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    3A500 Search Results

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    3A500 Price and Stock

    Maxecho Technologies Corp EBMS060303A500

    FERRITE BEAD 50 OHM 0603 1LN
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    DigiKey EBMS060303A500 Digi-Reel 15,000 1
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    EBMS060303A500 Cut Tape 15,000 1
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    EBMS060303A500 Reel 15,000 15,000
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    Broadcom Limited HCPL-063A-500E

    OPTOISO 3.75KV 2CH OPEN COLL 8SO
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    DigiKey HCPL-063A-500E Cut Tape 4,843 1
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    HCPL-063A-500E Digi-Reel 4,843 1
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    HCPL-063A-500E Reel 4,500 1,500
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    Mouser Electronics HCPL-063A-500E 8,187
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    Newark HCPL-063A-500E Reel 1,500 1,500
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    Ameya Holding Limited HCPL-063A-500E 35
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    EBV Elektronik HCPL-063A-500E 16 Weeks 1,500
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    Win Source Electronics HCPL-063A-500E 14,280
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    Broadcom Limited HCPL-073A-500E

    OPTOISOLTR 3.75KV 2CH DARL 8-SO
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    DigiKey HCPL-073A-500E Digi-Reel 2,869 1
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    HCPL-073A-500E Cut Tape 2,869 1
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    HCPL-073A-500E Reel 1,500 1,500
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    Avnet Americas HCPL-073A-500E Reel 9,000 14 Weeks 1,500
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    Mouser Electronics HCPL-073A-500E 32,983
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    EBV Elektronik HCPL-073A-500E 16 Weeks 1,500
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    Broadcom Limited HCPL-263A-500E

    OPTOISO 3.75KV OPEN COLL 8DIP GW
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    DigiKey HCPL-263A-500E Reel 2,000 1,000
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    EBV Elektronik HCPL-263A-500E 16 Weeks 1,000
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    Bourns Inc PVG3A500C01R00

    TRIMMER 50 OHM 0.25W J LEAD TOP
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    DigiKey PVG3A500C01R00 Cut Tape 1,021 1
    • 1 $1.23
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    PVG3A500C01R00 Digi-Reel 1,021 1
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    Mouser Electronics PVG3A500C01R00 1,091
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    Newark PVG3A500C01R00 Cut Tape 835 1
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    Master Electronics PVG3A500C01R00 1,000
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    3A500 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3A500 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    3A500 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    3A500 RPM Micro 3.0A Iout, 500V Vrrm General Purpose Silicon Rectifier Scan PDF

    3A500 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M


    Original     		UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: x10-16 PDF

    UT8ER

    Abstract: UT8ER512K
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead 898in UT8ER UT8ER512K PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs


    Original     		UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32, UT8ER2M32, PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    TDQ31

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 The UT8ER512K32 is a high-performance CMOS static RAM organized as 524,288 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables E1, E2 , an


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead TDQ31 PDF

    UT8ER512K32

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state


    Original     		UT8ER512K32 111MeV-cm2/mg 1x10-16 6600ns 68-lead PDF

    UT8ER512K32

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead PDF

    aeroflex sram edac

    Abstract: Aeroflex International
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead aeroflex sram edac Aeroflex International PDF

    UT8ER512K32

    Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state


    Original     		UT8ER512K32 UT8ER512K32S UT8ER512K32M aeroflex sram edac PDF

    IN2071

    Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
    Text: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200


    OCR Scan     		tllb040 CER67 CER68 CER69 1N2069 CER70 1N2070 CER500 N2071 CER72 IN2071 1N5171 CER68 3c400 3001C 1N4089 CER67 PDF

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29 PDF

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Text: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


    Original     		512Mb: M29AW 512Mb x8/x16, 100ns 110ns 512-word 128KB/64 09005aef8462ccad/ZIP 09005aef8462cca4 JS28F512M29 M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A PDF

    SRAM edac

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet March, 2006 INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead SRAM edac PDF

    zo 107

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M


    Original     		UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: 111MeV-cm2/mg zo 107 PDF

    UT8ER2M32

    Abstract: UT8ER4M32 UT8ER1M32 SRAM edac
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 2, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M


    Original     		UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: 111MeV-cm2/mg SRAM edac PDF

    UT8ER512K32

    Abstract: SRAM edac RAM EDAC SEU Dose
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet March 4, 2008 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


    Original     		UT8ER512K32 100MeV-cm2/mg 01x10-16 156KHz 68-lead SRAM edac RAM EDAC SEU Dose PDF

    UT8ER512K32

    Abstract: UT8ER512K SRAM edac RAM EDAC SEU OP167
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state


    Original     		UT8ER512K32 111MeV-cm2/mg 0x10-16 6600ns 68-lead UT8ER512K SRAM edac RAM EDAC SEU OP167 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, 100ns 512-word 48MB/s) Kbytes/64 PDF