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    se617

    Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
    Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents


    Original     		A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442 PDF

    se617

    Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
    Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the


    Original     		A13826EJ7V0DM00 A13826EJ7V0DM se617 vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883 PDF

    hy528

    Abstract: B5-190 bn2u HY528100
    Text: •HYUNDAI HY5ZB1DD Series 12BK»B-b!t CMOS SRAM DESCRIPTION TTie HYB2S1D0 is a high-speed, low poWBr and 131,072 x B-bils CMOS sialic RAM fabricatad using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY62B1DQ 70/B5/1D0/1Z0ns 1DD01-11-MAY94 HY52B1 HY62B100P HYBZ01 HYBZ01OOLLP HYB281 HY62B100LG HY5201DOLLG hy528 B5-190 bn2u HY528100 PDF