sp8t rf switch
Abstract: HMC241 HMC241QS16 HMC182S14 mesfet lnb HMC165S14 HMC252QS24 HMC253QS24 PLCC28 QSOP16
Text: MICROWAVE CORPORATION POSITIVE BIAS MULTI-THROW SWITCHES w/INTEGRATED DECODERS FEBRUARY 2001 POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to
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Abstract: GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET
Text: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1800: Dec 04, 2002 Smart IC Maintains Uniform Bias Current For GaAs MESFETs A current sensor that monitors the drain-source current IDS at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gateturn-on threshold voltage variations for gallium-arsenide metal-semiconductor fieldeffect transistors, GaAs MESFETs.
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MAX4473:
com/an1800
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GaAs MESFET amplifier
MESFET Application
MAX4473
GaAs MesFET Application note
MESFET
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3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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SP8T switch package ghz
Abstract: HMC241
Text: COVER FEATURE POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to communicate with family, friends and coworkers via the Internet; microwaves via satellites
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HMC253QS24
SP8T switch package ghz
HMC241
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HMC637
Abstract: No abstract text available
Text: HMC637 v03.0709 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637 is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm
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HMC637
HMC637
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Untitled
Abstract: No abstract text available
Text: HMC637 v03.0709 Amplifiers - lineAr & power - Chip 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The hmC637 is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 14 dB • microwave radio & VsAT output ip3: +41 dBm
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HMC637
HMC637
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Untitled
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
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HMC637LP5E
Abstract: HMC637LP5 GaAs MESFET amplifier with high input impedance
Text: HMC637LP5 / 637LP5E v02.0709 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5
637LP5E
25mm2
HMC637LP5E
GaAs MESFET amplifier with high input impedance
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MESFET Application
Abstract: No abstract text available
Text: HMC637 v03.0709 Amplifiers - Linear & Power - Chip 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637 is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm
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HMC637
HMC637
400mA
MESFET Application
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
MESFET Application
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB
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HMC637LP5
637LP5E
25mm2
MESFET Application
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Untitled
Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB
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HMC637LP5
637LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT
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SPA1118Z
850MHz
SPA1118Z
DS111217
ECB-101161
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an 214 amp schematic diagram
Abstract: ROHM MCR03 ECB-101161
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
an 214 amp schematic diagram
ROHM MCR03
ECB-101161
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T flip flop IC
Abstract: KGL4216 t-flip flop ic 12 V T flip flop IC
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4216 10-Gbps T-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4216
10-Gbps
KGL4216
11-GHz.
24-pin
T flip flop IC
t-flip flop ic
12 V T flip flop IC
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Untitled
Abstract: No abstract text available
Text: • ESti h b ti^ O G //////// I MA1046-1 DESCRIPTION OUTLINE DRAWING The MA1046-1 is a 1.9 GHz band power amplifier Po = +3.1W , constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal, input and Output impedances are designed to
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MA1046-1
MA1046-1
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Untitled
Abstract: No abstract text available
Text: m u MA1046-1 m OUTLINE DRAWING DESCRIPTION The M A 1046-1 is a 1.9 G H z band p o w e r amplifier Po = +3.1 W , constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and O utput im pedances are designed to
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MA1046-1
MA1046-1
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Untitled
Abstract: No abstract text available
Text: 20-24 GHz GaAs Packaged EQAIph MMIC Power Amplifier AA022P1-65 Features Not Connected • Ideal for PCN and Other Digital Radio Applications ■ Hermetic 5 Lead Package ■ Single Bias Supply Operation +6V ■ No External Components Required ■ Broad Coverage of K-Band
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AA022P1-65
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Ablebond 84-1*SR4
Abstract: No abstract text available
Text: 30-35 GHz GaAs EBAlpha MMIC Driver Amplifier AA035P3-00 Features • Broad Coverage of Ka-Band ■ 18 dB Small Signal Gain ■ P1 dB = 17 dBm at 35 GHz ■ Self-Bias Design ■ Low Power Consumption, 260 mA, 6V Typical ■ 0.25 |iim Ti/Pt/Au Gates ■ Passivated Surface
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AA035P3-00
AA035P3-00
Ablebond 84-1*SR4
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pt 11400
Abstract: kaba
Text: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band
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AA038P1-00
pt 11400
kaba
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DPDT SWITCHES
Abstract: dpdt rf switch
Text: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a
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SbM21
MA4GM400C-500
MA4GM400C
DPDT SWITCHES
dpdt rf switch
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M517
Abstract: MASW6010 54LS04 MESFET
Text: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,
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MASW6010*
MASW6010
MC10H350.
MC10H350
IN4148.
M517
54LS04
MESFET
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Untitled
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT6401FM
ITT6401FM
360mA
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Untitled
Abstract: No abstract text available
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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CF003
CF003-03
CF003
CF003-01
n745D3
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