BF241 TRANSISTOR Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified

BF241 TRANSISTOR

Abstract: bf241 Bf240 BF241 npn
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified

BF241

Abstract: BF240 BF241 npn BF241 TO92 3V02 BF240 BF241
Contextual Info: BF240, BF241 NPN Silicon Epitaxial Planar Transistors designed for emitter-grounded AM and FM amplifier stages 2,5 m a x .Q S # 1,25 Plastic case ~ JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Absolute Maximum Ratings

BFT98

Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Contextual Info: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74

bf241

Abstract: BF241 npn BF240 BF241 TRANSISTOR bF240 transistor
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

Contextual Info: N AflER PHILIPS/DISCRETE b^E D 0057b72 T34 • APX BF240 BF241 b b S B 'I B l Jl HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM/FM receivers. QUICK REFERENCE DATA Collector-base voltage open emitter

bf241

Abstract: BF240 BF241 TO92 cbf240 BF240 philips
Contextual Info: N AUER PHILIPS/DISCRETE b^E D • ^53^31 □ □S 7ti72 Jl =134 ■ I APX BF240 BF241 HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM /FM receivers. QUICK REFERENCE DATA Col lector-base voltage {open emitter

BF241

Abstract: BF240 G21e 8F240 BF241 TO92 g11e CE040
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | L3ti7E54 Q D ñ S T n 5 | - T - 3 I - W BF240 BF241 C A SE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M R A T IN G S Sym bol V alue U nit Collector-Emitter Voltage VC E O 40 Vdc

bf241

Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
Contextual Info: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA

BF241C

Abstract: BF241 BF240
Contextual Info: BF240 BF241 HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic package, recom m ended fo r AM m ixers and IF a m p lifiers n A M /F M receivers. Q U IC K R EFE R E N C E D A T A Collector-base voltage open e m itte r v CB0 max. 40 V C o lle c to r-e m itte r voltage (open base)

transistor SD335

Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen

transistor bf 760

Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration

BF198

Abstract: BF238 BF224 BF194 bf195
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) Maximum Ratings Type No. BCX58-7 V CBO ^CEO ^ EBO (V) Mm (V) Min (V) Min 32 32 7 I.Po (W) (A) @Tc=25‘’c 0.45 'cB O ^C B (|JA) @{V) Max BCX5B-9 32 32

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

BF311

Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max

BF311

Abstract: BF374 BF494 bf199 BF199 BF253
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

BF311

Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350

BF199

Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C BO ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^C E (PA) 8(V) (|iA) @ (V)

bc327 smd

Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
Contextual Info: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A

Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP

TRANSISTOR BF495

Abstract: BF241 TRANSISTOR transistor BF494 BF196 BF199 transistor Bf196 BCX58-9 BCX59-10 BCX59-8 BCX59-9
Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C B0 ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^CE (PA) 8(V ) (|iA) @ (V)

BF195

Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Contextual Info: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn