BG94 Search Results

Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes

Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-2S Besondere Merkmale Features • • • • • • • • • • • • • • Unmontierter Laserbarren

Q62702-P1654

Abstract: Q62702-P5503 94-2S bg94 SPL BG94 BG98
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material

Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material

bg94

Abstract: BG-94 60825-1
Contextual Info: Unmontierter Laserbarren 40 W cw . 120 W qcw Unmounted Laser Bars 40 W cw . 120 W qcw SPL BG81, SPL BG94 , SPL BS81 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes

Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-20S Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • • • • • • • •

Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm SPL BG94-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes InGa Al As/GaAs Material

ll90_3

Abstract: SPL CG81-2S MNxx circuit laser diode pulsed SPL PL90_3 High power laser diode laserdioden CG81-2S high power laser Laser-Diode 808
Contextual Info: High-Power Laser Diodes Leistungslaserdioden 175 High-Power Laser Diodes . Leistungslaserdioden . 175 Summary of Types .

Q62702-P3573

Abstract: 975nm Q62702-P5244
Contextual Info: Unmontierter Laserbarren 10 W cw . 120 W qcw Unmounted Laser Bars 10 W cw . 120 W qcw SPL Byxx Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes

808nm 1W laser diode

Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Contextual Info: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical

MNxx

Abstract: AMP 925 276 din 74 SPLLL90 P5243 SPL PL90_3 spl pl90 0 CG94 laser diode 780 nm PL90_3
Contextual Info: LEISTUNGSLASER HIGH POWER LASERS LEISTUNGSLASER HIGH-POWER LASERS SAFETY INSTRUCTIONS Products incorporating laser diodes will normally be classified as class 4 laser products according to IEC 60825-1 in a normal operation mode. Direct exposure of the human eye with laser radiation is therefore hazardous and must be strictly avoided.

SPL LL90

Abstract: SPL PL90_3 spl pl90 0 CG94 LL90 CG81-2S LL85 Q62702P3558 2F94-2S 2Y94-2S
Contextual Info: LEISTUNGSLASER HIGH POWER LASERS LEISTUNGSLASER INFORMATIONEN ZUR HIGH -POWER LASERS AUGENSICHERHEIT Die Lichtabstrahlung von modernen Hochleistungs-LEDs ist stark genug, um das menschliche Auge zu schädigen. Blicken sie deshalb zum Schutz ihrer Augen nie aus kurzer Entfernung in das Lichtbündel einer LED. Die meisten Osram LEDs sind gemäß

808nm

Abstract: 940nm BS94 Q62702-P1654 Q62702-P1719 Q62702-P1733 Q62702-P3257 Q62702-P3259 bs79
Contextual Info: Unmounted Laser Bars 20 W cw . 100 W qcw SPL Bxxx Features • Unmounted monolithic linear array • High efficiency MOVPE-grown quantum well structure • Highly reliable strained layer InGa Al As/GaAs material • Standard wavelength selection is ± 3 nm, others on

2 Wavelength Laser Diode

Abstract: spl pl90 0 laser diode driver for free space communication PULSED LASER DIODE DRIVER pulsed laser diode GaAs 905 2Y98 2Y85 laser driver free space communication Laser-Diode 808 1550 laser diode
Contextual Info: OSRAM OPTO SEMICONDUCTORS H IGH POWER LASER DIODES OSRAM I N FOCUS: OSRAM OPTO SEMICONDUCTORS HIGH POWER LASER DIODES Useage of high power semiconductor lasers is growing rapidly in the industrial and automotive markets, primarily for pumping solidstate lasers Nd:YAG at

P5243

Abstract: sicherheits Q62702-P3573
Contextual Info: Unmontierter Laserbarren 10 W cw . 120 W qcw Unmounted Laser Bars 10 W cw . 120 W qcw SPL Byxx Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes

Contextual Info: Opto Semiconductors Unmounted Laser Bars 10 W cw . 100 W qcw SPL Bxxx Preliminary Features • • • • • Unmounted monolithic linear array High-efficiency MOVPE-grown quantum-well structure Highly-reliable strained-layer lnGa AI As/GaAs material Standard wavelength selection is ± 3 nm, others on request