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    Eaton Bussmann BFW-1-2

    BUSS FUSE WIRE .010 DIA.
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    DigiKey BFW-1-2 Bulk 1
    • 1 $402.92
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    IDEC Corporation ABFW110-Y

    22MM PUSHBUTTON YELLOW
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    DigiKey ABFW110-Y Bulk 1
    • 1 $35.63
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    Newark ABFW110-Y Bulk 1
    • 1 $29.89
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    Master Electronics ABFW110-Y
    • 1 $23.97
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    Sager ABFW110-Y 1
    • 1 $25.26
    • 10 $23.3
    • 100 $21.05
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    IDEC Corporation ABFW120-G

    22MM PUSHBUTTON GREEN
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    DigiKey ABFW120-G Bulk 1
    • 1 $44.95
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    Mouser Electronics ABFW120-G 7
    • 1 $35.35
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    Newark ABFW120-G Bulk 1
    • 1 $38.53
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    • 100 $31.72
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    RS ABFW120-G Bulk 1
    • 1 $34.54
    • 10 $31.09
    • 100 $31.09
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    Master Electronics ABFW120-G
    • 1 $30.9
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    • 100 $24.55
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    Sager ABFW120-G 1
    • 1 $32.56
    • 10 $30.05
    • 100 $27.13
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    IDEC Corporation ABFW111-R

    22MM PUSHBUTTON RED
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    DigiKey ABFW111-R Bulk 1
    • 1 $44.95
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    Newark ABFW111-R Bulk 1
    • 1 $39.97
    • 10 $34.23
    • 100 $27.96
    • 1000 $25.45
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    Master Electronics ABFW111-R
    • 1 $60.44
    • 10 $39.35
    • 100 $28.7
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    Sager ABFW111-R 1
    • 1 $32.56
    • 10 $30.05
    • 100 $27.13
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    IDEC Corporation ABFW110-G

    22MM PUSHBUTTON GREEN
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    DigiKey ABFW110-G Bulk 1
    • 1 $35.63
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    • 100 $35.63
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    Newark ABFW110-G Bulk 1
    • 1 $31
    • 10 $26.55
    • 100 $21.69
    • 1000 $19.74
    • 10000 $19.74
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    RS ABFW110-G Bulk 10 18 Weeks 1
    • 1 $25.23
    • 10 $21.45
    • 100 $17.91
    • 1000 $17.91
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    Master Electronics ABFW110-G
    • 1 $23.97
    • 10 $21.38
    • 100 $19.04
    • 1000 $18.26
    • 10000 $18.26
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    Sager ABFW110-G 1
    • 1 $25.26
    • 10 $23.3
    • 100 $21.05
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    Find more BFW1 price and stock on Findchips.com

    BFW1 Datasheets (139)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFW10 Philips Semiconductors N-channel Silicon FET Original PDF
    BFW10 Continental Device India Metal Can and Epoxy Transistors Scan PDF
    BFW10 Continental Device India N Channel JFET Scan PDF
    BFW10 Motorola VHF/UHF Amplifier(N-Channel, Depletion) Scan PDF
    BFW10 Motorola VHF-UHF Amplifier Scan PDF
    BFW10 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFW10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFW10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFW10 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFW10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFW10 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFW10 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFW10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BFW10 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BFW10 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW10 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFW10 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BFW10 Texas Instruments Discrete Devices 1978 Scan PDF
    BFW100K5 Vishay Resistor: Carbon Film: 100K: Original PDF
    ...

    BFW1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFW100 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0


    Original     		PDF BFW100 Voltage100 Current10u

    FET BFW10

    Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
    Text: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823


    Original     		PDF TP4224 2N4224 SMP5248 TMPF5248 TP5248 BFW10 SMP3823 TIS34 TMPF3823 FET BFW10 BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j

    BFW16

    Abstract: BFW16A
    Text: BFW16A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI BFW16 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 150 mA VCBO 40 V VCER 40 V VCEO 25 V VEBO 3.0 V PDISS 0.7 W @ TA = 25 °C


    Original     		PDF BFW16A BFW16 100mA BFW16A

    BFW16A

    Abstract: No abstract text available
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 40.0 V NO. BFW16A Voltage, Collector to Emitter (VCE) 25.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 3.0 V empty empty Collector Current (IC) 0.3 A empty empty 0.05 A CASE TO-39


    Original     		PDF BFW16A BFW16A

    BFW17A

    Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
    Text: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and


    Original     		PDF BFW16A BFW17A BFW17A BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11

    BFW13

    Abstract: ASI10832
    Text: BFW13 N-CHANNEL SILICON FET DEPLETION MODE DESCRIPTION: The ASI BFW13 is Designed for Low Noise Video Amplifier Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS ID 10 mA IG 5.0 mA VDS 30 V VDG 30 V VGS 30 V Ptot 150 mW @ TA = 110 C TJ -65 C to +200 C O O


    Original     		PDF BFW13 BFW13 ASI10832 ASI10832

    Untitled

    Abstract: No abstract text available
    Text: BFW1000 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0


    Original     		PDF BFW1000 Current10u

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		PDF BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48

    pin configuration BFW 11

    Abstract: No abstract text available
    Text: Maximum Ratings DEVICE VDS V V GSR Electrical characteristics(Ta=25°C, unless otherwise specified) PD (W) ^G SS (V) mm e ia m ^ g s <oH) (V) max VDs & 'd (nA) (V) *g s s ® (nA) max mm (A) mm (A) mm BFW 10 30 30 30 0.3 30 10 8 15 0.5 0.1 BFW11 30 30 30


    OCR Scan     		PDF BFW11 O--92--2 O--92--3 O--92--4 pin configuration BFW 11

    bfw10 equivalent

    Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
    Text: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential


    OCR Scan     		PDF BFW10 BFW11 bfw10 equivalent BFW10 in drain resistance transistors BFW10 bfw11 equivalent 400M C15-015

    BFW10 JFET

    Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA SYMBOL BFW10
    Text: MOTOROLA 6367254 SC-CXSTRS/R MOTOROLA DËjjb3b72SM DOûSbaS F> SC CXSTRS/R D 96D 8 2 6 2 5 F BFW10 BFW11 CASE 20-03, STYLE 1 TO-72 TO-2Q6A) 3 G ate M A X IM U M RATINGS Sym bol R a tin g V a lu e Drain V U n it D ra in -S o u rc e V olta g e VDS 30 Vdc


    OCR Scan     		PDF BFW11 2N4416 16enameled BFW10 JFET bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA SYMBOL BFW10

    transistor bfw16a

    Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
    Text: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF bbS3T31 BFW16A bb53T31 D03B131 BFW16A transistor bfw16a transistors BFW16A vk200 philips bfw16a philips bfw16a philips semiconductor ic 1014b vk200

    BFQ161

    Abstract: SOT37
    Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO


    OCR Scan     		PDF OT-323 OT-37 OT-23 BFQ161 SOT37

    BFW 10 fet

    Abstract: No abstract text available
    Text: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.


    OCR Scan     		PDF BFW12 BFW13 003S7A4 bb53T31 BFW 10 fet

    bfw16a philips

    Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
    Text: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF UEA368 BFW16A 711002b 004b0S2 UBB364 bfw16a philips BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b

    BFW17A

    Abstract: bfw17a philips semiconductor
    Text: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF bbS3T31 Q3S133 BFW17A MEA366 MEM17 BFW17A bfw17a philips semiconductor

    BFW16A

    Abstract: 16ab BFW17A
    Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily


    OCR Scan     		PDF BFW16A BFW17A 16Aand 17Aare 16ab BFW17A

    BFW transistors

    Abstract: transistors BFW16A BFW17A bfw 10 transistor BFW16A BFW 100 BFW 61
    Text: BFW16A MULTI-EMITTER SILICON PLANAR NPN BFW CATV - M ATV AM PLIFIERS T he BFW 1 6 A and BFW 1 7 A are m u lti- e m itte r s ilico n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case, w ith e x tre m e ly good in te rm o d u la tio n p ro p e rtie s and high p ow er


    OCR Scan     		PDF BFW16A BFW17A BFW transistors transistors BFW16A BFW17A bfw 10 transistor BFW 100 BFW 61

    BFW11

    Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
    Text: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to


    OCR Scan     		PDF 711002b 00b7bb4 BFW10 BFW11 8fw10 711002t. Q0b7b73 BFW10 BFW11 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08

    BFW12

    Abstract: BFW13 1Z62
    Text: 711DÔEL, QDb 7 b 7 S TMD IPHIN BFW12 BFW13 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial ju nction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended fo r battery powered equipm ent


    OCR Scan     		PDF BFW12 BFW13 BFW12: 7110a2b BFW12 BFW13 1Z62

    bfw11 jfet

    Abstract: BFW10 bfw11 BFW10 JFET jfet bfw10
    Text: This Material I ru ÜJ Dl ÜJ Copyrighted LÜ J -C □ a a ru By fcH LU D- Its □a Respective 1 TO-72 N Channel JFET Manufacturer Maximum Rating« $ DEVICE Vos V min BFW10 BFW11 VDG VGSR (A) (A) nun mm Po (W) Electrical Characteristic v « . I q v as(off) o V ds & lD


    OCR Scan     		PDF BFW10 BFW11 bfw11 jfet BFW10 JFET jfet bfw10

    Untitled

    Abstract: No abstract text available
    Text: PhiNp^Semiconductore^^^^^BI t>bS3 3 1 QQ32133 T21 M APX Product specification NPN 1 GHz wideband transistor BFW17A N AUER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF QQ32133 BFW17A MEA33S

    BF 331 TRANSISTORS

    Abstract: bfw10 BFW11 bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel sis 648 data 0G35772
    Text: BFW10 BFW11 N-CHANNEL SILICON FETS S y m m e tr ic a l n -c h a n n e l s ilic o n p la n a r e p ita x ia l j u n c t io n fie ld - e ffe c t tra n s is to rs in T O - 7 2 m e ta l e n v elo p e s w it h th e s h ie ld lead c o n n e c te d to th e case. T h e tra n s is to rs are desig ned fo r b ro a d b a n d a m p lifie r s 0 t o


    OCR Scan     		PDF BFW10 BFW11 BFW10 BF 331 TRANSISTORS BFW11 bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel sis 648 data 0G35772

    BFW16

    Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A
    Text: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation


    OCR Scan     		PDF BFW16A BFW17 BFW16A-BFW17A BFW16 -BFW17A T-31-23 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A