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    BSS 97 TRANSISTOR Search Results

    BSS 97 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BSS 97 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    transistor DA3 309

    Abstract: BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the


    Original     		PDF TMS320F240 BPRA077 transistor DA3 309 BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240

    schematic diagram UPS inverter three phase

    Abstract: 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TMS320F240 BPRA077 schematic diagram UPS inverter three phase 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram

    transistor DA3 309

    Abstract: SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TMS320F240 BPRA077 transistor DA3 309 SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406

    BSS97

    Abstract: bss 97 transistor BSS 97 Q62702-S463
    Text: S IE M E N S SIPMOS" Small-Signal Transistor VDS /D BSS 97 = 200 V = 1 .5 A ^DS on = 2 .0 Q • N channel • Enhancement mode • Package: T O -202’ ) Type Ordering code for version in bulk BSS 97 Q62702-S463 Maximum Ratings Parameter Symbol Values Unit


    OCR Scan     		PDF Q62702-S463 BSS97 bss 97 transistor BSS 97 Q62702-S463

    BSS97

    Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
    Text: SIEMENS SIPMOS Small-Signal Transistor VDS I D = 200 V = 1 .5 A ^ D S o n • • • BSS 97 = 2.0 Q N channel Enhancement mode Package: TO-202 ’ > Not for new design! Type O rdering code for version in bulk • BSS 97 Q 62702-S463 Maxim um Ratings


    OCR Scan     		PDF O-202' GPT05576 62702-S463 SIK02261 a23SbOS BSS97 BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss

    bss 97 transistor

    Abstract: ss 297 transistor
    Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package


    OCR Scan     		PDF Q67000-S118 Q67000-S292 E6288 E6325 bss 97 transistor ss 297 transistor

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


    OCR Scan     		PDF 023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components

    marking FJs

    Abstract: BSS88
    Text: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type BSS 88 ^DS 240 V Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 h 0.25 A ffDS(on) 8& Package Marking


    OCR Scan     		PDF Q62702-S287 Q62702-S303 Q62702-S576 E6296 E6325 BSS88 marking FJs BSS88

    Q62702-S217

    Abstract: bss296
    Text: SIEMENS BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Pin 1 Pin 2 D G Type BSS 296 Vds 100 V Type BSS 296 Ordering Code Q62702-S217 0.8 A ffDS(on) 0.8 Û Pin 3 Package Marking TO-92 SS 296


    OCR Scan     		PDF Q62702-S217 E6296 BSS296 Q62702-S217 bss296

    bs33

    Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
    Text: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70


    OCR Scan     		PDF BS33A BFR20 BFR21 BFX39 100TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bs33 35-130 BSS 130 BSS 97 BFX95A BFY56

    BFX97A

    Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
    Text: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30


    OCR Scan     		PDF ES33A BFR11 BFX94A BFX95A BFX96A BFX97A OTO-39 15/2N 16/2N BFR20 BFR21 BFX39 BSX19 bsx30

    siemens igbt BSM 25GD 100D

    Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
    Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11


    OCR Scan     		PDF O-220AB O-220 2x100 2x150 100GAL siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    bss17

    Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97

    nos0610

    Abstract: NDF0610 NDS0610
    Text: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDF0610 NDS0610 180mA OT-23 nos0610 NDS0610

    relais datenbuch siemens

    Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
    Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8


    OCR Scan     		PDF BRT12H BRT12M relais datenbuch siemens siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch

    Untitled

    Abstract: No abstract text available
    Text: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDF0610 NDS0610 180mA OT-23) NDF0610 NDS061

    re 10019

    Abstract: 10019
    Text: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum


    OCR Scan     		PDF P5276 P4917-ND ber1997 re 10019 10019

    UOJ 220

    Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
    Text: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90


    OCR Scan     		PDF T0-18 BFR16 NPNTO-39 UOJ 220 BFR18 bfx74a BFW43 BFW44 BFX38 BFX39 BFX40 BFX41

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D


    OCR Scan     		PDF Q67000-S076

    S3V 82

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A


    OCR Scan     		PDF 55M42D0 0DDD52b D-0777 D-0777 2285C S3V 82

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    litton

    Abstract: Litton Solid State D-0777 ultra low noise 12GHz radar 77 ghz receiver
    Text: LITT ON I N D / LI TT ON SOLID SbE D S5 4 M B 0 Q 0[][]055b 04fi « L I T T Litton Ultra Low-Noise M ic ro w a v e G aA s FET Electron Devices D-0777 Preliminary Specifications 440 FEATURES 280 • Noise Figure 1.9 dB @ < 46 I 18 g h z Y77A ■ Gain at NF 8 dB @ 18 GHz


    OCR Scan     		PDF S54MB0Q D-0777 D-0777 2285C litton Litton Solid State ultra low noise 12GHz radar 77 ghz receiver