BFS 65
Abstract: BFS18R Q62702-F348 Q62702-F349 Q62702-F587 Q62702-F588
Text: ESC D • ß23SbG5 ÜQOMbTB 3 BISIE6 N PN Silicon RF Transistors BFS 18 BFS 18 R BFS 19 BFS 19 R j | BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 2 3 6 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits
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623Sb05
Q62702-F348
Q62702-F349
Q62702-F587
Q62702-F588
BFS 65
BFS18R
Q62702-F348
Q62702-F349
Q62702-F587
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F587
Abstract: TI 740
Text: SSC D • ß 2 3 S b G 5 ÜQOMbTB 3 H S I E 6 . NPN Silicon RF Transistors BFS 18 BFS 18 R SIEMENS AKTIENGESELLSCHAF 0 ~ T ^ 3 I- '0 -BFS 19 BFS 19 R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits
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62702-F30
F587
TI 740
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BFS20R
Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed
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a23Sb05
Q62702-F350
Q62702-F589
BFS20R
IC mark A09
BFS 65
Q62702-F350
Q62702-F589
a10 transistor
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TRANSISTORE
Abstract: BFS18 BFS19 Q62702 Q62702-F349
Text: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender
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BFS18
BFS18
OT-23)
Q62702â
Q62702-F349
0AH03
BFS19
TRANSISTORE
BFS19
Q62702
Q62702-F349
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BFS17A
Abstract: BFS17AR marking E2
Text: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain
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BFS17A
BFS17AR
D-74025
marking E2
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1607B
Abstract: B69640 B696 BFS 65 B412 BBY51 U2730B-BFS U2730B-BFSG1 dab Receiver b69640g
Text: U2730B-BFS L-Band Down-Converter for DAB Receivers Description The U2730B-BFS is a monolithic integrated L-band down-converter circuit fabricated in Atmel Wireless & Microcontrollers’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB
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U2730B-BFS
U2730B-BFS
D-74025
12-Oct-00
1607B
B69640
B696
BFS 65
B412
BBY51
U2730B-BFSG1
dab Receiver
b69640g
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transistor marking MCs
Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter
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Q62702-F1645
OT-323
Nov-28-1996
transistor marking MCs
SOT 23 CODE MCS
NPN marking MCs
marking MCs sot-323
Q62702-F1645
bfs 11
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BFS17
Abstract: transistor BFs 18 BFS17R marking E1
Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BFS17
BFS17R
D-74025
transistor BFs 18
marking E1
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor
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Q62702-F1645
OT-323
D1521L5
fl235LD5
A235b05
01521b?
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VSO05561
Abstract: No abstract text available
Text: BFS 17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage
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VSO05561
OT-323
Oct-12-1999
VSO05561
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Untitled
Abstract: No abstract text available
Text: BFS 17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage
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VPS05161
OT-23
Oct-12-1999
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SOT 23 CODE MCS
Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Text: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor
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Q62702-F940
OT-23
Aug-02-1996
500MHz
SOT 23 CODE MCS
transistor marking MCs
Q62702-F940
bfs 11
SOT 23 marking MCS
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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IEC 320 power inlet with fuse
Abstract: 64-XXX-020-5-12 250VAC 0.1uF 120
Text: Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65-BFS Series Features Fused Filtered Power Entry Modules • ■ ■ ■ ■ ■ ■ Tested and found to be IAW VDE 0565 Part 3. North American and Metric fuse holders available
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64-65-BFF/64-65-BFS
IEC 320 power inlet with fuse
64-XXX-020-5-12
250VAC 0.1uF 120
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sot-23 MARKING CODE G1
Abstract: bfs 11
Text: BFS 20 High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1
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OT-23
O-236)
UL94V-0
sot-23 MARKING CODE G1
bfs 11
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bfs19
Abstract: bfs 11
Text: BFS 19 High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1
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OT-23
O-236)
UL94V-0
bfs19
bfs 11
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Untitled
Abstract: No abstract text available
Text: 98-286 for datasheet10.pdf 7/24/98 9:03 AM Page 1 Black neg. PMS 301 neg. Fused Filtered Power Entry Modules For General Purpose Applications 64-65-BFF/64-65 BFS Series Features • ■ ■ ■ ■ ■ ■ ■ North American and Metric fuse holders available
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datasheet10
64-65-BFF/64-65
64/65-BFF
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BFS480
Abstract: Q62702-F1531 GG24
Text: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package
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900MHz
OT-363
Q62702-F1531
Dec-16-1996
BFS480
Q62702-F1531
GG24
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482 transistor
Abstract: Q62702-F1573 GMA marking
Text: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-363
Q62702-F1573
Dec-16-1996
482 transistor
Q62702-F1573
GMA marking
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PDF
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BFS480
Abstract: No abstract text available
Text: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package
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900MHz
OT-363
Q62702-F1531
BFS480
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Untitled
Abstract: No abstract text available
Text: Cree P4 LED CP41B-BFS/GFS Data Sheet This revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions. This is possible through the efficient optical package design and high
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CP41B-BFS/GFS
CLD-CT868
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Q62702-F1574
Abstract: GMA marking
Text: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-363
Q62702-F1574
p15mA
Dec-16-1996
Q62702-F1574
GMA marking
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transistor bc 7-40
Abstract: sot marking code G4 sot-23 MARKING CODE GS 5 silicon npn planar rf transistor sot 143 marking t12 sot-23 marking code 721 telefunken bfs20 telefunken transistor transistor bc 237 npn DQDS311
Text: TELEFUNKEN ELECTRONIC aie D a^EQDSb DQDS311 *1 W È M G G Marked with: NA TTHtLitFiyJKlKilKl electronic Marked with: G4 Creative Tèchnotogies BFS20 BFS 20 R Silicon NPN Epitaxial Planar RF Transistor Applications: General in RF range In thick and thin film circuits
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DQDS311
BFS20
569-GS
transistor bc 7-40
sot marking code G4
sot-23 MARKING CODE GS 5
silicon npn planar rf transistor sot 143
marking t12 sot-23
marking code 721
telefunken bfs20
telefunken transistor
transistor bc 237 npn
DQDS311
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