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    BR 5807 Search Results

    BR 5807 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XAL1580-741MEB Coilcraft Inc General Purpose Inductor, 0.74uH, 20%, 1 Element, Composite-Core, SMD, 6359, CHIP, 6359, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    XAL1580-741MED Coilcraft Inc General Purpose Inductor, 0.74uH, 20%, 1 Element, Composite-Core, SMD, 6359, CHIP, 6359, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    XAL1580-741 Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    XAL1580-741ME Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    10158070-102LF Amphenol Communications Solutions Minitek®Pwr 5.7 Connector System, Receptacle Terminal, High Conductivity copper Alloy, 30u\\ Gold plating, AWG(#12). Visit Amphenol Communications Solutions

    BR 5807 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight DC Motor Control


    Original     		NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G qt912 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 JANHCE and JANKCE JANHCF and JANKCF FEATURES: • Chip Outline Dimensions: 68 x 68 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum


    Original     		1N5807 1N5809 1N5811 Gold-3000Ë JANHCE1N5807 JANHCE1N5809 MIL-PRF-19500/477C PDF

    v5807

    Abstract: mil-prf-19500/477 MIL-S-19500/477 1N5811 1N5807 1N5809 JANHCE1N58011 JANHCE1N5807 JANHCE1N5809 JANKCE1N58011
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 JANHCE and JANKCE JANHCF and JANKCF FEATURES: • Chip Outline Dimensions: 68 x 68 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum


    Original     		1N5807 1N5809 1N5811 Gold-3000Ã JANHCE1N5807 JANHCE1N5809 JANHCE1N58011 JANKCE1N5807 v5807 mil-prf-19500/477 MIL-S-19500/477 1N5811 1N5807 1N5809 JANHCE1N58011 JANHCE1N5807 JANHCE1N5809 JANKCE1N58011 PDF

    ta 6203

    Abstract: CPH6103 CPH6203 58071
    Text: 注文コードNo.N5 8 0 7 No. N 5 8 0 7 63099 新 PNP/NPNエピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・DC-DCコンバータ, リレードライブ, ランプドライブ, モータドライブ, ストロボ


    Original     		CPH6103 CPH6203 600mm 100mA 63099TS TA-1950 CPH6103, 10IB1 -10IB2 ta 6203 CPH6103 CPH6203 58071 PDF

    CPH6103

    Abstract: No abstract text available
    Text: Ordering number:ENN5807 PNP/NPN Epitaxial Planar Silicon Transistors CPH6103/CPH6203 High-Current Switching Applications Applications Package Dimensions • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2146A [CPH6103/6203] 0.15


    Original     		ENN5807 CPH6103/CPH6203 CPH6103/6203] CPH6103 PDF

    CPH6103

    Abstract: No abstract text available
    Text: Ordering number:ENN5807 PNP/NPN Epitaxial Planar Silicon Transistors CPH6103/CPH6203 High-Current Switching Applications Applications Package Dimensions • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2146A [CPH6103/6203] 0.15


    Original     		ENN5807 CPH6103/CPH6203 CPH6103/6203] CPH6103 PDF

    5d 3kv

    Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
    Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage


    Original     		REV9111 PD-DB-0409 5d 3kv equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F PDF

    369D

    Abstract: No abstract text available
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original     		NTD5807N NTD5807N/D 369D PDF

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original     		NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G C3129 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		NTD5807N, NVD5807N NTD5807N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		NTD5807N, NVD5807N NTD5807N/D PDF

    NVD5807NT4G

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		NTD5807N, NVD5807N AEC-Q101 NTD5807N/D NVD5807NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification


    Original     		NTD5807N NTD5807N/D PDF

    Eyf 06 ROE

    Abstract: 12V DC to 24V dC converter schematic diagram 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM ROE capacitor EYF schematic diagram converter input 24v to 12v Power Factor corrector L4981 SCHEMATIC DIAGRAM OF POWER factor corrector capacitor 3300uf 63v schematic diagram converter input 12v to output 2 DZ18V
    Text: APPLICATION NOTE P.F.C. APPLICATION IDEAS USING MAINS TRANSFORMER The typical PFC boost scheme is mainly suggested for off-line applications, with the galvanic insulation located in the downstream converter side. There are some industrial and consumer applications in which the galvanic insulation is provided by


    Original     		PDF

    SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A

    Abstract: 12V DC to 24V dC converter schematic diagram schematic diagram converter input 24v to 12v SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A ROE capacitor 220 schematic diagram converter 12v to 24v ROE ELECTROLYTIC CAPACITOR 220VAC to 24Vac transformer ROE capacitor EYF roe EYF
    Text: AN825 APPLICATION NOTE  P.F.C. APPLICATION IDEAS USING MAINS TRANSFORMER The typical PFC boost scheme is mainly suggested for off-line applications, with the galvanic insulation located in the downstream converter side. There are some industrial and consumer applications in which the galvanic insulation is provided by


    Original     		AN825 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A 12V DC to 24V dC converter schematic diagram schematic diagram converter input 24v to 12v SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A ROE capacitor 220 schematic diagram converter 12v to 24v ROE ELECTROLYTIC CAPACITOR 220VAC to 24Vac transformer ROE capacitor EYF roe EYF PDF

    12v 120W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A diagram Converter 24V to 12V SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A schematic diagram converter input 24v to 12v 24v, 5A transformer 220VAC to 24Vac transformer schematic diagram AC to DC converter high output schematic diagram dc-dc L4970
    Text: APPLICATION NOTE P.F.C. APPLICATION IDEAS USING MAINS TRANSFORMER The typical PFC boost scheme is mainly suggested for off-line applications, with the galvanic insulation located in the downstream converter side. There are some industrial and consumer applications in which the galvanic insulation is provided by


    Original     		PDF

    12V DC to 24V dC converter schematic diagram

    Abstract: diagram Converter 24v to 12v 220VAC to 24Vac transformer schematic diagram converter input 24v to 12v MP1830 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A ROE capacitor 220 transformer 220 12v L4970 schematic diagram AC to DC converter high output
    Text: AN825 APPLICATION NOTE P.F.C. APPLICATION IDEAS USING MAINS TRANSFORMER The typical PFC boost scheme is mainly suggested for off-line applications, with the galvanic insulation located in the downstream converter side. There are some industrial and consumer applications in which the galvanic insulation is provided by


    Original     		AN825 12V DC to 24V dC converter schematic diagram diagram Converter 24v to 12v 220VAC to 24Vac transformer schematic diagram converter input 24v to 12v MP1830 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A ROE capacitor 220 transformer 220 12v L4970 schematic diagram AC to DC converter high output PDF

    SK100 transistor

    Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
    Text: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14


    Original     		XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 SK100 transistor C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100 PDF

    PD70F3747

    Abstract: uPD70F3747 uPD70F3750 uPD70F3752 uPD70F3755 uPD70F3757
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		V850ES/Hx3 PD70F3747 PD70F3750 PD70F3752 PD70F3755 PD70F3757 U19304JJ1V0AN001 U19304JJ1V0AN 74HCT573A PD70F3747 uPD70F3747 uPD70F3750 uPD70F3752 uPD70F3755 uPD70F3757 PDF

    D70F3385

    Abstract: D70F3380 PD70F3380 D70F3 D70F36 D70F3377 D70F3379 D70F3370 D70F3375 D70F3376
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		V850ES/Fx3, V850ES/Fx3-L V850ES/FJ3: V850ES/FE3: PD70F3370A PD70F3378 PD70F3371 PD70F3379 PD70F3380 V850ES/FF3: D70F3385 D70F3380 PD70F3380 D70F3 D70F36 D70F3377 D70F3379 D70F3370 D70F3375 D70F3376 PDF

    D1809

    Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
    Text: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000


    OCR Scan     		0DQ2170 D1809 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N PDF

    1N589

    Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
    Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993


    OCR Scan     		GD0D12S 003S612 ml-S-19S00/477b n1l-s-19s00/477a 1n58q2, 1ns804, 1ns806, 1ns807, 1h5809, 1ns811, 1N589 IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 S G S -T H O M S O N L4977A 7A SWITCHING REGULATOR 7A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA­ TION INTERNAL CURRENT LIMITING PRECISE 5.1 V ± 2% ON CHIP REFERENCE RESET AND POWER FAIL FUNCTIONS


    OCR Scan     		L4977A 500KHz L4977A Multiwatt15V M91LJ9P7-09 77B71-A7 779B3-A? PDF

    transistor f131

    Abstract: L4970 I10H
    Text: /= T * 7 / S G S -T H O M S O N H d g M K i 5 L4970A 10A SW ITCHING REGULATOR 10A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA­ TION INTERNAL CURRENT LIMITING PRECISE 5.1 V ± 2% ON CHIP REFERENCE


    OCR Scan     		L4970A 500KHz ver970A i-35U L4970A/77A/75A L4974A/72A H91L4970-45 transistor f131 L4970 I10H PDF