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    BS616LV2025AI Search Results

    BS616LV2025AI Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2025AI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Original PDF
    BS616LV2025AI-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256k x 8 bit switchable Original PDF
    BS616LV2025AI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256k x 8 bit switchable Original PDF

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    BGA-48-0608

    Abstract: BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2025 „ DESCRIPTION „ FEATURES • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA Max. operating current I -grade: 45mA (Max.) operating current


    Original     		PDF BS616LV2025 x8/x16 BS616LV2025 R0201-BS616LV2025 BGA-48-0608 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI

    BGA-48-0608

    Abstract: BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2025 „ FEATURES „ DESCRIPTION • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA Max. operating current I -grade: 45mA (Max.) operating current


    Original     		PDF BS616LV2025 x8/x16 BS616LV2025 R0201-BS616LV2025 -40oC BGA-48-0608 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2025 „ FEATURES „ DESCRIPTION • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 40mA Max. operating current I -grade: 45mA (Max.) operating current


    Original     		PDF BS616LV2025 x8/x16 BS616LV2025 R0201-BS616LV2025