BFW1 Search Results

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

pin configuration BFW 11

Contextual Info: Maximum Ratings DEVICE VDS V V GSR Electrical characteristics(Ta=25°C, unless otherwise specified) PD (W) ^G SS (V) mm e ia m ^ g s <oH) (V) max VDs & 'd (nA) (V) *g s s ® (nA) max mm (A) mm (A) mm BFW 10 30 30 30 0.3 30 10 8 15 0.5 0.1 BFW11 30 30 30

Contextual Info: BFW100 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

FET BFW10

Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Contextual Info: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823

bfw10 equivalent

Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
Contextual Info: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

BFW16

Abstract: BFW16A
Contextual Info: BFW16A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI BFW16 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 150 mA VCBO 40 V VCER 40 V VCEO 25 V VEBO 3.0 V PDISS 0.7 W @ TA = 25 °C

BFW10 JFET

Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA SYMBOL BFW10
Contextual Info: MOTOROLA 6367254 SC-CXSTRS/R MOTOROLA DËjjb3b72SM DOûSbaS F> SC CXSTRS/R D 96D 8 2 6 2 5 F BFW10 BFW11 CASE 20-03, STYLE 1 TO-72 TO-2Q6A) 3 G ate M A X IM U M RATINGS Sym bol R a tin g V a lu e Drain V U n it D ra in -S o u rc e V olta g e VDS 30 Vdc

transistor bfw16a

Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
Contextual Info: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFW16A

Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 40.0 V NO. BFW16A Voltage, Collector to Emitter (VCE) 25.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 3.0 V empty empty Collector Current (IC) 0.3 A empty empty 0.05 A CASE TO-39

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

BFW 10 fet

Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.

BFW17A

Abstract: bfw17a philips semiconductor lem HA
Contextual Info: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good

bfw16a philips

Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Contextual Info: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFW17A

Abstract: bfw17a philips semiconductor
Contextual Info: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFW transistors

Abstract: transistors BFW16A BFW17A bfw 10 transistor BFW16A BFW 100 BFW 61
Contextual Info: BFW16A MULTI-EMITTER SILICON PLANAR NPN BFW CATV - M ATV AM PLIFIERS T he BFW 1 6 A and BFW 1 7 A are m u lti- e m itte r s ilico n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case, w ith e x tre m e ly good in te rm o d u la tio n p ro p e rtie s and high p ow er

BFW17A

Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and

BFW11

Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
Contextual Info: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to

BFW12

Abstract: BFW13 1Z62
Contextual Info: 711DÔEL, QDb 7 b 7 S TMD IPHIN BFW12 BFW13 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial ju nction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended fo r battery powered equipm ent

bfw11 jfet

Abstract: BFW10 bfw11 BFW10 JFET jfet bfw10
Contextual Info: This Material I ru ÜJ Dl ÜJ Copyrighted LÜ J -C □ a a ru By fcH LU D- Its □a Respective 1 TO-72 N Channel JFET Manufacturer Maximum Rating« $ DEVICE Vos V min BFW10 BFW11 VDG VGSR (A) (A) nun mm Po (W) Electrical Characteristic v « . I q v as(off) o V ds & lD

Contextual Info: PhiNp^Semiconductore^^^^^BI t>bS3 3 1 QQ32133 T21 M APX Product specification NPN 1 GHz wideband transistor BFW17A N AUER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BF 331 TRANSISTORS

Abstract: bfw10 BFW11 bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel sis 648 data 0G35772
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS S y m m e tr ic a l n -c h a n n e l s ilic o n p la n a r e p ita x ia l j u n c t io n fie ld - e ffe c t tra n s is to rs in T O - 7 2 m e ta l e n v elo p e s w it h th e s h ie ld lead c o n n e c te d to th e case. T h e tra n s is to rs are desig ned fo r b ro a d b a n d a m p lifie r s 0 t o

BFW13

Abstract: ASI10832
Contextual Info: BFW13 N-CHANNEL SILICON FET DEPLETION MODE DESCRIPTION: The ASI BFW13 is Designed for Low Noise Video Amplifier Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS ID 10 mA IG 5.0 mA VDS 30 V VDG 30 V VGS 30 V Ptot 150 mW @ TA = 110 C TJ -65 C to +200 C O O

Contextual Info: BFW1000 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

BFW16

Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A
Contextual Info: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation