equivalent horizontal deflection tda1180 BU806 BU806FI bu807 equivalent

    using of damper in Horizontal Output Transistor

    Abstract: BU806 bu806f1 Transformer eht horizontal deflection tda1180 TDA1180 equivalent bu806 eht transformer
    Text: i T T SGS-THOMSON 7# « Ic m iC T M * ! BU806/F1 BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS ESCR1PTION he BU806/807 and BU806F1/807FI are silicon pitaxial planar NPN power transistors in Darigton configuration with integrated base-emitter leed-up diode, mounted respectively in T0-220


    OCR Scan     		PDF BU806 BU807/FI BU806/807 BU806F1/807FI T0-220 ISOWATT220 BU806/FI using of damper in Horizontal Output Transistor bu806f1 Transformer eht horizontal deflection tda1180 TDA1180 equivalent bu806 eht transformer

    OC314

    Abstract: No abstract text available
    Text: rz z Ä7 I SGS-TUOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS D E S C R IP T IO N The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220


    OCR Scan     		PDF BU806/FI BU807/FI BU806/807 BU806FI/807FI O-220 ISOWATT220 BU807/FI ISOWATT22Q OC314

    bu806 equivalent

    Abstract: BU806FI EQUIVALENT BU806 TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806
    Text: rrz SGS-THOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in T0-220


    OCR Scan     		PDF BU806 BU807/FI BU806/807 BU806FI/807FI T0-220 ISOWATT220 BU806/FI BU807/FI bu806 equivalent BU806FI EQUIVALENT TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806

    bu806

    Abstract: bu807 "Darlington Transistor"
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS BUILT-IN SPEED -U P Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BU806/807 BU806 BU807 300uS, bu806 "Darlington Transistor"

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF BU806/807 O-220 BU806 BU807 00201bS

    bu806 equivalent

    Abstract: bu806
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BU806/807 O-220 BU806 BU807 300nS, bu806 equivalent bu806

    darlington Vce-200V

    Abstract: circuit of samsung CRT bu806 equivalent C 3311 transistor samsung crt BU806..807 BU407 BU407H BU806 BU807
    Text: SAM S U NG SEMICONDUCTOR INC BU407/407H IME D | 7*11,4145 0 0 0 7 1 ,8 5 S | NPN EPITAXIAL SILICON TRANSISTOR T-33-11 HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characterlstlp Collector-Base Voltage


    OCR Scan     		PDF BU407/407H -65M50 T-33-11 O-220 darlington Vce-200V circuit of samsung CRT bu806 equivalent C 3311 transistor samsung crt BU806..807 BU407 BU407H BU806 BU807

    memoguard

    Abstract: 40LF220 LSH14 RM-601 UB2128 BU-809 RM601 UB2021 LD0500 HC400
    Text: Pow er to d ep en d on Integrity throughout 21 years’ experience in battery technology, manufacturing and marketing has honed a leading edge for Uniross. The com pany policy of supplying reliable, high-quality batteries that are cost effective is an approach that has proved


    OCR Scan     		PDF