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    BS616LV4021BC Search Results

    BS616LV4021BC Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV4021BC Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF
    BS616LV4021BC-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF
    BS616LV4021BC-100 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable Original PDF
    BS616LV4021BC-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable Original PDF

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    BS616LV4021

    Abstract: BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4021 100ns R0201-BS616LV4021 -40oC 8x10mm) BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI

    BS616LV4021

    Abstract: BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4021 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4021 100ns R0201-BS616LV4021 BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI