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    BS616LV2018DI Search Results

    BS616LV2018DI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2018DI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2018DI-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V Supply, Industrial, Die, 48-Pin Original PDF

    BS616LV2018DI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BGA-48-0608

    Abstract: BS616LV2018 BS616LV2018AC BS616LV2018AI BS616LV2018DC BS616LV2018DI BS616LV2018TC BS616LV2018TI TSOP1-48
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2018 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 16mA Max. operating current I -grade: 20mA (Max.) operating current


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    BS616LV2018 x8/x16 BS616LV2018 TSOP1-48PIN R0201-BS616LV2018 BGA-48-0608 BS616LV2018AC BS616LV2018AI BS616LV2018DC BS616LV2018DI BS616LV2018TC BS616LV2018TI TSOP1-48 PDF

    BGA-48-0608

    Abstract: BS616LV2018 BS616LV2018AC BS616LV2018AI BS616LV2018DC BS616LV2018DI BS616LV2018TC BS616LV2018TI TSOP1-48
    Text: Very Low Power/Voltage CMOS SRAM 128K X 16 bit BSI BS616LV2018 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 16mA Max. operating current I -grade: 20mA (Max.) operating current


    Original
    BS616LV2018 x8/x16 BS616LV2018 R0201-BS616LV2018 BGA-48-0608 BS616LV2018AC BS616LV2018AI BS616LV2018DC BS616LV2018DI BS616LV2018TC BS616LV2018TI TSOP1-48 PDF

    BS616LV2018EI

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2018 „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 29mA @55ns operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current


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    BS616LV2018 x8/x16 BS616LV2018 R0201-BS616LV2018 TSOP2-44 BS616LV2018EI PDF