Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BS616UV2011TC Search Results

    BS616UV2011TC Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616UV2011TC Brilliance Semiconductor 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16-Bit switchable Original PDF
    BS616UV2011TC Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616UV2011TC-10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616UV2011TC-70 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF

    BS616UV2011TC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSOP1-48

    Abstract: BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP2-44
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current


    Original     		100ns x8/x16 R0201-BS616UV2011 BS616UV2011 TSOP1-48 BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP2-44 PDF

    BGA-48-0608

    Abstract: BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current


    Original     		100ns x8/x16 R0201-BS616UV2011 BS616UV2011 BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44 PDF

    BGA-48-0608

    Abstract: BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES BS616UV2011 „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current


    Original     		BS616UV2011 120ns 150ns x8/x16 TSOP1-48PIN R0201-BS616UV2011 BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44 PDF