bfw 106 c
Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for
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fi235bQ5
Q0047ES
Q62702-F319
23SbOS
00Q4727
BFW16
bfw 106 c
Q62702-F319
transistor BFW 10
bfw16a
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TRANSISTOR b 772 p
Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for
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fi235bQS
Q62702-F319
C--12
23SbQS
Q0QM727
BFW16A
TRANSISTOR b 772 p
bfw 16 transistor
BFW 72
TRANSISTOR BFW 16
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BFW16A
Abstract: TRANSISTOR BFW 16 Q62702-F319
Contextual Info: N P IS I-S iliz iu m -P la n a r-H F -T ra n sisto r BFW 16A BFW 16 A ist ein epitaktischer NPN-Silizium -Planar-HF-Transistor im Gehäuse 5 C3 DIN 41873 T O -39 für allgemeine Verwendung bis in den GHz-Bereich z. B. für Treiber- und Endstufen von Kanal- und Bereichsantennenverstärkern bis Bereich V, sowie für Vertikalverstärker-Endstufen in Breitband-Oszillografen. Der Kollektor ist mit dem Gehäuse leitend
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Q62702-F319
BFW16A
TRANSISTOR BFW 16
Q62702-F319
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BFW16A
Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V
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UTILI18
BFW16A
BFW16A
bfw16
transistor bfw16a
BFW 16
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BFW16
Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Contextual Info: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of
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BFW16
Q62702-F319
TRANSISTOR BFW 16
bfw 10 transistor
BFW16A
application of transistor BFW 10
TRANSISTOR BFW 11
Q62702-F319
transistor bfw16a
t 326 Transistor
bfw 16 transistor
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GL+7837
Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation
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BFW16A
BFW17A
T-31-23
GL+7837
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BFW17A
Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and
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BFW16A
BFW17A
BFW17A
BFW transistors
BFW 100
BFW16A
transistors BFW16A
bfw16a-bfw17a
bfw1
bfw 11
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bss17
Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN
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BFR10
BFR36
BFR96*
97/2N
98/TO-39
BFX97A
15/2N
16/2N
17/2N
18/2N
bss17
BFY 99
Transistor BFR 30
BFR 30 transistor
BFR 450
BFY 93
bfx 63
bfw 96
Transistor BFR 96
BFX97
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Transistor BFR 96
Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP
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BFR10
BFR36
BFR96*
97/2N
Transistor BFR 96
BFR 30 transistor
Transistor BFR 35
BFT95
bfx19
bsx30
BFR 80
BFW17A
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BFW16A
Abstract: 16ab BFW17A
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily
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BFW16A
BFW17A
16Aand
17Aare
16ab
BFW17A
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BFR 450
Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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BFR10
BFR36
BFR96*
97/2N
98/BFX
BFX18
BFR 450
BFW64
tpl 550
BFW17A
BFR38
BFW63
BFX19
BFT95H
BFR96
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BFR 450
Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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BFR10
BFR36
BFR96*
97/2N
BFR16
BFX31
BFX37
BFW43
BFW44
BFX90
BFR 450
BFY 93
bft95
BFw 94
BFR96
BFT95H
BFW16A
BFW17A
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TRANSISTOR BFW 11
Abstract: BFW93 C11B
Contextual Info: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)
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CB-146
BFW93
n430n
TRANSISTOR BFW 11
BFW93
C11B
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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BLY78
Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V
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BLW12
O-117
T0-60CE
S0-104
SO-104
BLY78
BLY87
bly91
BLY93A
TRANSISTOR BFW 11
Transistor BFX 90
BLY34
BLW12
BLY91A
BLY53
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BLY93
Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V
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BLW14
O-129
O-117
T0-60CE
S0-104
SO-104
BLY93
bly89
BLY78
bly91
BLX65
bly93a
BFY 94 transistor
bly 78
BLW11
BLY88
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BLW24
Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V
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BLW24
O-1175
O-117
T0-60CE
S0-104
SO-104
BLW24
BLY38
BLY88
bly91
BLY-38
BLX66
bly power transistor
TRANSISTOR BFW 16
BLY36
Transistor BFw 92
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BLY93A
Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V
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BLW23
8/32-UNC-2A-Thread
O-117
O-117
T0-60CE
S0-104
SO-104
BLY93A
BLY78
BLY34
BLY97A
BLY-38
BLW11
BLY91
BLW25
BLW19
bly 63
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transistor BD 540
Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches
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609yea
BCW94
O-92F
BCW96
BCW95
BCW97
BCW94
transistor BD 540
Transistor BFT 99
Transistor BFR 39
BFW 10 fet
Transistor BFR 80
Transistor BFT 10
transistor BFT 41
371b
Transistor BFT 42
TRANSISTOR bd 108
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blw 30 or bfw 30
Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V
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O-117
O-117
T0-60CE
S0-104
SO-104
blw 30 or bfw 30
TRANSISTOR BFW 11
BLY83
BLY78
bly91
BLY-38
BLW11
blw 93
BLY76
BLY53
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bly 2 10
Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Contextual Info: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz
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BFY90
O-117
T0-60CE
S0-104
SO-104
bly 2 10
BLW11
blx66
BFY90
uhf vhf amplifier
bly62
transistor zg
BLY53A
BLY78
BFy 90 transistor
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BLW16
Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V
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BLW16
O-117
T0-60CE
S0-104
SO-104
BLW16
BLW25
S0104
BLY78
BLY85
Transistor BFX 59
BFW 100 transistor
bly93a
BLY-38
BLW11
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BF272
Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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BF272
BF1300
CB-146
ampli lineaire
AMPLI LINEAIRE FM
Transistor BFR 96
if amplifier
BF167
cb amplifier
BF509
L 146 CB
BF199
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2N5109 motorola
Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro
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17A-01
05A-01
MRF536*
MRF2369
MRF571
44A-01,
2N5947
MRF511
2N6603
MRF962
2N5109 motorola
MRF536
BFR90 application
MRF931
MRF586
244A-01
MRF961
mrf517
2N5943
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