Untitled
Abstract: No abstract text available
Text: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input
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bti53T31
BGD885
-SOT11SD
bh53T31
DD3S333
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CQ 419
Abstract: IEC134
Text: OSB 9215 SERIES OSM9215 SERIES OSS 9215 SERIES N AMER P H I L I P S / D I S C R E T E SSE D I bti53‘i3 1 00250=17 7 • 7 ^ 2 2 - 0 7 HIGH-VOLTAGE RECTIFIER STACKS T h e O S B 9 2 1 5 , O S M 9 2 1 5 and O S S 9 2 1 5 series are ranges o f high-voltage re c tifie r assemblies,
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OSM9215
bti53'
OSB9215,
OSS9215
OSB9215
OSS921
CQ 419
IEC134
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PDF
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Thyristor TAG 87
Abstract: thyristor TAG 13
Text: ObE D N AMER PHILIPS/DISCRETE bti53,i31 0011643 b BT153 *s -i3 JK 1 FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a TO-220AB envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator,
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bti53,
BT153
O-220AB
bbS3T31
7Z82059
Thyristor TAG 87
thyristor TAG 13
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1115a
Abstract: ecg circuit schematic 12 lead ecg circuit diagram philips 1115 ECG circuit diagram ECG11ISA ECG1115A circuit diagram of ECG
Text: 17E PHILIPS E C G INC bti53‘i2A 0004502 û ECG1115, ECG1115A ECG Semiconductors AUDIO POWER AMPLIFIER Featurei: • • • • • ECG 1115 THERMAL SHUTDOWN OVERVOLTAGE PROTECTION LOW HARMONIC AND CROSSOVER DISTORTION HIGH CURRENT CAPABILITY 2 .5A SUPPLY VOLTAGE RANGE (4V-20V)
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bti53`
ECG1115,
ECG1115A
V-20V)
1115/1U5A
12-lead
5/1115A
ECG1115A
1115a
ecg circuit schematic
12 lead ecg circuit diagram
philips 1115
ECG circuit diagram
ECG11ISA
circuit diagram of ECG
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PDF
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BYV60
Abstract: No abstract text available
Text: N AMER PHI LI PS/ DI SC RE TE 11 TDD bti53li31 Dm, 03=14 1 D BYV60 SERIES V ô3 - i 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics.
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BYV60
O-238
BVV60-
m1049
bbS3T31
m2213
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PDF
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byx30
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D B ^53=131 0 0 2 2 7 ^ 7 B A _ BYX30 SERIES 7^0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.
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BYX30
BS9333-F002
BYX30-200
BYX30-600
BYX30-200R
BYX30-600R.
D457I
BYX30
bb53T31
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PDF
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SOT-90B
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio
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SL5500
SL5501
SL5511
bbS3T31
00355b?
SOT-90B
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PDF
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TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Abstract: No abstract text available
Text: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121
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TIP125
TIP126
TIP127
TIP120,
TIP121
TIP122.
TIP125
bti53T31
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
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PDF
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7Z66
Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Text: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.
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BYX39
BS9333-F005
BYX39-600
BYX39-1400.
BYX39-600R
BYX39-1400R.
BYX39-
7Z66
BYX39-1400
016T
oowe
BYX39-1400R
IEC134
BYX39 400
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universal laptop schematic power supply circuit diagram
Abstract: P3C18V8Z35A P3C18V8Z35FA P3C18V8Z35N
Text: P3C18V8Z35/P3C18V8ZI 42T 3 VOlt Ze S .'? "db! 'pOWer universal PAL devices SIC3 Product specification • Philips Semiconductors Programmable Logie Devices All the P3C18V8Z devices are available in plastic DIP, PLCC and Plastic Small Outline SOL packages. A ceramic DIP with a
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P3C18V8Z35/P3C18V8ZI
P3C18V8Z
P3C18V8Z35,
P3C18V8ZI.
bti53T24
01D04A
P3C18V8Z35/P3C18V8ZI
universal laptop schematic power supply circuit diagram
P3C18V8Z35A
P3C18V8Z35FA
P3C18V8Z35N
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BGY67
Abstract: DIN45004B
Text: bbSSTBl Philips Sem iconductors 0032353 bfll M A P X Product specification BGY67 CATV amplifier module N APER PHILIPS/DISCRETE P IN N IN G -S O T 1 1 5 C FEATURES PIN • Excellent linearity 1 input • Silicon nitride passivation 2 comm on • Rugged construction
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bbS3T31
BGY67
PINNING-SOT115C
MSB004
-60dB
DIN45004B;
BGY67
DIN45004B
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transistor d 1933
Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Text: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial
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0025T47
PMST4403
OT323
PMST4403
MAM096
transistor d 1933
transistor marking code p2T
VC80
marking code P2T
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transistor IC BT 134
Abstract: sot23 a60 PMBT5551
Text: • bbSBTBl 0D25flô2 atD ■ APX N ANER PHILIPS/DISCRETE PMBT5551 t.7E D _ _ _ _ A_ SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal tran sisto r fo r general purposes and especially te le ph o n y applications and encapsulated in a SO T23 envelope.
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PMBT5551
transistor IC BT 134
sot23 a60
PMBT5551
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PDF
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BUK657-500A
Abstract: BUK657-500B BUK657 BUK657-500C T0220AB buk657-500 r gb 489
Text: N AMER PHILIPS/DISCRETE 5SE D • 0D2071D T ■ PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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fabS3131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
r-39-J3
BUK657
-500A
-500B
-500C
T0220AB
buk657-500
r gb 489
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Untitled
Abstract: No abstract text available
Text: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope
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bb53R31
0D2707D
BZG03
OD106A
DO-214AC
BZG03-C10
BZG03-C270
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Untitled
Abstract: No abstract text available
Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.
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BF980A
CA10S
003ST43
bti53t131
0035T44
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PDF
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Untitled
Abstract: No abstract text available
Text: CNX35U CNX36U CNX39U OPTOCOUPLERS O p tically coupled isolators consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable f o r T T L integrated circuits. Features • • • • High ou tpu t/inpu t D C current transfer ratio
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CNX35U
CNX36U
CNX39U
E90700
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PDF
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Untitled
Abstract: No abstract text available
Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency
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QQE5Q33
BFG541
OT223.
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PDF
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SCN68000C8N64
Abstract: CZ 5.0VDC SCN68000C6A68 DAN-101 SCN68000 S68000 ls- 11m scn680 scn68020 SCN68000C8I64
Text: 2TE D NAPC/ SIGNETICS • b b S 3 T 24 005405=1 T ■ T-V9-V7-/V SCN68000 Signetics 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION PIN CONFIGURATION The SCN68000 is the first implementa tion of the S68000 1 6 /3 2 bit micropro
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SCN68000
16-/32-Bit
SCN68000
S68000
16-bit
24-bit
32-bit
SCN68008
SCN68000C8N64
CZ 5.0VDC
SCN68000C6A68
DAN-101
ls- 11m
scn680
scn68020
SCN68000C8I64
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PDF
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TB531
Abstract: m1573 BYW92 BYW92-50
Text: N AMER P H IL IP S /D IS C R E T E 5SE D • ^53= 131 0U 2577S II MAINTENANCE TYPE y 4 ■ BYW92 SERIES y r - o s - i^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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002577S
ABYW92
BYW92â
M1246
bti53cÃ
BYW92
T-03-19
M1578
bbS3131
TB531
m1573
BYW92-50
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PDF
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ECG1287
Abstract: No abstract text available
Text: _ J_ ’ PHILIPS E C G INC 17E D • bbS3=]£fl □ O O t4flôO S S' EGG ECG1287 Audio Power Amplifier Se m ico n d u cto rs Features • Short circuit protection • Thermal shutdown 14 13 12 II 10 9 8 n n n i-ii-in .280" 7.ll MAX.
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ECG1287
T-74-05-01
ECG1287
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PDF
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BD203
Abstract: bdx77
Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or
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BD201
BD203
BDX77
BD202,
BD204
O-220.
BD203
bdx77
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PDF
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s3331
Abstract: No abstract text available
Text: P h ilip s S em icond uctors Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm minimum • High current transfer ratio and
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SL5582/SL5583
SL5582
SL5583
OT23fication
bbS3T31
D35b03
S3331
003SL04
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PDF
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transistor BD 339
Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
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00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
bb53031
transistor BD 339
transistor BD 341
BB530
-20/transistor BD 341
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