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    BTA65

    Abstract: PSA65
    Text: E E M C O N O U C TO R m MPSA65 BTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 PSA64 BTA65 PSA65

    FAIRCHILD SOT-223 MARK

    Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
    Text: fv* '€2 CZ> T O R BTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / BTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.


    OCR Scan     		PDF MPSA65 MMBTA65 OT-23 PZTA65 OT-223 MPSA64 FAIRCHILD SOT-223 MARK MMBTA65 MPSA65 PZTA65

    Untitled

    Abstract: No abstract text available
    Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 BTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings


    OCR Scan     		PDF MPSA65 MMBTA65 PZTA65 MPSA64 MPSA65 MMBTA65