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    BS616LV2020DI Search Results

    BS616LV2020DI Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2020DI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Original PDF
    BS616LV2020DI-10 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V Supply, Industrial, Die, -Pin Original PDF
    BS616LV2020DI-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM Original PDF
    BS616LV2020DI-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V Supply, Industrial, Die, -Pin Original PDF
    BS616LV2020DI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM Original PDF

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    BGA-48-0608

    Abstract: BS616LV2020 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2020 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current


    Original     		PDF BS616LV2020 100ns x8/x16 BS616LV2020 -40oC R0201-BS616LV2020 BGA-48-0608 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI

    BGA-48-0608

    Abstract: BS616LV2020 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2020 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current


    Original     		PDF BS616LV2020 100ns x8/x16 BS616LV2020 R0201-BS616LV2020 -40oC BGA-48-0608 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI