BR-C 3A Search Results

Contextual Info: •Cylindrical Type Lithium Batteries Bare cell BR-C BR-A BR-2/3A BR-2/3A Lithium Battery Model Number Specifications Nominal Voltage V Nominal Capacity(mAh) Tab configuration Page/Fig No. BR-CT2P 3 5,000 Tab (12mm) 4 /No.1 BR-CC7P 3 5,000 Connecter 4 /No.2

TS16949

Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

ZXTN2

Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

ZXTN25060BFH

Abstract: ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

Contextual Info: Poly-carbonmonofluoride Lithium Batteries: Individual Specifications BR-1/2AA BR-2/3A Dimensions mm Dimensions(mm) Weight:13.5g Weight:13.5g Specification Specification Nominal voltage (V) 3 Nominal capacity (mAh) 1,000 Continuous standard load (mA) 2.5 Operating temperature (C)

TS16949

Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN2020F ZXTP2029F ZXTP2029FTA
Contextual Info: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

CD4016BEX

Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
Contextual Info: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1000100

Contextual Info: N O TES; 1 M ATER IALS: HOUSING: P A46 FIL LE D BLACK, U L94V-0 TERMINAL: BR ASS BOARD RETENTION C LIP: BR ASS 2) FIN ISH ES: TERMINAL: 1 = TIN OVER NICKEL: TH IC KN ESS = 0.00254/1.000100) MINIMUM. 2 = GOLD OVER NICKEL: TH IC KNESS = .0 0 0 7 6 / 0 .0 0 0 0 3 0 ) MINIMUM.

transistor BD245

Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C

Contextual Info: RELIABILITY REPORT DATE : 3/04/05 QUALITY ENG : PART NUMBER : Dinh Pham MIC37300/37301/37302/37501/37502 PROJECT # : PACKAGE TYPE : ASSEMBLY LOC D/C # LOT # FAB # M/C PROCESS 21122-1 MIC37301BR SPAK-5L BR CARSEM 0142 531156-7 Fortune KMC289 BCDM 21147-1 MIC37302BR

PLH20H

Contextual Info: A C COMPONENTS NOISE FILTERS A C C O M M O N M O DE CHOKE C O IL/BR O AD BAND in ii f?at a PLH Series FEATURES • Excellent noise suppression achieved by combining the best characteristics of conventional bobbin and toroidal types. ■ Assembled with three-terminal AC line capacitor DSR Series,

2SD613 equivalent

Abstract: 2SD613 2SB633
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c

2SK531

Contextual Info: o lilSŒX'i o o -&- ÿ K 7 -Í • ip-tì: : mm DC-DC 10.3 MAX. Ä ÜSftEE-e-j-0 : v br dss 03.2±O.Z = 450 V : |Yfs |=2.5S ( Sfl) ( ID = 3A) : iass=±ioonA c m * ) c vos= ± 2 ov) • I I I ^ ^ ß Ä T K i tl/x.ifi'&V'o • IDSS= lmA CMie ) ( VDS= 450 V )

BC859B 215

Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)

circuit diagram of MOD 100 counter using ic 7490

Abstract: circuit diagram of MOD 8 counter using ic 7490 12 hour digital clock using 7490 ic 7490 pin diagram decade counter mod 8 ring counter using JK flip flop mod 5 ring counter using JK flip flop circuit diagram of MOD 12 counter using ic 7490 mod 4 ring counter using JK flip flop signetics SE180 4 bit gray code synchronous counter wiring diagram using jk
Contextual Info: DESIGNING WITH MSI [ilVol.l COUNTERS AND SHIFT 1 DESIGNING WITH MSI VOL. I COUNTERS AND SHIFT REGISTERS W ritten by LES BR O C K C opyright 1970 Signetics C orporation TABLE OF CONTENTS SECTION I II T IT L E PAGE AN IN T R O D U C T IO N TO D ES IG N IN G W ITH M S I .

Contextual Info: J.S.IIS.LIt/ <3z.mi-L-onau.ctoi C/ , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1067 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-120V(Min.)

LT1019-10

Abstract: LT1019-5
Contextual Info: REVISIONS LTR DESCRIPTION DATE YH-MO-DA APPROVED REV SHEET REV SH EET REV STATUS OF SHEETS REV SHEET PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CW UE FC C C KK FaDk BR YV THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: , Line. ,j CX LJ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUY78 Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=300V(Min.) • Low Collector-Emitter Saturation Voltage:V C E(s at )=1.4V(Max.)@l c =5A

Contextual Info: , One. J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1068 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.) • Good Linearity of hFE

Contextual Info: PDR3G 3A GLASS PASSIVATED RECTIFIER PowerDI 0/o5 Features X G la s s P as s iv a te d Die C o n s tru c tio n X Low L e a k a g e C u rre n t X H igh F o rw a rd S u rg e C u rre n t C a p a b ility X Lead Free Finish, R oH S C o m p lia n t N ote 1 X "G re e n " M o ld in g C o m p o u n d (N o Br, Sb)