BJT IC VCE 5V Search Results

BJT IC VCE 5V Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL1G07FU	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC

BJT IC VCE 5V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage	Original	PDF	AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
Untitled Abstract: No abstract text available Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and	Original	PDF	iW1816 64kHz 230VAC
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM202MN KSD-T6T001-002
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM202MN KSD-T6T001-001
Untitled Abstract: No abstract text available Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM201MN KSD-T6T002-001
power BJT 1000 volt vce Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage	Original	PDF	OT223 150mA FZT560 27-Jun-2011 power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
12V 10A BJT Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM202MN KSD-T6T001-001 12V 10A BJT Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM202MN KSD-T6T001-001
Logic Level Gate Drive mosfet Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
Untitled Abstract: No abstract text available Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	PDF	SUM201MN KSD-T6T002-000
B560 transistor Abstract: transistor b560 bjt 100 bjt ce amplifier bjt ce amplifier application input output bjt npn transistor UC3550-XX b560 equivalent Power Filter Oscilator transistor BJT Driver Text: UNISONIC TECHNOLOGIES CO., LTD UC3550 CMOS IC PWM CONTROLLED， PWM/PFM SWITCHABLE STEP-UP DC-DC CONTROLLER 3 2 1 DESCRIPTION The UTC UC3550 series is a compact, high efficiency, step-up DC/DC controllers includes an error amplifier, oscillator, PWM comparator, skip cycle comparator, voltage reference, soft-start,	Original	PDF	UC3550 UC3550 QW-R502-082 B560 transistor transistor b560 bjt 100 bjt ce amplifier bjt ce amplifier application input output bjt npn transistor UC3550-XX b560 equivalent Power Filter Oscilator transistor BJT Driver
transistor 2sc5353 Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000	Original	PDF	DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
BYT12-1000 Abstract: GTO triac power IGBT MOSFET transistor GTO SCR di IR thyristor manual IR thyristor manual ST GTO thyristor driver power IGBT MOSFET GTO SCR diode power bjt advantages and disadvantages GTO thyristor Application notes Semiconductor Group igbt Text: APPLICATION NOTE CHARACTERISTICS OF POWER SEMICONDUCTORS by J. M. Peter ABSTRACT Advantages and disadvantages are summarised, and the relative cost of each solution indicated. This paper aims to give a brief overview of the essential characteristics of power semiconductors,	Original	PDF
TRANSISTORS BJT list Abstract: bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803 MAX16803ATE Text: 19-0828; Rev 0; 5/07 MAX16803EVKIT+BJT Evaluation Kit+ The MAX16803EVKIT+BJT EV kit demonstrates a high-current LED driver with accurate current control based on the MAX16803 current regulator. This EV kit is capable of supplying regulated LED currents of up to	Original	PDF	MAX16803EVKIT MAX16803 MAX16803 TRANSISTORS BJT list bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803ATE

mosfet to ignition coil Abstract: SCHEMATIC IGNITION WITH IGBTS CAR IGNITION WITH IGBTS STGP10N50L SCHEMATIC IGNITION iGBT automotive ignition coil on plug hall switch ignition ignition IGBTS automotive ignition igbt ignition Text:  APPLICATION NOTE CAR IGNITION WITH IGBTS by M. Melito ABSTRACT IGBTs are used in a variety of switching applications thanks to their attractive characteristics, particularly their peak current capability, ruggedness and simple gate drive requirements. Until recently their use was	Original	PDF	AN484/1293 mosfet to ignition coil SCHEMATIC IGNITION WITH IGBTS CAR IGNITION WITH IGBTS STGP10N50L SCHEMATIC IGNITION iGBT automotive ignition coil on plug hall switch ignition ignition IGBTS automotive ignition igbt ignition
SCHEMATIC IGNITION WITH IGBTS Abstract: mosfet to ignition coil CAR IGNITION WITH IGBTS SCHEMATIC IGNITION iGBT automotive ignition automotive ignition coil on plug Electronic car ignition circuit transistor Electronic Ignition Application note STGP10N50L NMOS Transistor KA Text: APPLICATION NOTE CAR IGNITION WITH IGBTS by M. Melito ABSTRACT IGBTs are used in a variety of switching applications thanks to their attractive characteristics, particularly their peak current capability, ruggedness and simple gate drive requirements. Until recently their use was	Original	PDF	AN484/1293 SCHEMATIC IGNITION WITH IGBTS mosfet to ignition coil CAR IGNITION WITH IGBTS SCHEMATIC IGNITION iGBT automotive ignition automotive ignition coil on plug Electronic car ignition circuit transistor Electronic Ignition Application note STGP10N50L NMOS Transistor KA
HFA3134 Abstract: npn 8 transistor array Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	PDF	HFA3134 MM3134 HFA3134, npn 8 transistor array
BJT IC Vce Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	PDF	HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
BJT IC Vce Abstract: npn spice model This application note describes the SPICE transistor model HFA3134 Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 [ /Title MM3 134 /Subject (HFA3 134 8.5GH z NPN Matche d Transistor Pair SPICE Model) /Autho r () /Keywords (Intersil Corporation, semiconductor, ) /Creator () /DOCI NFO MM3134 Introduction	Original	PDF	HFA3134 MM3134 HFA3134, BJT IC Vce npn spice model This application note describes the SPICE transistor model
BJT 2n3904 Abstract: transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1 Text: AN-003 Global Mixed-mode Technology Inc. Application Note 12V Fan Speed Controlling and Driving with G760A or G768B Introduction As the development of the technology, many electronic products have strong computing power. Because that the high computing power IC usually need more electricity, the chip will be getting hotter and hotter	Original	PDF	AN-003 G760A G768B BJT 2n3904 transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1
opto 22 cjc Abstract: E6881 L 26400 IC Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE	OCR Scan	PDF	NE688 uE68839-T1 NE68839R-T1 24-Hour opto 22 cjc E6881 L 26400 IC
transistor 131-6 Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm Text: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area	OCR Scan	PDF	300Z-120 E82988 Tj-125Â transistor 131-6 JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
KF 35 transistor Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500 Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications	OCR Scan	PDF	D11500-050 E82988 50A///S KF 35 transistor power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
FUJI 1DI 300 Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt Text: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - \| a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area	OCR Scan	PDF	300Z-100 -300A FUJI 1DI 300 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt

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BJT IC VCE 5V Search Results

BJT IC VCE 5V Result Highlights (5)

BJT IC VCE 5V Datasheets Context Search

"CHAPTER 1 Introduction to Power Semiconductors"

Untitled

Untitled

Untitled

Untitled

power BJT 1000 volt vce

12V 10A BJT

Untitled

Logic Level Gate Drive mosfet

Untitled

B560 transistor

transistor 2sc5353

BYT12-1000

TRANSISTORS BJT list

mosfet to ignition coil

SCHEMATIC IGNITION WITH IGBTS

HFA3134

BJT IC Vce

BJT IC Vce

BJT 2n3904

opto 22 cjc

transistor 131-6

KF 35 transistor

FUJI 1DI 300