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    BFT 65 Price and Stock

    Nisshinbo Micro Devices NJU7665BF-TE1

    Switching Voltage Regulators Inverter Small
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    Mouser Electronics NJU7665BF-TE1
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    Knowles Corporation 0805J0165P60BFT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16 VDC 5.6 pF - 55 C+ 125 C 0.1 pF C0G (NP0)
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    Knowles Corporation 0805Y0165P60BFT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16 VDC 5.6 pF - 55 C+ 125 C 0.1 pF C0G (NP0)
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    Mouser Electronics 0805Y0165P60BFT
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    Knowles Corporation 0603J0165P60BFT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16 VDC 5.6 pF - 55 C+ 125 C 0.1 pF C0G (NP0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0603J0165P60BFT
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    Knowles Corporation 0603Y0165P60BFT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16 VDC 5.6 pF 0.1 pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0603Y0165P60BFT
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    BFT 65 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFT65 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFT65 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT65 Siemens NPN Silicon RF Transistor Scan PDF
    BFT65 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF

    BFT 65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFT65

    Abstract: transistor bft65 f451 61 SIEMENS 25813
    Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration


    OCR Scan     		BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813 PDF

    zo 103 ma

    Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
    Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­


    OCR Scan     		Q62702-F456 Q62702-F457 103MHz 102mA zo 103 ma BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514280BJ / BZ / BFT / BTR - 70 TC514280BJ / BZ / BFT / BTR - 80 TC514280BJ / BZ / BFT / BTR - 1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 WORD x 18 BIT DYNAMIC RAM DESCRIPTION


    OCR Scan     		TC514280BJ TC514280BJ/BZ/BFT/BTR TC514280B PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514260BJ / BZ/ BFT/ BTR - 70 TC514260BJ / BZ / BFT / BTR - 80 TC514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION


    OCR Scan     		TC514260BJ TC514260BJ/BZ/BFT/BTR TC514260BJâ PDF

    Transistor BFT 10

    Abstract: transistor 3Ft bux c 651 emetteur 3ft73
    Text: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature


    OCR Scan     		74sont Transistor BFT 10 transistor 3Ft bux c 651 emetteur 3ft73 PDF

    A3TE

    Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
    Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		TC514260BJ/BFT-70/80 TC514260BJ/BFT TC514273BJ BEFORETE55 A3TE TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 PDF

    BFT66

    Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
    Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband


    OCR Scan     		23SbQS Q62702-F456 Q62702-F457 BFT66, BFT67 103MHz fi535b05 DQ0H715 BFT66 BFT67 BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 Q62702-F457 QQQM710 PDF

    TC514260B

    Abstract: tc514273 TC514260BJ
    Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		TC514260BJ/BFT-70/80 TC514260BJ/BFT TC514273BJ TC514260BJ/BFT-70/ TC514260B tc514273 TC514260BJ PDF

    tc4051

    Abstract: TC4052BP TC4053BP TC4051BP TC4051BTC4052BTC4053B TC4053B TC4051BF TC4051BFT TC4052BF TC4052BFT
    Text: TC4051,52,53BP/BF/BFT 東芝CMOSデジタル集積回路 シリコン モノリシック TC4051BP,TC4051BF,TC4051BFT TC4052BP,TC4052BF,TC4052BFT TC4053BP,TC4053BF,TC4053BFT TC4051BP/BF/BFT Single 8-Channel Multiplexer/Demultiplexer TC4052BP/BF/BFT Differential 4- Channel


    Original     		TC4051 53BP/BF/BFT TC4051BP TC4051BF TC4051BFT TC4052BP TC4052BF TC4052BFT TC4053BP TC4053BF TC4051BTC4052BTC4053B TC4053B TC4051BFT TC4052BFT PDF

    ft66

    Abstract: BFT66
    Text: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband


    OCR Scan     		fl23Sb aa35b05 0QQH715 ft66 BFT66 PDF

    TC51V16325B

    Abstract: MJ-13
    Text: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		TC51V16325BJ/BFT-70 TC51V16325BJ/BFT TC51V16325BJ/ 400mil) I/024 I/025 I/032 TC51V16325B MJ-13 PDF

    TC5118325B

    Abstract: mx c511 tc5118325
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) J/BFT-70 DR16220995 TC5118325B mx c511 tc5118325 PDF

    TC5118160B

    Abstract: No abstract text available
    Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT


    OCR Scan     		TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT 0D2fi367 TC5118160B PDF

    T0141

    Abstract: TC514260BJ
    Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514260BJ/BZ/BFT-7 0,-80 TENTATIVE DATA 262,144 W O RD x 16 BIT DYNAM IC RAM DESCRIPTION The TC514260BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 16 bits. The TC514260BJ/BZ/BFT utilizes TOSHIBA'S CMOS Silicon, gate process technology as well as


    OCR Scan     		TC514260BJ/BZ/BFT-7 TC514260BJ/BZ/BFT TC514260BJ/BZ/BFT-70, -I/016 T0141 TC514260BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro­


    OCR Scan     		724fl TC51V16325BJ/BFT-70 TC51V16325BJ/BFT 16325B 400mil) PDF

    tc5118180bj

    Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
    Text: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		TC5118180BJ/BFT-60/70 18180BJ/BFT 5118180BJ/BFT B-155 tc5118180bj tc5118180 equivalent of BFT 51 8180b TC5118180B PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


    OCR Scan     		TC5118320B J/BFT-60/70 TC5118320BJ/BFT 400mil) DR16210994 D027714 TC5118320BJ/BFT-60/70 PDF

    TC5118160

    Abstract: TC5118160B
    Text: TOSHIBA TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT B-127 TC5118160 TC5118160B PDF

    Untitled

    Abstract: No abstract text available
    Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


    OCR Scan     		TC51V18325BJ/BFT-60/70 TheTC51V18325BJ/BFT TC51V18325BJ/BFT 400mii) 400mil) tem01 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		TC5118325BJ/BFT-70 18325BJ/BFT 5118325B 400mil) I/032 PDF

    I03c

    Abstract: SOJ44-P-400-1 TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		TC55V1664BJ/BFT-8 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 I03c SOJ44-P-400-1 TC55V1664BFT PDF

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Text: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


    Original     		VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 PDF

    SOJ44-P-400-1

    Abstract: TC55V1664BFT SOJ44-P-4QO-1 i2124
    Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		TC55V1664BJ/BFT-8 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT i2124 PDF