BM1004 Search Results

Contextual Info: ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU BM100476RL-9 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY D e cem b er, 1988 Edition 1.0 The Fujitsu M BM 100476RL-9 is fully d eco ded 4 0 9 6 -b lt ECL s e lf-tim e d re a d /w rite random acce ss m e m o ry S T R A M . The device Is organtaed as 1024 w ords by 4 bits,

MBM10470

Abstract: 24-PIN
Contextual Info: £ j D tv ic * Technology Organization V 7072E Aecaaa Tim a max Pow ar Supply Volta Maximum Pow er D fttlp iU o n with Typical Powar Supply Package ecl 256 x 4 125 nS +5.2 1040 m W 22-pin {I] IJ -M 10415AH ECL 1K x 20 nS - 5 .2 780 mW 16-pin &-7 H ECL 256 x 4

bm1004

Contextual Info: FU JIT SU ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY BM100476LL-9 Decem ber, 1988 Edition 2.0 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY The Fujitsu M B M 100476LL-9 Is fully decoded 4096-b lt EC L self-tim ed read/w rlte random access m em ory S TR A M . The device Is organized as 1024 words by 4 bits,

Contextual Info: F U J IT S U ECL 16384-BIT BIPO LA R R A N D O M ACCESS MEMORY BM100480A-8 M ay 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY T h e Fujitsu M B M 1 0 0 4 8 0 A Is a fully d e c o d e d 16384-bit E C L re a d /w rite ra n d o m a c c e s s m e m o ry d e sig n e d fo r m a in m e m o ry , c o n tro l and b u ffe r sto ra g e a p p lica tio n s. Th is d e vice

Contextual Info: FUJITSU M ICROELECTRONICS. INC. ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY PRELIMINARY Note: T h b la Not m AfUit i: S o m e p m a t t r it U n ita i n M b j t d lo ok — 9e . DESCRIPTION Oxide and Polysilicon process­ ing. As a result, very fast access

Contextual Info: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FU JITSU M BM 100484A-10 Augu st 1 9 6 8 E d i t i o n 2 .0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY T h e F u jits u M B M 1 0 0 4 8 4 A is f u lly d e co d e d 1 6 3 8 4 -b it E C L r e a d /w r ite ra n d o m