BSO080P03NS3 Search Results
BSO080P03NS3 Price and Stock
Infineon Technologies AG BSO080P03NS3GXUMA1MOSFET P-CH 30V 12A 8DSO |
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BSO080P03NS3GXUMA1 | Reel |
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BSO080P03NS3GXUMA1 | 143 Weeks | 2,500 |
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Infineon Technologies AG BSO080P03NS3EGXUMA1MOSFET P-CH 30V 12A 8DSO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSO080P03NS3EGXUMA1 | Reel |
|
Buy Now | |||||||
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BSO080P03NS3EGXUMA1 | 5,850 | 649 |
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BSO080P03NS3EGXUMA1 | 5,850 | 1 |
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BSO080P03NS3EGXUMA1 | 56 |
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BSO080P03NS3EGXUMA1 | 143 Weeks | 2,500 |
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Buy Now |
BSO080P03NS3 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BSO080P03NS3E G |
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P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; | Original | |||
BSO080P03NS3EGXUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12A 8DSO | Original | |||
BSO080P03NS3 G |
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P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; | Original | |||
BSO080P03NS3GXUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12A 8DSO | Original |
BSO080P03NS3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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D148
Abstract: JESD22-A114 080P3NSE
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BSO080P03NS3E 080P3NSE D148 JESD22-A114 080P3NSE | |
IEC61249-2-21
Abstract: JESD22-A114
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BSO080P03NS3E IEC61249-2-21 080P3NSE IEC61249-2-21 JESD22-A114 | |
IEC61249-2-21
Abstract: JESD22-A114
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BSO080P03NS3 IEC61249-2-21 080P3NS IEC61249-2-21 JESD22-A114 | |
JESD22-A114Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A |
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BSO080P03NS3 080P3NS JESD22-A114 | |
080P3NS
Abstract: GS-10
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BSO080P03NS3 IEC61249-2-21 080P3NS 080P3NS GS-10 | |
JESD22-A114Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A |
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BSO080P03NS3E 080P3NSE JESD22-A114 | |
JESD22-A114
Abstract: d148
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BSO080P03NS3 080P3NS JESD22-A114 d148 | |
Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 m9 VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications |
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BSO080P03NS3 IEC61249-2-21 080P3NS | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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