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    BS616LV2013AI Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2013AI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2013AI-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2013AI-10 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V Supply, Industrial, BGA, 48-Pin Original PDF
    BS616LV2013AI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2013AI-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V Supply, Industrial, BGA, 48-Pin Original PDF

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    BS616LV2013

    Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
    Text: Very Low Power/Voltage CMOS SRAM 128K X 16 bit B SI „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		PDF 100ns x8/x16 BS616LV2013 R0201-BS616LV2013 BS616LV2013 BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44

    BS616LV2013

    Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
    Text: Very Low Power/Voltage CMOS SRAM 128K X 16 bit BSI „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		PDF 100ns x8/x16 BS616LV2013 performS616LV2013 R0201-BS616LV2013 BS616LV2013 BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44

    BS616LV2013

    Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2013 „ DESCRIPTION „ FEATURES The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage.


    Original     		PDF BS616LV2013 BS616LV2013 BS616LV202 TSOP1-48PIN R0201-BS616LV2013 BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44