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    BI TECHNOLOGIES 165 Search Results

    BI TECHNOLOGIES 165 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations LUC3X24 QUAD-EBT Ethernet Bi-Speed Transceiver for 10Base-T/100Base-TX/FX Features General 10 Mbits/s Transceiver • Interfaces directly with LUC3M08 and LUC3R04


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    LUC3X24 10Base-T/100Base-TX/FX LUC3M08 LUC3R04 10Base-T LUC3X24 208-Pin 0G27513 PDF

    Contextual Info: HM31-10050LF summary material content, BI Technologies Corporation Index Item Material Name 1 CORE Toroid Core 2 ADHESIVE Jet Melt NY UEW-H 3 WIRE TC-WIRE 4 BODY Holder 5 SOLDER Lead Free Solder Element Composition Ferric Oxide Zinc Oxide Nickel Oxide Cupric Oxide


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    HM31-10050LF PDF

    Contextual Info: microelectronics Preliminary Data Sheet August 1997 group Lucent Technologies Bell Labs Innovations LUC3X24 QUAD-EBT Ethernet Bi-Speed Transceiver for 10Base-T/1 OOBase-TX/FX Features General 10 Mbits/s Transceiver • Interfaces directly with LUC3M08 ■ Compatible with IE E E ' 802.3 10Base-T standard


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    LUC3X24 10Base-T/1 10Base-T LUC3M08 10Base-T/100Base-TX/FX 208-Pin PDF

    luc3x04

    Abstract: Lucent wifi DS97-102LAN
    Contextual Info: Preliminary Data Sheet August 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LUC3X24 QUAD-EBT Ethernet Bi-Speed Transceiver for 10Base-T/1 OOBase-TX/FX Features General 10 Mbits/s Transceiver • Interfaces directly with LUC3M08 and LUC3R04


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    LUC3X24 10Base-T/1 10Base-T LUC3M08 LUC3R04 DS97-293LAN DS97-102LAN) luc3x04 Lucent wifi DS97-102LAN PDF

    T7755

    Abstract: SPT7824 12bit ADC BiCMOS
    Contextual Info: 47 SPT INTEGRATED CIRCUITS TOKO SPT For the representation of *S P T , please inquire at the offices of the T O K O group. m sP T tU A M ffi r>^ * S P T tt i, CERTIFICATE IS09001 / IS09001 BIŒK» Manufactured by SPT (U.S.A. , member of TOKO Group spt * SPT; SIGNAL PROCESSING TECHNOLOGIES, INC.


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    IS09001 SPT1175 SPT7710 SPT7725 SPT7750 SPT7755 SPT7810 SPT7814 SPT7820 T7755 SPT7824 12bit ADC BiCMOS PDF

    centrifuge

    Abstract: QML38534
    Contextual Info: MODEL 165 Custom Hybrid Military Grade Microcircuit DESCRIPTION Hybrid microcircuits offer a reliable, cost effective alternative to larger and heavier circuit boards and to the costly design effort and implementation of a custom IC. Hybrids also offer the advantage of a much broader


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    QML-38534 MIL-STD-883 centrifuge QML38534 PDF

    MC14511 application note

    Abstract: mc14511 display lt 313 QW-R502-021 UTC LCD driver Gas-Discharge Display Segment Driver HTL LOGIC bcd to seven segment circuit diagram COUNTER LED bcd MC14070B
    Contextual Info: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The


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    MC14511 MC14511 QW-R502-021 MC14511 application note display lt 313 UTC LCD driver Gas-Discharge Display Segment Driver HTL LOGIC bcd to seven segment circuit diagram COUNTER LED bcd MC14070B PDF

    250w schematic diagram motor control

    Abstract: BI 7720 1A NTC 25k BI 7720 7700-2A bi 7700b E4 SMD 7700B h-bridge motor drive circuit BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD
    Contextual Info: bi441 short form 2007 dev.qxd 6/26/07 8:59 AM Page 23 23 Hybrid Microcircuits Standard Hybrid Microcircuits Power Modules Power Factor Correction Power Modules H-Bridge Model 7700B 7700-2A 7720 Output Power, Watts 1,500 to 3,000 2,000 to 4,000 500 to 3,000


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    bi441 7700B 700-2A MIL-PRF-38534 TS16949 250w schematic diagram motor control BI 7720 1A NTC 25k BI 7720 7700-2A bi 7700b E4 SMD 7700B h-bridge motor drive circuit BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD PDF

    MC14511

    Abstract: CL-80 display lt 313 UTC LCD driver
    Contextual Info: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The


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    MC14511 MC14511 QW-R502-021 CL-80 display lt 313 UTC LCD driver PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS „ DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc


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    DO-15 P6KEXXXXXL-Z15-R P6KEXXXXXG-Z15-R QW-R227-001 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS  DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc


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    DO-15 P6KEXXXXXL-Z15-R P6KEXXXXXG-Z15-R QW-R227-001 PDF

    7 segment display sm 42056

    Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
    Contextual Info: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition


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    PDF

    Contextual Info: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding Gms = 21 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability


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    VPS05605 OT-343 45GHz -j100 Nov-17-2000 PDF

    420 NPN Silicon RF Transistor

    Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
    Contextual Info: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86 PDF

    CCD230-42

    Contextual Info: CCD230-42 Back Illuminated Scientific CCD Sensor 2048 x 2048 Pixels, Four Outputs and Inverted Mode Operation INTRODUCTION This device extends e2v’s family of scientific CCD sensors. The CCD230 has been designed to provide a large image area for demanding scientific imaging applications. Backilluminated spectral response combined with low read-out


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    CCD230-42 CCD230 A1A-765138 PDF

    CCD230-42

    Abstract: ccd sensor back illuminated ccd231 common rail CCD230
    Contextual Info: CCD230-42 Back Illuminated Scientific CCD Sensor 2048 x 2048 Pixels, Four Outputs and Inverted Mode Operation INTRODUCTION This device extends e2v’s family of scientific CCD sensors. The CCD230 has been designed to provide a large image area for demanding scientific imaging applications. Backilluminated spectral response combined with low read-out


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    CCD230-42 CCD230 A1A-765138 ccd sensor back illuminated ccd231 common rail PDF

    Contextual Info: CCD230-84 Scientific CCD Sensor Back Illuminated, 4096 x 4096 Pixels, Four Outputs and Inverted Mode Operation INTRODUCTION This device extends e2v’s family of scientific CCD sensors. The CCD230 has been designed to provide a large image area for demanding scientific imaging applications. Backilluminated spectral response combined with low readout


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    CCD230-84 CCD230 A1A-764199 PDF

    196-LAD302-002

    Contextual Info: CCD230-84 Scientific CCD Sensor Back Illuminated, 4096 x 4096 Pixels, Four Outputs and Inverted Mode Operation INTRODUCTION This device extends e2v’s family of scientific CCD sensors. The CCD230 has been designed to provide a large image area for demanding scientific imaging applications. Backilluminated spectral response combined with low readout


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    CCD230-84 CCD230 A1A-764199 196-LAD302-002 PDF

    smd marking GI 20

    Abstract: Power Inductors BF 1R5
    Contextual Info: Power Inductors - Shielded SPECIFICATIONS CTCDRH2D18/LDF Series From 2.2 µH to 47 µH Not shown at actual size. ctparts.com Please specify inductance tolerance code when ordering. CTCDRH2D18/LDF-2R2_ M = ±20%, N = ±30% Part Number L Test Freq. kHz Inductance


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    CTCDRH2D18/LDF CTCDRH2D18/LDF-2R2_ CTCDRH2D18/LDF-3R3_ CTCDRH2D18/LDF-4R7_ CTCDRH2D18/LDF-6R8_ CTCDRH2D18/LDF-100_ CTCDRH2D18/LDF-150_ CTCDRH2D18/LDF-220_ CTCDRH2D18/LDF-330_ smd marking GI 20 Power Inductors BF 1R5 PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23
    Contextual Info: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


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    BFT92 VPS05161 infineon marking W1s SOT23 marking W1S sot23 PDF

    Contextual Info: BFR181 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    BFR181 VPS05161 PDF

    BFR106

    Contextual Info: BFR106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    BFR106 BFR194 VPS05161 BFR106 PDF

    Contextual Info: BFR182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    BFR182 VPS05161 PDF

    BFR193

    Contextual Info: BFR193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking


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    BFR193 VPS05161 BFR193 PDF