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    BT 35 F TRANSISTOR Search Results

    BT 35 F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BT 35 F TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Bt 35 transistor

    Abstract: Bt 35 F transistor
    Text: MCC BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT


    Original     		PDF BC847AT, BC857AT OT-523, MIL-STD-202, 150mW OT-523 BC847BT BC847CT 100mA, 100MHz Bt 35 transistor Bt 35 F transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction


    Original     		PDF BC847AT, 150mW BC857AT OT-523 OT-523, MIL-STD-202, BC847BT BC847CT 100MHz 200HZ

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC857AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications


    Original     		PDF BC857AT, -10mA, -10uA,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202,

    Q68000-A4334

    Abstract: No abstract text available
    Text: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP


    OCR Scan     		PDF fi23b3S0 Q68000-A4335 Q68000-A4334 Q68000-A6481 Q68000-A6473 103mA A23b32Q /IF6-10 Q68000-A4334

    siemens 250 87

    Abstract: No abstract text available
    Text: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz


    OCR Scan     		PDF A23b32G 23b320 0G17254 siemens 250 87

    3904S

    Abstract: wi fi marking code transistor HK
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


    OCR Scan     		PDF SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		PDF 68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23

    Untitled

    Abstract: No abstract text available
    Text: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.


    OCR Scan     		PDF PMBT2222 PMBT2222A BT2222_ BT2222A

    HEF4511

    Abstract: HEF4511B HEF4511BD HEF4511BP
    Text: HEF4511B MSI BCD TO 7-SEGMENT LATCH/DECODER/DRIVER The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs D ^ to Dq , an active LOW latch enable input (ID, an active LOW ripple blanking input (BT),an active LOW lamp test input (LT), and seven active HIGH n-p-n bipolar transistor segment outputs (Oa to Og).


    OCR Scan     		PDF HEF4511B 7Z79904 7Z79905 7Z79906 hef4070b HEF4511 HEF4511BD HEF4511BP

    transistor F370

    Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
    Text: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o


    OCR Scan     		PDF 2SC1674 I-125 SC-43 -411l transistor F370 t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674

    BLV95

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile


    OCR Scan     		PDF BLV95 OT-171) BLV95

    Y25n120d

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4


    OCR Scan     		PDF Y25N120D/D Y25n120d

    ITE35C12

    Abstract: ITE35F12
    Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4313-1 ITE35F12/ITE35C12 ITE35X12 37bfi522 ITE35C12 ITE35F12

    BDX45

    Abstract: BDX47 BDX42 BDX43 BDX44 BDX46
    Text: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope w ith collector connected


    OCR Scan     		PDF BDX45 BDX46 BDX47 O-126 BDX42, BDX43 BDX44 BDX45 BDX46 BDX47 BDX42